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Report

Teaser, summary, work performed and final results

Periodic Reporting for period 2 - TARANTO (TowARds Advanced bicmos NanoTechnology platforms for rf and thz applicatiOns)

Teaser

Summary

The TARANTO project targets to break the technological barriers to the development of the next BiCMOS technology
platforms, allowing the improvement of the performance of the HBT (Heterojunction Bipolar Transistors) with a much
higher level of integration. This new generation of transistors HBT will be a key factor to meet the needs of highspeed
communications systems and high data rate required for the integration of heterogeneous intelligent systems
as well as for intelligent mobility systems that will be used in future fully automated transport systems. The main
objectives of this project will be to develop transistors HBT offering high maximum frequency (Fmax: 600GHz) built
to very high density CMOS processes: 130 / 90nm for IFX, 55 / 28nm to ST, while IHP will work on the project to
achieve maximum frequencies of 700GHz remaining compatible with IFX and ST BiCMOS processes.
The project consortium gathers the main European players in the value chain for these applications at very high
frequencies, from laboratories to industrial users, thus ensuring the highest scientific level and the ability to validate
the work carried out on appropriate demonstrators.

Work performed

For the development of the next industrial bipolar technology, IHP, IFD and IFAG continued their investigations on performance enhancements of the HBT concept with epitaxial base link (EBL) in joint fabrication runs. Furthermore, IFD and IFAG worked on the establishment of an EBL SiGe transistor which is completely processed in Infineon manufacturing lines. ST specified a reduced temperature budget which is compatible to 55nm CMOS processing and a new proprietary transistor architecture called EXBIC. The partners achieved the fabrication of the circuits of the first design cycle, the preparation of the process technologies for the second design cycle (B55X for ST, and B11HFC+ for Infineon) with inermediate maximum oscillation frequency and the investigation of device concepts towards the final target in RF-performance of Taranto.
And in order to support development of this technology, with cut of frequency up to 700GHz, transistor architecture has been studied through physical simulation to define and launch first devices fabrication. Those physical simulations have enabled the extraction of a first electrical transistor model suitable for its evaluation in design. In terms of characterization, LFN noise measurement capability under Xrad conditions, S parameter, Noise Figure and Load Pull capability up respectively 500GHz, 260GHz and 200GHz are in deployment.
Specifications for different Smart Systems have been stated together with definition of testbeds for system assembling and characterization. Then, subsystem and circuit specifications have been derived, and Integrated Circuit design activity has been started in both Infineon B11HFC and ST BiCMOS55 technologies in order to provide innovative components needed to compose the defined Smart Systems. A first set of integrated circuits has been produced in B11HFC technology, and in BiCMOS55 technology. Chips are evaluated while the demonstrators and testbed have been largely defined.

Final results

The superior highfrequency performance of SiGe HBTs facilitates the integration of RF
functionalities on smart electronic chips with a performance that cannot been reached
even using the most advanced pure CMOS technologies in the near future, while the
combination of HBTs and CMOS allows to optimize both analog and digital
performances.
TARANTO aims at further strengthening the leading position of the European
semiconductor industry in SiGe BiCMOS technology and at providing a solid
industrial base for the development of new products in areas such as
telecommunications, home electronics, and car electronics which are of key importance
for Europeâ€™s high-tech industries.
The first results confirm the positioning