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NanoFab2D SIGNED

Novel 2D quantum device concepts enabled by sub-nanometre precision nanofabrication

Total Cost €

EC-Contrib. €

Partnership

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Outcomes and
results

NanoFab2D project word cloud

Explore the words cloud of the NanoFab2D project. It provides you a very rough idea of what is the project "NanoFab2D" about.

stm effect chip device electrical disruptively iin principles semiconducting spin configurations experimentally technologies structure graphene silicon platform unmatched combining electronics transition nanostructures technique speed single interplay electronic semiconductor functional degrees data orientation metallic freedom mechanism opening atomic magnetism lay performed confinement full nanostructure foundations relies storage overcome precision switching volatile networks mechanisms magnetic fundamental transistors edge ultra engineering realized independent ferromagnetic quantum circuits limitations engineered edges nanofabrication operation integrating versatility feasibility metals material

Project "NanoFab2D" data sheet

The following table provides information about the project.

Coordinator	ENERGIATUDOMANYI KUTATOKOZPONT Organization address address: KONKOLY THEGE MIKLOS UT 29-33 city: Budapest postcode: 1121 website: http://www.energia.mta.hu/ contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.
Coordinator Country	Hungary [HU]
Project website	http://www.2dmaterials.hu
Total cost	1˙496˙500 €
EC max contribution	1˙496˙500 € (100%)
Programme	1. H2020-EU.1.1. (EXCELLENT SCIENCE - European Research Council (ERC))
Code Call	ERC-2015-STG
Funding Scheme	ERC-STG
Starting year	2016
Duration (year-month-day)	from 2016-07-01 to 2021-06-30

Partnership

Take a look of project's partnership.

#	participants	country	role	EC contrib. [€]
1	ENERGIATUDOMANYI KUTATOKOZPONT ENERGIATUDOMANYI KUTATOKOZPONT Organization address address: KONKOLY THEGE MIKLOS UT 29-33 city: Budapest postcode: 1121 website: http://www.energia.mta.hu/ contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	HU (Budapest)	coordinator	1˙496˙500.00

Map

Project objective

IIn today’s electronics, the information storage and processing are performed by independent technologies. The information-processing is based on semiconductor (silicon) devices, while non-volatile data storage relies on ferromagnetic metals. Integrating these tasks on a single chip and within the same material technology would enable disruptively new device concepts opening the way towards ultra-high speed electronic circuits. Due to the unique versatility of its electronic and magnetic properties, graphene has a strong potential as a platform for the implementation of such devices. By engineering their structure at the atomic level, graphene nanostructures of metallic, semiconducting, as well as magnetic properties can be realized. Here we propose that the unmatched precision and full edge orientation control of our STM-based nanofabrication technique enables the reliable implementation of such graphene nanostructures, as well as their complex, functional networks. In particular, we propose to experimentally demonstrate the feasibility of (1) semiconductor graphene nanostructures based on the quantum confinement effect, (2) spin-based devices from graphene nanostructures with magnetic edges, as well as (3) novel operation principles based on the interplay of the electronic and spin-degrees of freedom. We propose to demonstrate the electrical control of magnetism in graphene nanostructures, as well as a novel switching mechanism for graphene field effect transistors induced by the transition between two magnetic edge configurations. Exploiting such novel operation mechanisms in graphene nanostructure engineered at the atomic scale is expected to lay the foundations of disruptively new device concepts combining electronic and spin-based mechanisms that can overcome some of the fundamental limitations of today’s electronics.

Publications

List of publications.
year	authors and title	journal	last update
2017	PÃ©ter VancsÃ³, Imre HagymÃ¡si, Levente TapasztÃ³ A magnetic phase-transition graphene transistor with tunable spin polarization published pages: 24008, ISSN: 2053-1583, DOI: 10.1088/2053-1583/aa5f2d	2D Materials 4/2	2020-01-29
2017	PÃ©ter Nemes-Incze, GergÅ‘ Kukucska, JÃ¡nos Koltai, JenÅ‘ KÃ¼rti, Chanyong Hwang, Levente TapasztÃ³, LÃ¡szlÃ³ P. BirÃ³ Preparing local strain patterns in graphene by atomic force microscope based indentation published pages: , ISSN: 2045-2322, DOI: 10.1038/s41598-017-03332-5	Scientific Reports 7/1	2020-01-29
2019	Orsolya TapasztÃ³, Viktor Puchy, Zsolt E. HorvÃ¡th, Zsolt Fogarassy, Eszter BÃ³dis, ZoltÃ¡n KÃ¡roly, Katalin BalÃ¡zsi, Jan Dusza, Levente TapasztÃ³ The effect of graphene nanoplatelet thickness on the fracture toughness of Si3N4 composites published pages: 6858-6862, ISSN: 0272-8842, DOI: 10.1016/j.ceramint.2018.12.180	Ceramics International 45/6	2020-01-29
2018	JÃ¡nos PetÅ‘, TamÃ¡s OllÃ¡r, PÃ©ter VancsÃ³, Zakhar I. Popov, GÃ¡bor Zsolt Magda, Gergely Dobrik, Chanyong Hwang, Pavel B. Sorokin, Levente TapasztÃ³ Spontaneous doping of the basal plane of MoS2 single layers through oxygen substitution under ambient conditions published pages: 1246-1251, ISSN: 1755-4330, DOI: 10.1038/s41557-018-0136-2	Nature Chemistry 10/12	2020-01-29
2019	PÃ©ter VancsÃ³, Zakhar I. Popov, JÃ¡nos PetÅ‘, TamÃ¡s OllÃ¡r, Gergely Dobrik, JÃ³zsef S. Pap, Chanyong Hwang, Pavel B. Sorokin, Levente TapasztÃ³ Transition Metal Chalcogenide Single Layers as an Active Platform for Single-Atom Catalysis published pages: 1947-1953, ISSN: 2380-8195, DOI: 10.1021/acsenergylett.9b01097	ACS Energy Letters 4/8	2020-01-29

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