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GLISS SIGNED

Gliding epitaxy for inorganic space-power sheets

Total Cost €

0

EC-Contrib. €

0

Partnership

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 GLISS project word cloud

Explore the words cloud of the GLISS project. It provides you a very rough idea of what is the project "GLISS" about.

accelerate    grown    realizing    modern    wafer    substrate    restrictions    enhancement    lt    reuse    operation    heavy    engineering    panels    economically    prevent    carriers    pristine    tolerance    unlimited    interface    damage    prospect    designed    photovoltaic    glide    launch    expensive    architecture    sustainable    demonstrated    lightweight    multijunction    innovation    surface    generation    free    steady    selective    power    current    afforded    form    interaction    fabrication    ultra    limited    films    structures    geometry    nanophotonic    removing    pv    provides    flexible    rebalance    efficient    thick    monolayers    deposited    extraction    mechanical    nucleates    universal    radiation    provision    services    epitaxial    rates    technologies    energy    registry    film    carrier    satellite    nm    efficiency    suggesting    decreased    drive    rigid    fundamental    scalable    electronic    crystal    global    underlying    substrates    exhibits    bonding    structure    2d    device    protective    thin    ranging    coverglass    equilibrium    despite    hot    release    layer    translational    epitaxially    intrinsic   

Project "GLISS" data sheet

The following table provides information about the project.

Coordinator
THE CHANCELLOR MASTERS AND SCHOLARSOF THE UNIVERSITY OF CAMBRIDGE 

Organization address
address: TRINITY LANE THE OLD SCHOOLS
city: CAMBRIDGE
postcode: CB2 1TN
website: www.cam.ac.uk

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country United Kingdom [UK]
 Total cost 1˙797˙789 €
 EC max contribution 1˙797˙789 € (100%)
 Programme 1. H2020-EU.1.1. (EXCELLENT SCIENCE - European Research Council (ERC))
 Code Call ERC-2019-STG
 Funding Scheme ERC-STG
 Starting year 2020
 Duration (year-month-day) from 2020-01-01   to  2024-12-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    THE CHANCELLOR MASTERS AND SCHOLARSOF THE UNIVERSITY OF CAMBRIDGE UK (CAMBRIDGE) coordinator 1˙797˙789.00

Map

 Project objective

Current satellite technologies are limited by the photovoltaic (PV) panels they require for power generation. Despite steady advances in efficiency afforded by modern III-V multijunction PV, these large, rigid panels are expensive to produce and launch due to their heavy on-wafer architecture and thick protective coverglass, which is necessary to prevent radiation damage. I will develop and demonstrate ultra-thin (<100 nm) III-V PV, for highly efficient, lightweight, and flexible satellite PV provision. Decreased costs will help accelerate universal availability of satellite services, essential for sustainable global development, and removing PV form factor restrictions will drive innovation in satellite design.

Realizing this goal will require a translational program of research, ranging from fundamental design parameters to scalable fabrication methodologies. I recently demonstrated that the ultra-thin form factor exhibits intrinsic radiation tolerance, suggesting the prospect of a coverglass free, flexible system. I will target high efficiency in this geometry by engineering the device architecture to rebalance carrier interaction rates to support generation of non-equilibrium hot-carriers through the use of nanophotonic structures for strong E-field enhancement. The electronic structure will be designed for energy selective hot-carrier extraction, allowing highly efficient operation. Scalable fabrication will be achieved via development of a novel crystal growth method, in which III-V films are grown epitaxially on 2D monolayers. The 2D interface will prevent strong bonding between the deposited layer and an underlying growth substrate, which provides registry information to the crystal as it nucleates. The epitaxial layer will be free to glide across the growth surface during film formation, allowing the mechanical release of pristine films and the unlimited reuse of the growth substrates, enabling scalable, economically viable production of this new device.

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The information about "GLISS" are provided by the European Opendata Portal: CORDIS opendata.

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