Explore the words cloud of the SPRInG project. It provides you a very rough idea of what is the project "SPRInG" about.
The following table provides information about the project.
Coordinator |
FORSCHUNGSVERBUND BERLIN EV
Organization address contact info |
Coordinator Country | Germany [DE] |
Project website | http://www.spring-sls.eu/ |
Total cost | 1˙221˙003 € |
EC max contribution | 1˙221˙003 € (100%) |
Programme |
1. H2020-EU.1.3.1. (Fostering new skills by means of excellent initial training of researchers) |
Code Call | H2020-MSCA-ITN-2014 |
Funding Scheme | MSCA-ITN-EID |
Starting year | 2015 |
Duration (year-month-day) | from 2015-01-01 to 2018-12-31 |
Take a look of project's partnership.
# | ||||
---|---|---|---|---|
1 | FORSCHUNGSVERBUND BERLIN EV | DE (BERLIN) | coordinator | 996˙865.00 |
2 | TOP-GAN SP ZOO | PL (WARSZAWA) | participant | 224˙137.00 |
3 | HUMBOLDT-UNIVERSITAET ZU BERLIN | DE (BERLIN) | partner | 0.00 |
4 | Institute of High Pressure Physics, Polish Academy of Sciences | PL (Warsaw) | partner | 0.00 |
The scientific mission of this project is to develop a novel (In,Ga)N alloy that offers completely new opportunities to tune bandgaps and piezoelectric fields in quantum structures for highly efficient optoelectronic devices. This novel “rational” (n InN/m GaN) alloy is based on short period superlattices that stack integer numbers of m (n) monolayers (MLs) of InN (GaN), i.e. heterostructures of pure InN MLs embedded in a GaN matrix. The development of fundamental knowledge on this rational (InN/GaN) alloy as established for other III-V compounds is envisioned as the base for such devices. This objective will be achieved by a bilateral collaboration and the concerted action between Forschungsverbund Berlin (FVB) as academic institution, and TopGaN sp.z.o.o. (TopGaN) as non-academic partner. Besides, the Humboldt-Universität zu Berlin (HU) and the Institute of High- Pressure Physics – Polish Academy of Sciences (UNIPRESS) will also be involved as external partner organizations. As a specific strength, within the project “Short Period Superlattices for Rational (In,Ga)N” (SPRInG) we aim at unifying a unique portfolio of experimental competencies with high-level resources and infrastructures. These create an ideal research environment designed to promote an interdisciplinary collaboration and an international networking of the early-stage researchers (ESRs). The students will professionally develop and meet the challenge to solve very exciting scientific questions of the potential III-nitride future technology for solid state lighting. A quality monitoring scheme will ensure that the ESRs will receive an optimised training, which will prepare and qualify them for the research and development of future technologies in academic and non-academic organizations.
PhD thesis WP3 | Other | 2019-04-05 09:51:35 |
PhD thesis WP2.1 | Other | 2019-04-09 12:57:38 |
PhD thesis WP1.2 | Other | 2019-04-09 12:57:39 |
Critical thickness for dislocation formation in (In,Ga)N buffers on different substrates | Documents, reports | 2019-04-09 12:57:38 |
PhD thesis WP2.2 | Other | 2019-04-05 09:51:35 |
Recombination mechanism in In-rich (InN/GaN) SPSLs | Documents, reports | 2019-04-09 12:57:40 |
PhD thesis WP1.1 | Other | 2019-04-09 12:57:40 |
Defect formation in (In,Ga)N buffers on GaN and alternative substrates | Documents, reports | 2019-03-04 15:27:00 |
Supervisory Board | Other | 2019-02-12 12:29:48 |
Reconstruction effects on In incorporation in SPSLs | Documents, reports | 2019-03-04 11:00:02 |
In wetting and InN reconstructions on ZnO and on relaxed (In,Ga)N buffers deposited on Ga- and N-polar GaN substrates with and without miscut | Documents, reports | 2019-03-04 15:24:36 |
MTR | Other | 2019-02-12 12:29:48 |
Ordering in SPSLs and factors affecting In fluctuations and interface roughness in SPSLs | Documents, reports | 2019-03-04 11:00:02 |
Progress Report | Documents, reports | 2019-03-04 15:24:35 |
Influence of active species on In wetting and InN reconstructions on Gaand N-polar GaN substrates | Documents, reports | 2019-02-12 12:29:46 |
Draft Periodic report | Documents, reports | 2019-02-12 12:29:51 |
Influence of Mg as active specie on the reconstructions of InN and on the incorporation of In in (InN/GaN) SPSLs | Documents, reports | 2019-02-12 12:29:46 |
Reliable method for analysis and quantification of In fluctuations | Documents, reports | 2019-02-12 12:29:54 |
Take a look to the deliverables list in detail: detailed list of SPRInG deliverables.
year | authors and title | journal | last update |
---|---|---|---|
2018 |
Torsten Ernst, Caroline Chèze, Raffaella Calarco InN and GaN/InN monolayers grown on ZnO( 000 1 ¯) and ZnO(0001) published pages: 115305, ISSN: 0021-8979, DOI: 10.1063/1.5041880 |
Journal of Applied Physics 124/11 | 2019-05-29 |
2018 |
L. Lymperakis, T. Schulz, C. Freysoldt, M. Anikeeva, Z. Chen, X. Zheng, B. Shen, C. Chèze, M. Siekacz, X. Q. Wang, M. Albrecht, J. Neugebauer Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells published pages: , ISSN: 2475-9953, DOI: 10.1103/PhysRevMaterials.2.011601 |
Physical Review Materials 2/1 | 2019-04-18 |
2018 |
P. Wolny, M. Anikeeva, M. Sawicka, T. Schulz, T. Markurt, M. Albrecht, M. Siekacz, C. Skierbiszewski Dependence of indium content in monolayer-thick InGaN quantum wells on growth temperature in In x Ga 1-x N/In 0.02 Ga 0.98 N superlattices published pages: 65701, ISSN: 0021-8979, DOI: 10.1063/1.5032287 |
Journal of Applied Physics 124/6 | 2019-04-18 |
2018 |
J. Moneta, M. Siekacz, E. Grzanka, T. Schulz, T. Markurt, M. Albrecht, J. Smalc-Koziorowska Peculiarities of plastic relaxation of (0001) InGaN epilayers and their consequences for pseudo-substrate application published pages: 31904, ISSN: 0003-6951, DOI: 10.1063/1.5030190 |
Applied Physics Letters 113/3 | 2019-05-29 |
2017 |
C. Chèze , F. Feix , M. Anikeeva , T. Schulz , M. Albrecht , H. Riechert , O. Brandt , R. Calarco In/GaN(0001)-(√3×√3)R30° adsorbate structure as a template for embedded (In,Ga)N/GaN monolayersand short-period superlattices published pages: 72104, ISSN: 0003-6951, DOI: 10.1063/1.4976198 |
Applied Physics Letters 110 | 2019-05-29 |
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