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GLISS SIGNED

Gliding epitaxy for inorganic space-power sheets

Total Cost €

0

EC-Contrib. €

0

Partnership

0

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 GLISS project word cloud

Explore the words cloud of the GLISS project. It provides you a very rough idea of what is the project "GLISS" about.

photovoltaic    multijunction    technologies    registry    electronic    provision    satellite    realizing    designed    efficiency    thick    ultra    scalable    crystal    heavy    afforded    epitaxial    global    mechanical    economically    universal    fundamental    thin    accelerate    demonstrated    generation    restrictions    release    sustainable    modern    prevent    substrates    protective    launch    extraction    prospect    nm    limited    form    free    enhancement    tolerance    hot    flexible    innovation    ranging    panels    coverglass    substrate    unlimited    interface    drive    lightweight    reuse    energy    structures    rigid    interaction    bonding    fabrication    translational    expensive    operation    provides    surface    rebalance    pristine    intrinsic    exhibits    wafer    efficient    damage    current    film    lt    layer    underlying    grown    carrier    decreased    glide    steady    engineering    radiation    services    nanophotonic    device    suggesting    monolayers    epitaxially    deposited    2d    carriers    selective    equilibrium    architecture    rates    films    despite    geometry    structure    nucleates    pv    removing    power   

Project "GLISS" data sheet

The following table provides information about the project.

Coordinator
THE CHANCELLOR MASTERS AND SCHOLARSOF THE UNIVERSITY OF CAMBRIDGE 

Organization address
address: TRINITY LANE THE OLD SCHOOLS
city: CAMBRIDGE
postcode: CB2 1TN
website: www.cam.ac.uk

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country United Kingdom [UK]
 Total cost 1˙797˙789 €
 EC max contribution 1˙797˙789 € (100%)
 Programme 1. H2020-EU.1.1. (EXCELLENT SCIENCE - European Research Council (ERC))
 Code Call ERC-2019-STG
 Funding Scheme ERC-STG
 Starting year 2020
 Duration (year-month-day) from 2020-01-01   to  2024-12-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    THE CHANCELLOR MASTERS AND SCHOLARSOF THE UNIVERSITY OF CAMBRIDGE UK (CAMBRIDGE) coordinator 1˙797˙789.00

Map

 Project objective

Current satellite technologies are limited by the photovoltaic (PV) panels they require for power generation. Despite steady advances in efficiency afforded by modern III-V multijunction PV, these large, rigid panels are expensive to produce and launch due to their heavy on-wafer architecture and thick protective coverglass, which is necessary to prevent radiation damage. I will develop and demonstrate ultra-thin (<100 nm) III-V PV, for highly efficient, lightweight, and flexible satellite PV provision. Decreased costs will help accelerate universal availability of satellite services, essential for sustainable global development, and removing PV form factor restrictions will drive innovation in satellite design.

Realizing this goal will require a translational program of research, ranging from fundamental design parameters to scalable fabrication methodologies. I recently demonstrated that the ultra-thin form factor exhibits intrinsic radiation tolerance, suggesting the prospect of a coverglass free, flexible system. I will target high efficiency in this geometry by engineering the device architecture to rebalance carrier interaction rates to support generation of non-equilibrium hot-carriers through the use of nanophotonic structures for strong E-field enhancement. The electronic structure will be designed for energy selective hot-carrier extraction, allowing highly efficient operation. Scalable fabrication will be achieved via development of a novel crystal growth method, in which III-V films are grown epitaxially on 2D monolayers. The 2D interface will prevent strong bonding between the deposited layer and an underlying growth substrate, which provides registry information to the crystal as it nucleates. The epitaxial layer will be free to glide across the growth surface during film formation, allowing the mechanical release of pristine films and the unlimited reuse of the growth substrates, enabling scalable, economically viable production of this new device.

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The information about "GLISS" are provided by the European Opendata Portal: CORDIS opendata.

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