MAGICAL SIGNED
CMOS/magnetoelectronic Integrated Circuits wil Multifunctional Capabilities
Total Cost €
0EC-Contrib. €
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0MAGICAL project word cloud
Explore the words cloud of the MAGICAL project. It provides you a very rough idea of what is the project "MAGICAL" about.
Project "MAGICAL" data sheet
The following table provides information about the project.
| Coordinator |
COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Organization address contact info |
| Coordinator Country | France [FR] |
| Total cost | 2˙500˙000 € |
| EC max contribution | 2˙500˙000 € (100%) |
| Programme |
1. H2020-EU.1.1. (EXCELLENT SCIENCE - European Research Council (ERC)) |
| Code Call | ERC-2014-ADG |
| Funding Scheme | ERC-ADG |
| Starting year | 2015 |
| Duration (year-month-day) | from 2015-11-01 to 2020-10-31 |
Partnership
Take a look of project's partnership.
| # | ||||
|---|---|---|---|---|
| 1 | COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES | FR (PARIS 15) | coordinator | 2˙500˙000.00 |
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Project objective
Spin Transfer Torque Magnetic memories (STT-MRAM) are receiving a growing R&D effort within the microelectronic industry aiming at the replacement of DRAM or SRAM at sub-20nm nodes. MAGICAL seeks to significantly innovate through groundbreaking advances in ultra-low power multifunctional systems based on hybrid CMOS/magnetic technology. With the development of portable electronics and of the Internet of Things (IOT), more and more functions must be embedded on chips: logic/memory, sensing, communication, etc. The current hurdles with today's technology are power consumption, communication bandwidth, processing/ packaging costs. MAGICAL will demonstrate that these limitations can be largely overcome through hybrid CMOS/magnetic technology. The project will follow three main goals: - Firstly, we will strengthen the STT-MRAM technology by investigating two novel ideas aiming at solving two remaining difficulties in sub-20nm STT-MRAM development: the nanostructuration of magnetic tunnel junctions and the long-term data retention. This will open the path to high density (>Gbit) STT-MRAM. -Secondly, we will demonstrate that Digital, analog (3D magnetic field sensing for orientation sensor), RF communication functions can be realized with the same baseline technology as the one developed for STT-MRAM. As a result, these three types of functions can be homogeneously integrated in a single chip, a major improvement compared to conventional heterogeneous integration. The prime benefits expected from MAGICAL are: ultralow power thanks to MRAM non volatility and on-chip computation capability, greatly improved communication functionalities (cloud as well as intrachip communication), reduced process/packaging costs. -Thirdly, through various actions, MAGICAL will aim at narrowing the cultural gap that still exists between magnetism and microelectronics communities. The project could definitely help the European microelectronic systems industry improve its leadership position.
Publications
| year | authors and title | journal | last update |
|---|---|---|---|
| 2019 |
Daniele Gastaldo, Nikita Strelkov, Liliana D. Buda-Prejbeanu, Bernard Dieny, Olivier Boulle, Paolo Allia, Paola Tiberto Impact of Dzyaloshinskii-Moriya interactions on the thermal stability factor of heavy metal/magnetic metal/oxide based nano-pillars published pages: 103905, ISSN: 0021-8979, DOI: 10.1063/1.5109484 |
Journal of Applied Physics 126/10 | 2020-03-11 |
| 2018 |
F. Ibrahim, A. Hallal, B. Dieny, M. Chshiev Establishing characteristic behavior of voltage control of magnetic anisotropy by ionic migration published pages: , ISSN: 2469-9950, DOI: 10.1103/PhysRevB.98.214441 |
Physical Review B 98/21 | 2020-03-11 |
| 2019 |
Jyotirmoy Chatterjee, Eric Gautier, Marc Veillerot, Ricardo C. Sousa, Stéphane Auffret, Bernard Dieny Physicochemical origin of improvement of magnetic and transport properties of STT-MRAM cells using tungsten on FeCoB storage layer published pages: 92407, ISSN: 0003-6951, DOI: 10.1063/1.5081912 |
Applied Physics Letters 114/9 | 2020-03-11 |
| 2017 |
B. Dieny, M. Chshiev Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications published pages: , ISSN: 0034-6861, DOI: 10.1103/RevModPhys.89.025008 |
Reviews of Modern Physics 89/2 | 2020-03-11 |
| 2016 |
Christophe Layer, Virgile Javerliac, Fabrice Bernard-Granger, Loic Decloedt, Laurent Becker, Kotb Jabeur, Sylvain Claireux, Bernard Dieny, Guillaume Prenat, Gregory Di Pendina, Stephane Gros, Pierre Paoli Reducing System Power Consumption Using Check-Pointing on Nonvolatile Embedded Magnetic Random Access Memories published pages: 1-24, ISSN: 1550-4832, DOI: 10.1145/2876507 |
ACM Journal on Emerging Technologies in Computing Systems 12/4 | 2019-07-04 |
| 2016 |
Hideo Ohno, Mark D. Stiles, Bernard Dieny Spintronics [Scanning the Issue] published pages: 1782-1786, ISSN: 0018-9219, DOI: 10.1109/JPROC.2016.2601163 |
Proceedings of the IEEE 104/10 | 2019-07-04 |
| 2016 |
A. A. Timopheev, R. Sousa, M. Chshiev, H. T. Nguyen, B. Dieny Second order anisotropy contribution in perpendicular magnetic tunnel junctions published pages: , ISSN: 2045-2322, DOI: 10.1038/srep26877 |
Scientific Reports 6/1 | 2019-07-04 |
| 2016 |
Léa Cuchet, Bernard Rodmacq, Stéphane Auffret, Ricardo C. Sousa, Ioan L. Prejbeanu, Bernard Dieny Perpendicular magnetic tunnel junctions with a synthetic storage or reference layer: A new route towards Pt- and Pd-free junctions published pages: , ISSN: 2045-2322, DOI: 10.1038/srep21246 |
Scientific Reports 6/1 | 2019-07-04 |
| 2016 |
C.?I.?L. de Araujo, S.?G. Alves, L.?D. Buda-Prejbeanu, B. Dieny Multilevel Thermally Assisted Magnetoresistive Random-Access Memory Based on Exchange-Biased Vortex Configurations published pages: 24015, ISSN: 2331-7019, DOI: 10.1103/PhysRevApplied.6.024015 |
Physical Review Applied 6/2 | 2019-07-04 |
| 2017 |
A. A. Timopheev, B. M. S. Teixeira, R. C. Sousa, S. Aufret, T. N. Nguyen, L. D. Buda-Prejbeanu, M. Chshiev, N. A. Sobolev, B. Dieny Inhomogeneous free layer in perpendicular magnetic tunnel junctions and its impact on the effective anisotropies and spin transfer torque switching efficiency published pages: , ISSN: 2469-9950, DOI: 10.1103/physrevb.96.014412 |
Physical Review B 96/1 | 2019-07-04 |
| 2016 |
F. Ibrahim, H. X. Yang, A. Hallal, B. Dieny, M. Chshiev Anatomy of electric field control of perpendicular magnetic anisotropy at Fe/MgO interfaces published pages: 14429, ISSN: 2469-9950, DOI: 10.1103/PhysRevB.93.014429 |
Physical Review B 93/1 | 2019-07-04 |
| 2016 |
Dmytro Apalkov, Bernard Dieny, J. M. Slaughter Magnetoresistive Random Access Memory published pages: 1796-1830, ISSN: 0018-9219, DOI: 10.1109/JPROC.2016.2590142 |
Proceedings of the IEEE 104/10 | 2019-07-04 |
| 2018 |
T Andrianov, A Vedyaev, B.Dieny Magnetic modulation of inverse spin Hall effect in lateral spin-valves published pages: 205003, ISSN: 0022-3727, DOI: |
Journal of Physics D: Applied Physics 51/20 | 2019-07-04 |
| 2017 |
A. Vedyayev, N. Ryzhanova, N. Strelkov, M. Titova, M. Chshiev, B. Rodmacq, S. Auffret, L. Cuchet, L. Nistor, B. Dieny Influence of spin-orbit interaction within the insulating barrier on the electron transport in magnetic tunnel junctions published pages: , ISSN: 2469-9950, DOI: 10.1103/PhysRevB.95.064420 |
Physical Review B 95/6 | 2019-07-04 |
| 2017 |
Jyotirmoy Chatterjee, Ricardo C. Sousa, Nicolas Perrissin, Stéphane Auffret, Clarisse Ducruet, and Bernard Dieny Enhanced annealing stability and perpendicular magnetic anisotropy in perpendicular magnetic tunnel junctions using W layer published pages: 202401, ISSN: 0003-6951, DOI: 10.1063/1.4983159 |
Applied Physics Letters 110/20 | 2019-07-04 |
| 2018 |
Cheol Seong Hwang, Bernard Dieny Advanced memory—Materials for a new era of information technology published pages: 330-333, ISSN: 0883-7694, DOI: 10.1557/mrs.2018.96 |
MRS Bulletin 43/05 | 2019-07-04 |
| 2017 |
H. Garad, F. Fettar, F. Gay, Y. Joly, S. Auffret, B. Rodmacq, B. Dieny, L. Ortega Temperature Variation of Magnetic Anisotropy in Pt / Co / AlO x Trilayers published pages: 34023, ISSN: 2331-7019, DOI: 10.1103/PhysRevApplied.7.034023 |
Physical Review Applied 7/3 | 2019-07-04 |
| 2017 |
N. Strelkov, A. Timopheev, R. C. Sousa, M. Chshiev, L. D. Buda-Prejbeanu, B. Dieny Stability phase diagram of a perpendicular magnetic tunnel junction in noncollinear geometry published pages: 184409, ISSN: 2469-9950, DOI: 10.1103/PhysRevB.95.184409 |
Physical Review B 95/18 | 2019-07-04 |
| 2018 |
B. M. S. Teixeira, A. A. Timopheev, N. F. F. Caçoilo, S. Auffret, R. C. Sousa, B. Dieny, E. Alves, N. A. Sobolev Ion irradiation-induced easy-cone anisotropy in double-MgO free layers for perpendicular magnetic tunnel junctions published pages: 202403, ISSN: 0003-6951, DOI: 10.1063/1.5026854 |
Applied Physics Letters 112/20 | 2019-07-04 |
| 2015 |
M. Chshiev, A. Manchon, A. Kalitsov, N. Ryzhanova, A. Vedyayev, N. Strelkov, W. H. Butler, B. Dieny Analytical description of ballistic spin currents and torques in magnetic tunnel junctions published pages: , ISSN: 1098-0121, DOI: 10.1103/PhysRevB.92.104422 |
Physical Review B 92/10 | 2019-07-04 |
| 2018 |
Bernard Dieny, Mair Chshiev, Brian Charles, Nikita Strelkov, Alain Truong, Olivier Fruchart, Ali Hallal, Jian Wang, Yukiko K. Takahashi, Tomohito Mizuno, Kazuhiro Hono Impact of Intergrain Spin-Transfer Torques Due to Huge Thermal Gradients in Heat-Assisted Magnetic Recording published pages: 1-11, ISSN: 0018-9464, DOI: 10.1109/tmag.2018.2863225 |
IEEE Transactions on Magnetics 54/12 | 2019-04-18 |
| 2018 |
Jyotirmoy Chatterjee, Stephane Auffret, Ricardo Sousa, Paulo Coelho, Ioan-Lucian Prejbeanu, Bernard Dieny Novel multifunctional RKKY coupling layer for ultrathin perpendicular synthetic antiferromagnet published pages: , ISSN: 2045-2322, DOI: 10.1038/s41598-018-29913-6 |
Scientific Reports 8/1 | 2019-04-18 |
| 2018 |
Nicolas Perrissin Fabert Miniaturisation extrême de mémoires STT-MRAM: couche de stockage à anisotropie de forme perpendiculaire published pages: , ISSN: , DOI: |
2019-02-22 | |
| 2018 |
A. Vedyayev, N. Ryzhanova, N. Strelkov, T. Andrianov, A. Lobachev, B. Dieny Nonlocal Signal and Noise in T -Shaped Lateral Spin-Valve Structures published pages: , ISSN: 2331-7019, DOI: 10.1103/physrevapplied.10.064047 |
Physical Review Applied 10/6 | 2019-02-22 |
| 2018 |
N. Strelkov, A. Chavent, A. Timopheev, R. C. Sousa, I. L. Prejbeanu, L. D. Buda-Prejbeanu, B. Dieny Impact of Joule heating on the stability phase diagrams of perpendicular magnetic tunnel junctions published pages: , ISSN: 2469-9950, DOI: 10.1103/physrevb.98.214410 |
Physical Review B 98/21 | 2019-02-22 |
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