Explore the words cloud of the In-Need project. It provides you a very rough idea of what is the project "In-Need" about.
The following table provides information about the project.
Coordinator |
ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE
Organization address contact info |
Coordinator Country | Switzerland [CH] |
Total cost | 1˙750˙000 € |
EC max contribution | 1˙750˙000 € (100%) |
Programme |
1. H2020-EU.1.1. (EXCELLENT SCIENCE - European Research Council (ERC)) |
Code Call | ERC-2015-STG |
Funding Scheme | ERC-STG |
Starting year | 2016 |
Duration (year-month-day) | from 2016-02-01 to 2021-01-31 |
Take a look of project's partnership.
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1 | ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE | CH (LAUSANNE) | coordinator | 1˙750˙000.00 |
Energy efficiency offers a vast and low-cost resource to address future energy demand while reducing carbon dioxide emissions. The unique properties of III-Nitride semiconductors make them the ideal material for future energy challenges. Their outstanding optical properties are revolutionizing the world with efficient LED light bulbs. Even greater impact is anticipated for power electronics. The much larger Baliga’s figure of merit of GaN compared to SiC and Si enables drastically more efficient power switches, which are at the heart of any energy generation/management system. However, current III-Nitride device performance is far from the fundamental materials capabilities, and severe thermal management and reliability limitations hinder their full potential for energy-efficiency. The In-Need proposes a unique approach to address concurrently all current challenges based on advanced nanostructures designed to optimally exploit the superior properties of the new bulk GaN materials. Nanostructuring distinct regions of the device will allow a precise control over their intrinsic characteristics. To address reliability issues and yield unprecedented device performance, these nanostructures will be combined to the excellent properties of bulk GaN. This will open opportunities for new vertical devices, enabling smaller structures with larger voltages and higher efficiencies. Efficient thermal management will be achieved with ultra-near junction cooling. Nano/micro-channels filled with high thermal conductivity materials or coolants will be embedded inside the device. We believe our judicious nano-scale design of new high-performing materials will result in state-of-the-art devices, leading to a large-scale impact in energy efficiency. The miniaturization and large power density enabled by our approach will allow future integration of power devices into single power microchips. This will revolutionize energy use much like Silicon microchips did for information processing.
year | authors and title | journal | last update |
---|---|---|---|
2018 |
Riyaz Abdul Khadar, Chao Liu, Liyang Zhang, Peng Xiang, Kai Cheng, Elison Matioli 820-V GaN-on-Si Quasi-Vertical p-i-n Diodes With BFOM of 2.0 GW/cm2 published pages: 401-404, ISSN: 0741-3106, DOI: 10.1109/LED.2018.2793669 |
IEEE Electron Device Letters 39/3 | 2019-06-19 |
2017 |
Jun Ma, Elison Matioli Slanted Tri-Gates for High-Voltage GaN Power Devices published pages: 1305-1308, ISSN: 0741-3106, DOI: 10.1109/LED.2017.2731799 |
IEEE Electron Device Letters 38/9 | 2019-06-19 |
2017 |
Jun Ma, Dante Colao Zanuz, Elison Matioli Field Plate Design for Low Leakage Current in Lateral GaN Power Schottky Diodes: Role of the Pinch-off Voltage published pages: 1298-1301, ISSN: 0741-3106, DOI: 10.1109/LED.2017.2734644 |
IEEE Electron Device Letters 38/9 | 2019-06-19 |
2017 |
Jun Ma, Minghua Zhu, Elison Matioli 900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain published pages: 1704-1707, ISSN: 0741-3106, DOI: 10.1109/LED.2017.2761911 |
IEEE Electron Device Letters 38/12 | 2019-06-19 |
2017 |
Jun Ma, Elison Matioli High Performance Tri-Gate GaN Power MOSHEMTs on Silicon Substrate published pages: 367-370, ISSN: 0741-3106, DOI: 10.1109/LED.2017.2661755 |
IEEE Electron Device Letters 38/3 | 2019-06-19 |
2018 |
Chao Liu, Riyaz Abdul Khadar, Elison Matioli Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes published pages: 1034-1037, ISSN: 0741-3106, DOI: 10.1109/LED.2018.2841959 |
IEEE Electron Device Letters 39/7 | 2019-06-19 |
2018 |
Taifang Wang, Jun Ma, Elison Matioli 1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes published pages: 1038-1041, ISSN: 0741-3106, DOI: 10.1109/LED.2018.2842031 |
IEEE Electron Device Letters 39/7 | 2019-06-19 |
2018 |
Chao Liu, Riyaz Abdul Khadar, Elison Matioli GaN-on-Si Quasi-Vertical Power MOSFETs published pages: 71-74, ISSN: 0741-3106, DOI: 10.1109/LED.2017.2779445 |
IEEE Electron Device Letters 39/1 | 2019-06-19 |
2018 |
Jun Ma, Catherine Erine, Peng Xiang, Kai Cheng, Elison Matioli Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance published pages: 242102, ISSN: 0003-6951, DOI: 10.1063/1.5064407 |
Applied Physics Letters 113/24 | 2019-04-16 |
2019 |
Riyaz Mohammed Abdul Khadar, Chao Liu, Reza Soleimanzadeh, Elison Matioli Fully Vertical GaN-on-Si power MOSFETs published pages: 443-446, ISSN: 0741-3106, DOI: 10.1109/led.2019.2894177 |
IEEE Electron Device Letters 40/3 | 2019-04-16 |
2019 |
Luca Nela, Minghua Zhu, Jun Ma, Elison Matioli High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal published pages: 439-442, ISSN: 0741-3106, DOI: 10.1109/led.2019.2896359 |
IEEE Electron Device Letters 40/3 | 2019-04-16 |
2019 |
Jun Ma, Georgios Kampitsis, Peng Xiang, Kai Cheng, Elison Matioli Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance published pages: 275-278, ISSN: 0741-3106, DOI: 10.1109/led.2018.2887199 |
IEEE Electron Device Letters 40/2 | 2019-04-16 |
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The information about "IN-NEED" are provided by the European Opendata Portal: CORDIS opendata.
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