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MOS-QUITO SIGNED

MOS-based Quantum Information TechnOlogy

Total Cost €

EC-Contrib. €

Partnership

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Outcomes and
results

MOS-QUITO project word cloud

Explore the words cloud of the MOS-QUITO project. It provides you a very rough idea of what is the project "MOS-QUITO" about.

operate nano inherently qubit benchmark showing distilling true primary cryo quantum cross yield layer spins limited harness governments platform simplest disruptive manufacturability readiness cmos realised electronics layers scalable fabricate demonstrating holistic spun platforms readout offers arrays explored lowest local device model made operation talk full scalability qubits builds fabrication narrowing processor tremendous silicon academia facilities frontier regarded 300mm reported technological fidelity opportunity computing foundation solid strategies impacts materials proven labs academic types driver implementations lay demonstrated industry possesses core reside advantageous

Project "MOS-QUITO" data sheet

The following table provides information about the project.

Coordinator	COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES Organization address address: RUE LEBLANC 25 city: PARIS 15 postcode: 75015 website: www.cea.fr contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.
Coordinator Country	France [FR]
Project website	http://www.mos-quito.eu/
Total cost	3˙973˙360 €
EC max contribution	3˙450˙622 € (87%)
Programme	1. H2020-EU.2.1.1. (INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT))
Code Call	H2020-ICT-2015
Funding Scheme	RIA
Starting year	2016
Duration (year-month-day)	from 2016-04-01 to 2019-09-30

Partnership

Take a look of project's partnership.

#	participants	country	role	EC contrib. [€]
1	COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES Organization address address: RUE LEBLANC 25 city: PARIS 15 postcode: 75015 website: www.cea.fr contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	FR (PARIS 15)	coordinator	1˙146˙568.00
2	KOBENHAVNS UNIVERSITET KOBENHAVNS UNIVERSITET Organization address address: NORREGADE 10 city: KOBENHAVN postcode: 1165 website: www.ku.dk contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DK (KOBENHAVN)	participant	491˙007.00
3	Teknologian tutkimuskeskus VTT Oy Teknologian tutkimuskeskus VTT Oy Organization address address: VUORIMIEHENTIE 3 city: Espoo postcode: 2150 website: www.vtt.fi contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	FI (Espoo)	participant	484˙486.00
4	UNIVERSITY COLLEGE LONDON UNIVERSITY COLLEGE LONDON Organization address address: GOWER STREET city: LONDON postcode: WC1E 6BT website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	UK (LONDON)	participant	456˙061.00
5	HITACHI EUROPE LIMITED HITACHI EUROPE LIMITED Organization address address: LOWER COOKHAM ROAD WHITEBROOK PARK city: MAIDENHEAD postcode: SL6 8YA website: www.hitachi-eu.com/index.jsp contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	UK (MAIDENHEAD)	participant	450˙000.00
6	CONSIGLIO NAZIONALE DELLE RICERCHE CONSIGLIO NAZIONALE DELLE RICERCHE Organization address address: PIAZZALE ALDO MORO 7 city: ROMA postcode: 185 website: www.cnr.it contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	IT (ROMA)	participant	422˙500.00
7	ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE Organization address address: BATIMENT CE 3316 STATION 1 city: LAUSANNE postcode: 1015 website: www.epfl.ch contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	CH (LAUSANNE)	participant	0.00

Map

Project objective

Quantum computing is now widely regarded by many in academia, governments and industry to represent a major new frontier in information technology with the potential for a disruptive impact. Many different materials and approaches have been explored, with a narrowing of focus in recent years on scalable implementations based on solid state platforms. In particular, there is now strong evidence that silicon, the primary platform technology for today’s processor technology, inherently possesses many key properties that make it advantageous for quantum computing. Two types of qubit based on spins in silicon nano-devices made in academic research labs have already been reported with demonstrated high-fidelity operation. Our project builds on this success and aims to take this technology to the next readiness level by showing that silicon-based qubits can be realised within a full CMOS platform, using the 300mm-scale fabrication facilities in our consortium. In doing so we will demonstrate the true potential of silicon based qubits in terms of scalability and manufacturability. Our focus is on distilling the silicon device design down to the simplest core element necessary to demonstrate qubit behaviour, in order to lay the foundation for a scalable technology. We will design, model and fabricate these qubit devices, and then benchmark them using key operating parameters. Our attention is not limited at the lowest level technology layer where the qubits reside, and includes higher control layers necessary to operate such devices, including demonstrating strategies for achieving local control and readout in large-scale arrays without cross-talk and developing cryo-CMOS electronics to support the qubit operation. Both of these may be spun-out and yield their own technological impacts. Thus, our holistic approach offers a wider opportunity to harness the tremendous proven capabilities of integrated CMOS technology to become a key driver of quantum technology development.

Deliverables

List of deliverables.
D4.3 Report on all- electrical two- axis coherent control of a NW-FET spin qubit	Documents, reports	2020-02-27 15:03:58
D5.3 Design of a fault tolerant logic qubit	Documents, reports	2020-02-27 15:04:03
D3.2 Report on first realization of single qubits	Documents, reports	2020-02-27 15:03:54
D7.3 Dissemination and exploitation report	Documents, reports	2020-02-27 15:04:06
D4.4 Report on coherent control of NW- FET spin qubits using globally- applied Î¼-wave field combined with local addressing via electric fields	Documents, reports	2020-02-27 15:04:02
D1.7 Final report	Documents, reports	2020-01-14 15:25:11
D7.2 Dissemination and exploitation report	Documents, reports	2019-05-31 15:13:32
D7.1 Dissemination and exploitation report	Documents, reports	2019-05-31 15:13:41
D1.3 Data management plan	Other	2019-05-31 15:19:37
D3.1 Report on tunability of split-gate devices into qubit operation	Documents, reports	2019-05-31 15:13:37
D1.1 Setting up a website	Documents, reports	2019-05-31 15:13:40
D1.2 Kick-off meeting	Documents, reports	2019-05-31 15:13:37

Take a look to the deliverables list in detail: detailed list of MOS-QUITO deliverables.

Publications

List of publications.
year	authors and title	journal	last update
2019	David J. Ibberson, Lisa A. Ibberson, Geoff Smithson, James A. Haigh, Sylvain Barraud, M. Fernando Gonzalez-Zalba Low-temperature tunable radio-frequency resonator for sensitive dispersive readout of nanoelectronic devices published pages: 123501, ISSN: 0003-6951, DOI: 10.1063/1.5082894	Applied Physics Letters 114/12	2019-11-22
2019	M. Esterli, R.M. Otxoa, M.F. Gonzalez-Zalba Small-signal equivalent circuit for double quantum dots at low-frequencies published pages: , ISSN: 0003-6951, DOI:	Applied Physics Letters	2019-11-22
2019	Zhenyu Cai, Michael A. Fogarty, Simon Schaal, Sofia Patomaki, Simon C. Benjamin, John J. L. Morton A Silicon Surface Code Architecture Resilient Against Leakage Errors published pages: , ISSN: 2331-8422, DOI:	arXiv Online Repository	2019-11-22
2019	L. Hutin, B. Bertrand, E. Chanrion, H. Bohuslavskyi, F. Ansaloni, T.-Y. Yang, J. Michniewicz, D. J. Niegemann, C. Spence, T. Lundberg, A. Chatterjee, A. Crippa, J. Li, R. Maurand, X. Jehl, M. Sanquer, M. F. Gonzalez-Zalba, F. Kuemmeth, Y.-M. Niquet, S. De Franceschi, M. Urdampilleta, T. Meunier, M. Vinet Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays published pages: , ISSN: , DOI:	IEEE International Electron Devices Meeting proceedings	2019-11-22
2019	Matias Urdampilleta, David J. Niegemann, Emmanuel Chanrion, Baptiste Jadot, Cameron Spence, Pierre-AndrÃ© Mortemousque, Christopher BÃ¤uerle, Louis Hutin, Benoit Bertrand, Sylvain Barraud, Romain Maurand, Marc Sanquer, Xavier Jehl, Silvano De Franceschi, Maud Vinet, Tristan Meunier Gate-based high fidelity spin readout in a CMOS device published pages: 737-741, ISSN: 1748-3387, DOI: 10.1038/s41565-019-0443-9	Nature Nanotechnology 14/8	2019-11-22
2019	Theodor Lundberg, Jing Li, Louis Hutin, Benoit Bertrand, David J. Ibberson, Chang-Min Lee, David J. Niegemann, Matias Urdampilleta, Nadia Stelmashenko, Tristan Meunier, Jason W. A. Robinson, Lisa Ibberson, Maud Vinet, Yann-Michel Niquet, M. Fernando Gonzalez-Zalba A Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation published pages: , ISSN: 2331-8422, DOI:	arXiv Online Repository	2019-11-22
2019	Philipp Ross, Brendon C. Rose, Cheuk C. Lo, Mike L.W. Thewalt, Alexei M. Tyryshkin, Stephen A. Lyon, John J.L. Morton Electron Spin Resonance of P Donors in Isotopically Purified Si Detected by Contactless Photoconductivity published pages: , ISSN: 2331-7019, DOI: 10.1103/physrevapplied.11.054014	Physical Review Applied 11/5	2019-11-22
2018	E Ferraro, M Fanciulli, M De Michielis Gate fidelity comparison in semiconducting spin qubit implementations affected by control noises published pages: 115022, ISSN: 2399-6528, DOI: 10.1088/2399-6528/aaf088	Journal of Physics Communications 2/11	2019-11-22
2019	Christian Volk, Anasua Chatterjee, Fabio Ansaloni, Charles M. Marcus, Ferdinand Kuemmeth Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate published pages: 5628-5633, ISSN: 1530-6984, DOI: 10.1021/acs.nanolett.9b02149	Nano Letters 19/8	2019-11-22
2019	Y. Peng, A. Ruffino, E. Charbon Analysis on Noise Requirements of RF Front-End Circuits for Spin Qubit Readout published pages: , ISSN: , DOI: 10.5075/epfl-iclab-icnf-269250	25th International Conference on Noise and Fluctuations	2019-11-22
2019	Elena Ferraro, Marco De Michielis Bandwidth-Limited and Noisy Pulse Sequences for Single Qubit Operations in Semiconductor Spin Qubits published pages: 1042, ISSN: 1099-4300, DOI: 10.3390/e21111042	Entropy 21/11	2019-11-22
2019	E. Ferraro, M. Fanciulli, M. De Michielis Phonon-induced relaxation and decoherence times of the hybrid qubit in silicon quantum dots published pages: , ISSN: 2469-9950, DOI: 10.1103/physrevb.100.035310	Physical Review B 100/3	2019-11-22
2019	Arnout Beckers, Farzan Jazaeri, Christian Enz Cryogenic MOSFET Threshold Voltage Model published pages: , ISSN: , DOI:	arXiv Online Repository	2019-11-22
2019	RubÃ©n M. Otxoa, Anasua Chatterjee, Sergey N. Shevchenko, Sylvain Barraud, Franco Nori, M. Fernando Gonzalez-Zalba A quantum interference capacitor based on double-passage Landau-Zener-StÃ¼ckelberg-Majorana interferometry published pages: , ISSN: 2469-9950, DOI:	Physical Review B	2019-11-22
2019	S. Schaal, I. Ahmed, J. A. Haigh, L. Hutin, B. Bertrand, S. Barraud, M. Vinet, C.-M. Lee, N. Stelmashenko, J. W. A. Robinson, J. Y. Qiu, S. Hacohen-Gourgy, I. Siddiqi, M. F. Gonzalez-Zalba, J. J. L. Morton Fast gate-based readout of silicon quantum dots using Josephson parametric amplification published pages: , ISSN: 2331-8422, DOI:	arXiv Online Repository	2019-11-22
2017	R. Mizuta, R. M. Otxoa, A. C. Betz, M. F. Gonzalez-Zalba Quantum and tunneling capacitance in charge and spin qubits published pages: , ISSN: 2469-9950, DOI: 10.1103/PhysRevB.95.045414	Physical Review B 95/4	2019-06-18
2018	Anasua Chatterjee, Sergey N. Shevchenko, Sylvain Barraud, RubÃ©n M. Otxoa, Franco Nori, John J. L. Morton, M. Fernando Gonzalez-Zalba A silicon-based single-electron interferometer coupled to a fermionic sea published pages: , ISSN: 2469-9950, DOI: 10.1103/physrevb.97.045405	Physical Review B 97/4	2019-06-18
2018	Arnout Beckers, Farzan Jazaeri, Christian Enz Cryogenic MOS Transistor Model published pages: 3617-3625, ISSN: 0018-9383, DOI: 10.1109/TED.2018.2854701	IEEE Transactions on Electron Devices 65/9	2019-06-18
2018	Andrea Corna, LÃ©o Bourdet, Romain Maurand, Alessandro Crippa, Dharmraj Kotekar-Patil, Heorhii Bohuslavskyi, Romain LaviÃ©ville, Louis Hutin, Sylvain Barraud, Xavier Jehl, Maud Vinet, Silvano De Franceschi, Yann-Michel Niquet, Marc Sanquer Electrically driven electron spin resonance mediated by spinâ€“valleyâ€“orbit coupling in a silicon quantum dot published pages: , ISSN: 2056-6387, DOI: 10.1038/s41534-018-0059-1	npj Quantum Information 4/1	2019-06-18
2017	E. Ferraro, M. Fanciulli, M. De Michielis Controlled-NOT gate sequences for mixed spin qubit architectures in a noisy environment published pages: , ISSN: 1570-0755, DOI: 10.1007/s11128-017-1729-1	Quantum Information Processing 16/11	2019-06-18
2018	E Ferraro, M Fanciulli, M De Michielis Gate fidelity comparison in semiconducting spin qubit implementations affected by control noises published pages: 115022, ISSN: 2399-6528, DOI: 10.1088/2399-6528/aaf088	Journal of Physics Communications 2/11	2019-06-18
2016	H. Bohuslavskyi, D. Kotekar-Patil, R. Maurand, A. Corna, S. Barraud, L. Bourdet, L. Hutin, Y.-M. Niquet, X. Jehl, S. De Franceschi, M. Vinet, M. Sanquer Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction published pages: 193101, ISSN: 0003-6951, DOI: 10.1063/1.4966946	Applied Physics Letters 109/19	2019-06-18
2017	D. Kotekar-Patil, A. Corna, R. Maurand, A. Crippa, A. Orlov, S. Barraud, L. Hutin, M. Vinet, X. Jehl, S. De Franceschi, M. Sanquer Pauli spin blockade in CMOS double quantum dot devices published pages: 1600581, ISSN: 0370-1972, DOI: 10.1002/pssb.201600581	physica status solidi (b) 254/3	2019-06-18
2017	Alessandro Crippa, Romain Maurand, Dharmraj Kotekar-Patil, Andrea Corna, Heorhii Bohuslavskyi, Alexei O. Orlov, Patrick Fay, Romain LaviÃ©ville, Sylvain Barraud, Maud Vinet, Marc Sanquer, Silvano De Franceschi, Xavier Jehl Level Spectrum and Charge Relaxation in a Silicon Double Quantum Dot Probed by Dual-Gate Reflectometry published pages: 1001-1006, ISSN: 1530-6984, DOI: 10.1021/acs.nanolett.6b04354	Nano Letters 17/2	2019-06-18
2018	Imtiaz Ahmed, James A. Haigh, Simon Schaal, Sylvain Barraud, Yi Zhu, Chang-min Lee, Mario Amado, Jason W. A. Robinson, Alessandro Rossi, John J. L. Morton, M. Fernando Gonzalez-Zalba Radio-Frequency Capacitive Gate-Based Sensing published pages: , ISSN: 2331-7019, DOI: 10.1103/PhysRevApplied.10.014018	Physical Review Applied 10/1	2019-06-18
2016	R. Maurand, X. Jehl, D. Kotekar-Patil, A. Corna, H. Bohuslavskyi, R. LaviÃ©ville, L. Hutin, S. Barraud, M. Vinet, M. Sanquer, S. De Franceschi A CMOS silicon spin qubit published pages: 13575, ISSN: 2041-1723, DOI: 10.1038/ncomms13575	Nature Communications 7	2019-06-18
2016	A. C. Betz, M. L. V. Tagliaferri, M. Vinet, M. BrostrÃ¶m, M. Sanquer, A. J. Ferguson, M. F. Gonzalez-Zalba Reconfigurable quadruple quantum dots in a silicon nanowire transistor published pages: 203108, ISSN: 0003-6951, DOI: 10.1063/1.4950976	Applied Physics Letters 108/20	2019-06-18
2017	A. Rossi, R. Zhao, A. S. Dzurak, M. F. Gonzalez-Zalba Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor published pages: 212101, ISSN: 0003-6951, DOI: 10.1063/1.4984224	Applied Physics Letters 110/21	2019-06-18
2018	Leo Bourdet, Louis Hutin, Benoit Bertrand, Andrea Corna, Heorhii Bohuslavskyi, Anthony Amisse, Alessandro Crippa, Romain Maurand, Sylvain Barraud, Matias Urdampilleta, Christopher Bauerle, Tristan Meunier, Marc Sanquer, Xavier Jehl, Silvano De Franceschi, Yann-Michel Niquet, Maud Vinet All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology published pages: 5151-5156, ISSN: 0018-9383, DOI: 10.1109/TED.2018.2870115	IEEE Transactions on Electron Devices 65/11	2019-05-23
2018	S. Schaal, S. Barraud, J.â€‰J.â€‰L. Morton, M.â€‰F. Gonzalez-Zalba Conditional Dispersive Readout of a CMOS Single-Electron Memory Cell published pages: , ISSN: 2331-7019, DOI: 10.1103/physrevapplied.9.054016	Physical Review Applied 9/5	2019-05-23
2018	J. Mansir, P. Conti, Z. Zeng, J.â€‰J. Pla, P. Bertet, M.â€‰W. Swift, C.â€‰G. Van de Walle, M.â€‰L.â€‰W. Thewalt, B. Sklenard, Y.â€‰M. Niquet, J.â€‰J.â€‰L. Morton Linear Hyperfine Tuning of Donor Spins in Silicon Using Hydrostatic Strain published pages: , ISSN: 0031-9007, DOI: 10.1103/PhysRevLett.120.167701	Physical Review Letters 120/16	2019-05-07
2018	Imtiaz Ahmed, Anasua Chatterjee, Sylvain Barraud, John J. L. Morton, James A. Haigh, M. Fernando Gonzalez-Zalba Primary thermometry of a single reservoir using cyclic electron tunneling to a quantum dot published pages: , ISSN: 2399-3650, DOI: 10.1038/s42005-018-0066-8	Communications Physics 1/1	2019-05-07
2018	S. Schaal, A. Rossi, S. Barraud, J. J. L. Morton, M. F. Gonzalez-Zalba A CMOS dynamic random access architecture for radio-frequency readout of quantum devices published pages: , ISSN: 2331-8422, DOI:	arXiv Online Repository	2019-05-07
2018	A. Crippa, R. Ezzouch, A. AprÃ¡, A. Amisse, L. Houtin, B. Bertrand, M. Vinet, M. Urdampilleta, T. Meunier, M. Sanquer, X. Jehl, R. Maurand, S. De Franceschi Gate-reflectometry dispersive readout of a spin qubit in silicon published pages: , ISSN: 2331-8422, DOI:	arXiv Online Repository	2019-05-07
2018	E. Ferraro, M. Fanciulli, M. De Michielis Semiconducting double-dot exchange-only qubit dynamics in the presence of magnetic and charge noises published pages: , ISSN: 1570-0755, DOI: 10.1007/s11128-018-1896-8	Quantum Information Processing 17/6	2019-05-07
2018	D. J. Ibberson, L. Bourdet, J. C. Abadillo-Uriel, I. Ahmed, S. Barraud, M. J. CalderÃ³n, Y.-M. Niquet, M. F. Gonzalez-Zalba Electric-field tuning of the valley splitting in silicon corner dots published pages: 53104, ISSN: 0003-6951, DOI: 10.1063/1.5040474	Applied Physics Letters 113/5	2019-05-07
2018	Benjamin Venitucci, LÃ©o Bourdet, Daniel Pouzada, Yann-Michel Niquet Electrical manipulation of semiconductor spin qubits within the g -matrix formalism published pages: , ISSN: 2469-9950, DOI: 10.1103/physrevb.98.155319	Physical Review B 98/15	2019-05-07
2018	H. Bohuslavskyi, S. Barraud, V. Barral, M. Casse, L. Le Guevel, L. Hutin, B. Bertrand, A. Crippa, X. Jehl, G. Pillonnet, A. G. M. Jansen, F. Arnaud, P. Galy, R. Maurand, S. De Franceschi, M. Sanquer, M. Vinet Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization published pages: 3682-3688, ISSN: 0018-9383, DOI: 10.1109/TED.2018.2859636	IEEE Transactions on Electron Devices 65/9	2019-05-07
2018	J.â€‰J. Pla, A. Bienfait, G. Pica, J. Mansir, F.â€‰A. Mohiyaddin, Z. Zeng, Y.â€‰M. Niquet, A. Morello, T. Schenkel, J.â€‰J.â€‰L. Morton, P. Bertet Strain-Induced Spin-Resonance Shifts in Silicon Devices published pages: , ISSN: 2331-7019, DOI: 10.1103/PhysRevApplied.9.044014	Physical Review Applied 9/4	2019-05-07
2018	Emma MykkÃ¤nen, Janne S. Lehtinen, Leif GrÃ¶nberg, Andrey Shchepetov, Andrey V. Timofeev, David Gunnarsson, Antti Kemppinen, Antti J. Manninen, Mika Prunnila Efficient thermionic operation and phonon isolation by a semiconductor-superconductor junction published pages: , ISSN: 2331-8422, DOI:	arXiv Online Repository	2019-05-07
2018	LÃ©o Bourdet, Yann-Michel Niquet All-electrical manipulation of silicon spin qubits with tunable spin-valley mixing published pages: , ISSN: 2469-9950, DOI: 10.1103/PhysRevB.97.155433	Physical Review B 97/15	2019-05-07
2018	Ferraro, E.; Fanciulli, M.; De Michielis, M. Coherence time analysis in semiconducting hybrid qubit under realistic experimental conditions published pages: , ISSN: 2511-9044, DOI:	Advanced Quantum Technologies	2019-05-07
2019	V. Mazzocchi, P.G. Sennikov, A.D. Bulanov, M.F. Churbanov, B. Bertrand, L. Hutin, J.P. Barnes, M.N. Drozdov, J.M. Hartmann, M. Sanquer 99.992% 28Si CVD-grown epilayer on 300â€¯mm substrates for large scale integration of silicon spin qubits published pages: 1-7, ISSN: 0022-0248, DOI: 10.1016/j.jcrysgro.2018.12.010	Journal of Crystal Growth 509	2019-05-07
2018	Arnout Beckers, Farzan Jazaeri, Heorhii Bohuslavskyi, Louis Hutin, Silvano De Franceschi, Christian Enz Characterization and Modeling of 28-nm FDSOI CMOS Technology down to Cryogenic Temperatures published pages: , ISSN: 2331-8422, DOI:	arXiv Online Repository	2019-05-07
2018	Alessandro Crippa, Romain Maurand, LÃ©o Bourdet, Dharmraj Kotekar-Patil, Anthony Amisse, Xavier Jehl, Marc Sanquer, Romain LaviÃ©ville, Heorhii Bohuslavskyi, Louis Hutin, Sylvain Barraud, Maud Vinet, Yann-Michel Niquet, Silvano De Franceschi Electrical Spin Driving by g -Matrix Modulation in Spin-Orbit Qubits published pages: , ISSN: 0031-9007, DOI: 10.1103/PhysRevLett.120.137702	Physical Review Letters 120/13	2019-05-07
2018	J S Lehtinen, A Kemppinen, E MykkÃ¤nen, M Prunnila, A J Manninen Superconducting MoSi nanowires published pages: 15002, ISSN: 0953-2048, DOI: 10.1088/1361-6668/aa954b	Superconductor Science and Technology 31/1	2019-05-07
2018	Arnout Beckers, Farzan Jazaeri, Christian Enz Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K published pages: 1007-1018, ISSN: 2168-6734, DOI: 10.1109/JEDS.2018.2817458	IEEE Journal of the Electron Devices Society 6	2019-05-07
2018	Abdurakhimov, L. V.; Khan, S.; Panjwani, N. A.; Breeze, J. D.; Seki, S.; Tokura, Y.; Morton, J. J. L.; Kurebayashi, H. Magnon-photon coupling in a non-collinear magnetic insulator Cu$_2$OSeO$_3$ published pages: , ISSN: 2331-8422, DOI:	arXiv Online Repository	2019-05-07
2017	Leif GrÃ¶nberg, Mikko Kiviranta, Visa Vesterinen, Janne Lehtinen, Slawomir Simbierowicz, Juho Luomahaara, Mika Prunnila, Juha Hassel Side-wall spacer passivated sub- Î¼ m Josephson junction fabrication process published pages: 125016, ISSN: 0953-2048, DOI: 10.1088/1361-6668/aa9411	Superconductor Science and Technology 30/12	2019-05-07
2018	Arnout Beckers, Farzan Jazaeri, Christian Enz Revised theoretical limit of the subthreshold swing in field-effect transistors published pages: , ISSN: 2331-8422, DOI:	arXiv Online Repository	2019-05-07

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