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TARANTO SIGNED

TowARds Advanced bicmos NanoTechnology platforms for rf and thz applicatiOns

Total Cost €

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EC-Contrib. €

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Partnership

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Project "TARANTO" data sheet

The following table provides information about the project.

Coordinator
STMICROELECTRONICS SA 

Organization address
address: BOULEVARD ROMAIN ROLLAND 29
city: MONTROUGE
postcode: 92120
website: www.st.com

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country France [FR]
 Project website http://tima.univ-grenoble-alpes.fr/taranto/
 Total cost 43˙000˙847 €
 EC max contribution 12˙080˙989 € (28%)
 Programme 1. H2020-EU.2.1.1.7. (ECSEL)
 Code Call H2020-ECSEL-2016-1-RIA-two-stage
 Funding Scheme ECSEL-RIA
 Starting year 2017
 Duration (year-month-day) from 2017-04-01   to  2020-11-30

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    STMICROELECTRONICS SA FR (MONTROUGE) coordinator 565˙441.00
2    STMICROELECTRONICS CROLLES 2 SAS FR (CROLLES) participant 1˙849˙442.00
3    INFINEON TECHNOLOGIES DRESDEN GMBH& CO KG DE (DRESDEN) participant 1˙323˙225.00
4    INFINEON TECHNOLOGIES AG DE (NEUBIBERG) participant 1˙197˙098.00
5    IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUER INNOVATIVE MIKROELEKTRONIK DE (FRANKFURT ODER) participant 887˙906.00
6    NOKIA SOLUTIONS AND NETWORKS GMBH &CO KG DE (MUNCHEN) participant 696˙420.00
7    SIAE MICROELETTRONICA SPA IT (MILANO) participant 582˙983.00
8    MICRAM MICROELECTRONIC GMBH DE (BOCHUM) participant 439˙435.00
9    TECHNISCHE UNIVERSITAET DRESDEN DE (DRESDEN) participant 375˙778.00
10    UNIVERSITE GRENOBLE ALPES FR (GRENOBLE) participant 286˙611.00
11    KARLSRUHER INSTITUT FUER TECHNOLOGIE DE (KARLSRUHE) participant 283˙968.00
12    FRIEDRICH-ALEXANDER-UNIVERSITAET ERLANGEN NUERNBERG DE (ERLANGEN) participant 279˙198.00
13    UNIVERSITA DEGLI STUDI DI ROMA LA SAPIENZA IT (ROMA) participant 253˙750.00
14    INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM BE (LEUVEN) participant 247˙294.00
15    UNIVERSITE DE BORDEAUX FR (BORDEAUX) participant 239˙356.00
16    RUHR-UNIVERSITAET BOCHUM DE (BOCHUM) participant 215˙337.00
17    UNIVERSITE DE MONTPELLIER FR (MONTPELLIER) participant 205˙268.00
18    UNIVERSITAET STUTTGART DE (STUTTGART) participant 197˙246.00
19    UNIVERSITAT LINZ AT (LINZ) participant 196˙753.00
20    POLITECNICO DI MILANO IT (MILANO) participant 193˙375.00
21    UNIVERSITA DEGLI STUDI DI PAVIA IT (PAVIA) participant 190˙312.00
22    STMICROELECTRONICS SRL IT (AGRATE BRIANZA) participant 179˙175.00
23    UNIVERSITA DEGLI STUDI DI MODENA E REGGIO EMILIA IT (MODENA) participant 171˙500.00
24    UNIVERSITE DE LILLE FR (LILLE) participant 165˙200.00
25    DICE DANUBE INTEGRATED CIRCUIT ENGINEERING GMBH & CO KG AT (LINZ) participant 161˙047.00
26    UNIVERSITAT DES SAARLANDES DE (SAARBRUCKEN) participant 157˙223.00
27    INRAS GMBH AT (LINZ) participant 132˙855.00
28    ISD LYSEIS OLOKRIROMENON SYSTIMATONANONYMOS ETAIREIA EL (MAROUSSI) participant 117˙750.00
29    BERGISCHE UNIVERSITAET WUPPERTAL DE (WUPPERTAL) participant 108˙850.00
30    XMOD TECHNOLOGIES FR (BORDEAUX) participant 94˙821.00
31    RHEINISCH-WESTFAELISCHE TECHNISCHE HOCHSCHULE AACHEN DE (AACHEN) participant 86˙362.00
32    ALCATEL-LUCENT DEUTSCHLAND AG DE (STUTTGART) participant 0.00
33    UNIVERSITA DELLA CALABRIA IT (ARCAVACATA DI RENDE) participant 0.00
34    UNIVERSITE DES SCIENCES ET TECHNOLOGIES DE LILLE - LILLE I FR (VILLENEUVE D'ASCQ) participant 0.00
35    UNIVERSITE GRENOBLE ALPES FR (SAINT MARTIN D'HERES) participant 0.00

Map

 Project objective

The TARANTO project targets to break the technological barriers to the development of the next BiCMOS technology platforms, allowing the improvement of the performance of the HBT (Heterojunction Bipolar Transistors) with a much higher level of integration. This new generation of transistors HBT will be a key factor to meet the needs of high-speed communications systems and high data rate required for the integration of heterogeneous intelligent systems as well as for intelligent mobility systems that will be used in future fully automated transport systems. The main objectives of this project will be to develop transistors HBT offering high maximum frequency (Fmax: 600GHz) built to very high density CMOS processes: 130 / 90nm for IFX, 55 / 28nm to ST, while IHP will work on the project to achieve maximum frequencies of 700GHz remaining compatible with IFX and ST BiCMOS processes.

The project consortium gathers the main European players in the value chain for these applications at very high frequencies, from laboratories to industrial users, thus ensuring the highest scientific level and the ability to validate the work carried out on appropriate demonstrators.

 Deliverables

List of deliverables.
351_Intermediate report on System-level integration, simulation and characterization of targeted application circuits Documents, reports 2020-02-12 11:15:35

Take a look to the deliverables list in detail:  detailed list of TARANTO deliverables.

 Publications

year authors and title journal last update
List of publications.
2017 H. Rücker, B Heinemann
High Performance SiGe HBT BiCMOS Technology
published pages: , ISSN: , DOI:
IEEE RFIC Workshop: Silicon Technologies for mmWave Applications 2020-02-12
2018 H. Rücker, B Heinemann
High Performance SiGe BiCMOS Technology
published pages: , ISSN: , DOI:
German Microwave Week (GeMIC) 2020-02-12
2017 P. Monsurrò, A. Trifiletti, L. Angrisani, M. D’Arco
Multi-rate signal processing based model for high speed digitizers
published pages: , ISSN: , DOI:
International Instrumentation and Measurement Technology Conference 2020-02-12
2018 K. Aufinger, J. Boeck, H. Knapp, W. Liebl, D. Manger, T. F. Meister, R. Lachner
SiGe BiCMOS Technology for mm-Wave Applications – an Overview
published pages: , ISSN: , DOI:
18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Applications 2020-02-12
2017 S. Balanethiram, J. Berkner, R. D’Esposito, S. Fregonese, D. Celi, T. Zimmer
Extracting the Temperature Dependence of Thermal Resistance from Temperature-Controlled DC Measurements of SiGe HBTs
published pages: , ISSN: , DOI:
IEEE BCTM 2020-02-12
2017 M. Deng, S. Fregonese, D. Céli, P. Chevalier, M. De Matos, T. Zimmer
Design of Silicon On-Wafer Sub-THz Calibration Kit
published pages: , ISSN: , DOI:
IEEE Mediterranean Microwave Symposium 2017 2020-02-12
2017 T. Zimmer, S. Fregonese, M. Deng
Beyond 100 GHz: High frequency device characterization for THz applications
published pages: , ISSN: , DOI:
2nd Sino MOS-AK Workshop 2020-02-12
2018 C. Yadav, M. Deng, M. De Matos, S. Fregonese, T. Zimmer
Importance of complete characterization setup on on-wafer TRL calibration in sub-THz range
published pages: , ISSN: , DOI:
IEEE International Conference on Microelectronic Test Structures 2020-02-12
2017 B. Heinemann
High-Frequency SiGe HBTs for Communication, Radar and Imaging
published pages: , ISSN: , DOI:
Compound Semiconductor Week (CSW) 2020-02-12
2017 S. Balanethiram, A. Chakravorty, R. D’Esposito, S. Fregonese, D. Céli, T. Zimmer
Accurate Modeling of Thermal Resistance for On-Wafer SiGe HBTs Using Average Thermal Conductivity
published pages: , ISSN: 0018-9383, DOI:
IEEE Transactions on Electron Devices 2020-02-12
2017 R. D\'Esposito, S. Fregonese, S. Balanethiram, and T. Zimmer
Frequency analysis of the penetration depth of the heat flow in SiGe HBTs
published pages: , ISSN: , DOI:
29th BipAk 2020-02-12
2017 A. Mukherjee, W. Liang, M. Schroter, U. Pfeiffer, R. Jain,J. Grzyb and P. Hillger
Millimeter-wave Circuits and Applications
published pages: , ISSN: , DOI:
River Publishers Series in Electronic Materials and Devices 2020-02-12
2017 W. Liang, A. Mukherjee, P. Sakalas, A. Pawlak, M. Schröter
96 GHz 4.7 mW low-power frequency tripler with 0.5 V supply voltage
published pages: , ISSN: 0013-5194, DOI:
IET Electronics Letters 2020-02-12
2017 M. Jaoul, D. Céli, C. Maneux, M. Schröter, A. Pawlak
Avalanche Compact Model Featuring SiGe HBTs Characteristics up to BVCBO
published pages: , ISSN: , DOI:
47th IEEE European Solid-State Device Research Conference (ESSDERC 2017) 2020-02-12
2018 M. Margalef-Rovira, M. J. Barragan, P. Ferrari, and E. Pistono
An Oscillation-Based Test technique for on-chip testing of mm-wave phase shifters
published pages: , ISSN: , DOI:
IEEE VLSI Test Symposium 2018 2020-02-12
2017 R. D’Esposito, S. Balanethiram, J.L. Battaglia, S. Frégonèse, T. Zimmer
Thermal penetration depth investigations and BEOL metal impact on the thermal impedance in SiGe HBTs
published pages: , ISSN: 0741-3106, DOI:
IEEE Electron Device Letters 2020-02-12
2017 C. Mukherjee, T. Jacquet, G. Fischer, T. Zimmer, C. Maneux
Hot Carrier Degradation in SiGe HBTs: A Physical and Versatile Aging Compact Model
published pages: , ISSN: 0018-9383, DOI:
IEEE Transactions on Electron Devices 2020-02-12
2017 P. Sakalas, M. Schroter, T. Nardmann, H. Zirath
Harmonic distortion analysis of InP HBTs with 650 GHz fmax for high data rate communication systems
published pages: , ISSN: , DOI:
IEEE Compound Semiconductor Circuit Symposium (CSICS) 2020-02-12
2018 J. Eisenbeis, M. Krause, T. Mahler, S. Scherr, and T. Zwick
Path based MIMO channel model for hybrid beamforming architecture analysis
published pages: , ISSN: , DOI:
11th German Microwave Conference (GeMiC), 2018 2020-02-12
2019 C. Yadav, S. Fregonese, M. Deng, M. Cabbia, M. De Matos, M. Jaoul, and T. Zimmer
Analysis of test structure design induced variation in on Si On-wafer TRL calibration in sub-THz
published pages: , ISSN: , DOI:
International Conference on Microelectronic Test Structures (ICMTS) 2020-02-12
2018 M. Seif, F. Pascal, B. Sagnes, J. Elbeyrouthy, A. Hoffmann, S. Haendler, P. Chevalier, and D. Gloria
Localization of 1/f noise sources in Si/SiGe:C HBTs
published pages: , ISSN: , DOI:
8th Int. Conf. Unsolved Probl. Noise - UPON 2018 2020-02-12
2018 Sebastien Fregonese, Magali De matos, Marina Deng, Manuel Potereau, Cedric Ayela, Klaus Aufinger, Thomas Zimmer
On-Wafer Characterization of Silicon Transistors Up To 500 GHz and Analysis of Measurement Discontinuities Between the Frequency Bands
published pages: 3332-3341, ISSN: 0018-9480, DOI: 10.1109/tmtt.2018.2832067
IEEE Transactions on Microwave Theory and Techniques 66/7 2020-02-12
2019 Mathieu Jaoul, Cristell Maneux, Didier Celi, Michael Schroter, Thomas Zimmer
A Compact Formulation for Avalanche Multiplication in SiGe HBTs at High Injection Levels
published pages: 264-270, ISSN: 0018-9383, DOI: 10.1109/ted.2018.2875494
IEEE Transactions on Electron Devices 66/1 2020-02-12
2018 W. Liebl, D. Manger, A. Pribil, S. Rothenhäußer, J. Böck, K. Aufinger
New SiGe Technologies with Cut-off Frequencies towards 600 GHz and their Potential Impact on Future mmW Sensing in Automotive and Industrial Applications
published pages: , ISSN: , DOI:
IEEE IMS Workshop : Integrated mm Wave Sensing Technology for Automotive, Industrial and Healthcare 2020-02-12
2018 A. Angrisani, M. D’Arco, P. Monsurrò, A. Trifiletti
A 2-channel digitizer based on MFP strategy
published pages: 52002, ISSN: 1742-6588, DOI: 10.1088/1742-6596/1065/5/052002
Journal of Physics: Conference Series 1065 2020-02-12
2019 K. Schuh, S. T. Le, R. Dischler and F. Buchali
Transmission of 90 Gbd 32 QAM Over 480 km of SSMF with Kramers-Kronig Detection
published pages: , ISSN: , DOI:
2020-02-12
2018 Pietro Monsurrò, Alessandro Trifiletti, Leopoldo Angrisani, Mauro D\'Arco
Streamline calibration modelling for a comprehensive design of ATI-based digitizers
published pages: 386-393, ISSN: 0263-2241, DOI: 10.1016/j.measurement.2018.04.099
Measurement 125 2020-02-12
2018 J. L. Battaglia, R. D’Esposito, S. Frégonèse, and T. Zimmer
Heat transfer analysis in SiGe heterojunction bipolar transistor using analytical and system identification approaches
published pages: , ISSN: , DOI:
16th International Heat Transfer Conference (IHTC) 2020-02-12
2019 M. Couret, G. Fischer, S. Frégonèse, T. Zimmer, and C. Maneux
Physical, small signal and pulsed thermal impedance characterization of multi-fingers SiGe HBTs close to the SOA edges
published pages: , ISSN: , DOI:
International Conference on Microelectronic Test Structures (ICMTS) 2020-02-12
2018 Joerg Eisenbeis, Tobias Mahler, Pablo Ramos Lopez, Thomas Zwick
CHANNEL ESTIMATION METHOD FOR SUBARRAY BASED HYBRID BEAMFORMING SYSTEMS EMPLOYING SPARSE ARRAYS
published pages: 25-38, ISSN: 1937-8718, DOI: 10.2528/pierc18062506
Progress In Electromagnetics Research C 87 2020-02-12
2019 Sebastien Fregonese, Marina Deng, Magali De Matos, Chandan Yadav, Simon Joly, Bernard Plano, Christian Raya, Bertrand Ardouin, Thomas Zimmer
Comparison of On-Wafer TRL Calibration to ISS SOLT Calibration With Open-Short De-Embedding up to 500 GHz
published pages: 89-97, ISSN: 2156-342X, DOI: 10.1109/tthz.2018.2884612
IEEE Transactions on Terahertz Science and Technology 9/1 2020-02-12
2018 A. Angrisani, M. D’Arco, P. Monsurrò, A. Trifiletti
Parallel and hierarchical architectures of 4-channel MFP digitizer
published pages: 52003, ISSN: 1742-6588, DOI: 10.1088/1742-6596/1065/5/052003
Journal of Physics: Conference Series 1065 2020-02-12
2017 C. Mukherjee, T. Jacquet, A. Chakravorty, T. Zimmer, J. Boeck, K. Aufinger, C. Maneux
Random telegraph noise in SiGe HBTs: Reliability analysis close to SOA limit
published pages: 146-152, ISSN: 0026-2714, DOI: 10.1016/j.microrel.2017.05.001
Microelectronics Reliability 73 2020-02-12
2018 C. Yadav, M. Deng, S. Fregonese, M. De Matos, T. Zimmer
Extension of HICUM/L2 Avalanche Model at High Current: Proposal
published pages: , ISSN: , DOI:
30th BipAk 2020-02-12
2019 M. Jaoul, D. Céli, D. Ney, C. Maneux, and T. Zimmer
Analysis of a failure mechanism occurring in SiGe HBTs under mixed-mode stress conditions
published pages: , ISSN: , DOI:
International Conference on Microelectronic Test Structures (ICMTS) 2020-02-12
2018 J. Borrel, A. Gauthier, F. Deprat, V. Lu, F. Abbate, S. Joblot, L.-R. Clément, H. Tupin, W. Zou, E. Arevalo, P. Chevalier, and D. Dutartre
Thin film amorphization reduction using heated implantation for prevention of temperature-induced dewetting of implanted SOI
published pages: , ISSN: , DOI:
Proc. IIT 2020-02-12
2018 S. T. Le, K. Schuh, M. Chagnon, F. Buchali and H. Buelow
1.6Tbps WDM Direct Detection Transmission with Virtual-Carrier over 1200km
published pages: , ISSN: , DOI:
2020-02-12
2019 S. T. Le, K. Schuh, R. Dischler, F. Buchali, L. Schmalen and H. Buelow
5x—510 Gbps Single-Polarization Direct-Detection WDM Transmission over 80 km of SSMF
published pages: , ISSN: , DOI:
2020-02-12

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