ASCENT SIGNED
Access to European Nanoelectronics Network
Total Cost €
0EC-Contrib. €
0Partnership
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0ASCENT project word cloud
Explore the words cloud of the ASCENT project. It provides you a very rough idea of what is the project "ASCENT" about.
Project "ASCENT" data sheet
The following table provides information about the project.
| Coordinator |
UNIVERSITY COLLEGE CORK - NATIONAL UNIVERSITY OF IRELAND, CORK
Organization address contact info |
| Coordinator Country | Ireland [IE] |
| Project website | http://www.ascent.network |
| Total cost | 4˙698˙623 € |
| EC max contribution | 4˙698˙623 € (100%) |
| Programme |
1. H2020-EU.1.4.1.2. (Integrating and opening existing national and regional research infrastructures of European interest) |
| Code Call | H2020-INFRAIA-2014-2015 |
| Funding Scheme | RIA |
| Starting year | 2015 |
| Duration (year-month-day) | from 2015-05-01 to 2019-07-31 |
Partnership
Take a look of project's partnership.
| # | ||||
|---|---|---|---|---|
| 1 | UNIVERSITY COLLEGE CORK - NATIONAL UNIVERSITY OF IRELAND, CORK | IE (Cork) | coordinator | 1˙761˙452.00 |
| 2 | COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES | FR (PARIS 15) | participant | 1˙478˙001.00 |
| 3 | INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM | BE (LEUVEN) | participant | 1˙459˙170.00 |
Map
Project objective
ASCENT will provide access to the world’s most advanced 10 nm and beyond-CMOS nanoelectronics data and test structures in Europe’s leading nanofabrication research institutes. The institutes involved have extensive advanced semiconductor processing fabrication facilities, flexible nanofabrication facilities, advanced electrical characterization equipment and expertise in atomistic and TCAD modeling. This will be the first time that access to these state-of-the-art devices and test structures will be available anywhere in the world. The impact of this access, and the resulting advances that will be made, will contribute significantly to competitiveness and growth capacity in the Europe’s nanoelectronics industry.
ASCENT will enable Europe’s world-leading atomic scale device, TCAD and compact modeling community to perform the systematic studies that are required to develop nanoscale design methodologies and to identify the impact of quantum effects on sub-10 nm device performance.
ASCENT provides an interface to global industrial leaders in nanoelectronics through the Industry Innovation Committee and through activities designed to transfer IP and technology uptake from the supported research activities. The results from the access activities will be fed back to device manufacturers to future improve the nanoscale devices being developed.
ASCENT will reach out to the research community through a co-ordinated marketing campaign and will offer a simple single access route to the advanced technologies provided. ASCENT will provide technical and logistical support to Users and the results of the Access activities will be published and shared at User Workshops enabling strong interaction between the Users and Providers.
ASCENT is a unique opportunity for researchers in Europe to gain access to world-leading technologies that are being developed in Europe’s leading institutes and ensure Europe remains at the forefront of global nanoelectronics development.
Deliverables
| 4th ASCENT access summary report | Websites, patent fillings, videos etc. | 2020-04-02 11:21:37 |
| Final Press Release | Websites, patent fillings, videos etc. | 2020-04-02 11:21:25 |
| 3rd ASCENT access summary report | Documents, reports | 2019-05-07 12:01:49 |
| Access data site | Websites, patent fillings, videos etc. | 2019-05-07 12:01:49 |
| 3rd Best Practice Report - Tyndall | Documents, reports | 2019-05-07 12:01:49 |
| 2nd ASCENT project flyer | Websites, patent fillings, videos etc. | 2019-05-07 12:01:49 |
| 3rd Users Community Workshop | Websites, patent fillings, videos etc. | 2019-05-07 12:01:49 |
| Joint Research Activites - Call 3 results | Documents, reports | 2019-05-07 12:01:49 |
| 3rd Best Practice Report - IMEC | Documents, reports | 2019-05-07 12:01:49 |
| 2nd Best Practice Report - IMEC | Documents, reports | 2019-05-07 12:01:49 |
| 2nd ASCENT access summary report | Websites, patent fillings, videos etc. | 2019-05-07 12:01:49 |
| 2nd Best Practice Report - Tyndall | Documents, reports | 2019-05-07 12:01:49 |
| 2nd Workshop on Widening Participation | Websites, patent fillings, videos etc. | 2019-05-07 12:01:49 |
| 3rd Best Practice Report - Leti | Documents, reports | 2019-05-07 12:01:49 |
| On-line database | Websites, patent fillings, videos etc. | 2019-05-07 12:01:49 |
| 2nd Best Practice Report - Leti | Documents, reports | 2019-05-07 12:01:49 |
| Joint Research Activites -Call 2 results | Websites, patent fillings, videos etc. | 2019-05-07 12:01:49 |
| 1st Workshop on Widening Participation | Websites, patent fillings, videos etc. | 2019-05-30 13:17:53 |
| 2nd Users Community Workshop | Websites, patent fillings, videos etc. | 2019-05-30 13:18:04 |
| 1st Best Practice Report - IMEC | Documents, reports | 2019-05-30 13:18:23 |
| 1st Users Community Workshop | Websites, patent fillings, videos etc. | 2019-05-30 13:17:44 |
| Project website | Websites, patent fillings, videos etc. | 2019-05-30 13:17:29 |
| 1st ASCENT access summary report | Documents, reports | 2019-05-30 13:18:38 |
| 1st ASCENT project flyer | Websites, patent fillings, videos etc. | 2019-05-30 13:17:34 |
| Press release - project announcement | Websites, patent fillings, videos etc. | 2019-05-30 13:17:30 |
| Joint Research Activities - Call 1 Results | Websites, patent fillings, videos etc. | 2019-05-30 13:18:41 |
| 1st Best Practice Report - Tyndall | Documents, reports | 2019-05-30 13:18:13 |
| On-line Users Forum | Websites, patent fillings, videos etc. | 2019-05-30 13:18:38 |
| 1st Best Practice Report - Leti | Documents, reports | 2019-05-30 13:18:38 |
Take a look to the deliverables list in detail: detailed list of ASCENT deliverables.
Publications
| year | authors and title | journal | last update |
|---|---|---|---|
| 2019 |
V. Kampylafka, A. Kostopoulos, M. Modreanu, M. Schmidt, E. Gagaoudakis, K. Tsagaraki, V. Kontomitrou, G. Konstantinidis, G. Deligeorgis, G. Kiriakidis, E. Aperathitis Long-term stability of transparent n/p ZnO homojunctions grown by rf-sputtering at room-temperature published pages: , ISSN: 2352-8478, DOI: 10.1016/j.jmat.2019.02.006 |
Journal of Materiomics | 2019-09-26 |
| 2019 |
John MacHale, Fintan Meaney, Noel Kennedy, Luke Eaton, Gioele Mirabelli, Mary White, Kevin Thomas, Emanuele Pelucchi, Dirch Hjorth Petersen, Rong Lin, Nikolay Petkov, James Connolly, Chris Hatem, Farzan Gity, Lida Ansari, Brenda Long, Ray Duffy Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5 nm published pages: 225709, ISSN: 0021-8979, DOI: 10.1063/1.5098307 |
Journal of Applied Physics 125/22 | 2019-08-05 |
| 2019 |
A. Mazurak, J. Jasiński, B. Majkusiak Effect of traps-to-gate tunnel communication on C-V characteristics of MIS capacitors published pages: 111011, ISSN: 0167-9317, DOI: 10.1016/j.mee.2019.111011 |
Microelectronic Engineering 215 | 2019-08-05 |
| 2019 |
J. Munoz-Gorriz, D. Blachier, G. Reimbold, F. Campabadal, J. Sune, S. Monaghan, K. Cherkaoui, P. K. Hurley, E. Miranda Assessing the Correlation Between Location and Size of Catastrophic Breakdown Events in High-K MIM Capacitors published pages: 452-460, ISSN: 1530-4388, DOI: 10.1109/tdmr.2019.2917138 |
IEEE Transactions on Device and Materials Reliability 19/2 | 2019-08-05 |
| 2018 |
Yuri V. Gomeniuk, Y Y. Gomeniuk, Pavel N Okholin, Tamara M. Nazarova, Vladimir Djara, Karim Cherkaoui, Paul K. Hurley, A. N. Nazarov Low-Temperature RF Plasma Treatment Effect on Junctionless Pd-Al 2 O 3 -InGaAs MISFET Operation published pages: 137-142, ISSN: 1938-5862, DOI: 10.1149/08508.0137ecst |
ECS Transactions 85/8 | 2019-06-13 |
| 2016 |
A. Rodriguez-Fernandez; S. Monaghan; J. Suñé; P.K. Hurley; X. Aymerich; E. Miranda Nonhomogeneous Generation of Filamentary Paths in High-K Oxide Films Caused by Localized Electrical Stress published pages: , ISSN: , DOI: |
23rd International Workshop on Oxide Electronics, 12-14 October 2016, Nanjing, China Annual | 2019-06-13 |
| 2019 |
Andrzej Mazurak, Jakub Jasin´ski, Bogdan Majkusiak Determination of border/bulk traps parameters based on ( C - G - V ) admittance measurements published pages: 32904, ISSN: 2166-2754, DOI: 10.1116/1.5060674 |
Journal of Vacuum Science & Technology B 37/3 | 2019-08-05 |
| 2017 |
J. Muñoz-Gorriz, S. Monaghan, K. Cherkaoui, J. Suñé, P.K. Hurley, E. Miranda Spatial analysis of failure sites in large area MIM capacitors using wavelets published pages: 10-16, ISSN: 0167-9317, DOI: 10.1016/j.mee.2017.04.011 |
Microelectronic Engineering 178 | 2019-06-13 |
| 2017 |
J. Muñoz-Gorriz; S. Monaghan; K. Cherkaoui; J. Suñé; P.K. Hurley; E. Miranda Exploring the Breakdown Spot Spatial Distribution in Metal-Insulator-Metal Capacitors Using the Wavelets Method published pages: , ISSN: , DOI: |
DRIP XVII, 17th Conference on defects-recognition, imaging and physics in semiconductors, 8-12 October 2017, Valladolid, Spain Annual | 2019-06-13 |
| 2017 |
Peter Schüffelgen, Daniel Rosenbach, Elmar Neumann, Martin P. Stehno, Martin Lanius, Jialin Zhao, Meng Wang, Brendan Sheehan, Michael Schmidt, Bo Gao, Alexander Brinkman, Gregor Mussler, Thomas Schäpers, Detlev Grützmacher Stencil lithography of superconducting contacts on MBE-grown topological insulator thin films published pages: 183-187, ISSN: 0022-0248, DOI: 10.1016/j.jcrysgro.2017.03.035 |
Journal of Crystal Growth 477 | 2019-06-13 |
| 2017 |
Yu.V. Gomeniuk, Yu.Yu. Gomeniuk, P.N. Okholin, T.M. Nazarova, K. Cherkaoui, P.K. Hurley and A.N. Nazarov Low-temperature RF plasma treatment of junctionless Pd-Al2O3-InGaAs MISFETs published pages: 205-6, ISSN: , DOI: |
Promising Trends of Modern Electronics, Informational and Computer systems (MEICS-2017), November 22-24, 2017, Dnipro (Ukraine) Annual | 2019-06-13 |
| 2018 |
Maart van Druenen, Gillian Collins, Colm Glynn, Colm O’Dwyer, Justin D. Holmes Functionalization of SiO 2 Surfaces for Si Monolayer Doping with Minimal Carbon Contamination published pages: 2191-2201, ISSN: 1944-8244, DOI: 10.1021/acsami.7b16950 |
ACS Applied Materials & Interfaces 10/2 | 2019-06-13 |
| 2018 |
Aleksander Pajkanovic Design and Characterisation of an Inductor and a Low-Noise Amplifier in Monolithic Integrated Circuit Technology for Wideband Operation published pages: , ISSN: , DOI: |
2019-06-07 | |
| 2019 |
S. Iadanza, A. Tedesco, G. Giannino, M. Grande, L. Ó Faolain Silicon nitride 1D-photonic crystal cavity for optical sensing in the near-infrared spectrum in air and liquid published pages: , ISSN: , DOI: |
Photonics Ireland 2018 Biennial | 2019-06-07 |
| 2017 |
Carlos Márquez Electrical Characterization of Reliability in Advanced Silicon-on-Insulator Structures for sub-22nm Technologies published pages: , ISSN: , DOI: |
2019-06-07 | |
| 2018 |
Yu.V. Gomeniuk, P.N. Okholin, T.E.Rudenko, Yu.Yu. Gomeniuk, T.M. Nazarova, V. Djara, K. Cherkaoui, P.K. Hurley, A.N. Nazarov RF Plasma Treatment of Junctionless Pd-Al2O3-InGaAs MISFETs published pages: , ISSN: , DOI: |
VIII Ukrainian scientific conference on physics of semiconductors (USCPS-8) October 2-4 | 2019-06-07 |
| 2018 |
Martino Aldrigo, Mircea Dragoman, Mircea Modreanu, Ian Povey, Sergiu Iordanescu, Dan Vasilache, Adrian Dinescu, Mazen Shanawani, Diego Masotti \"Harvesting Electromagnetic Energy in the published pages: 2973-2980, ISSN: 0018-9383, DOI: 10.1109/ted.2018.2835138 |
IEEE Transactions on Electron Devices 65/7 | 2019-06-07 |
| 2016 |
Liang Ye Molecular monolayers for doping silicon : from doping dose control to device application published pages: , ISSN: , DOI: 10.3990/1.9789036541497 |
2019-05-07 | |
| 2017 |
T. Karatsori et al Statistical Characterization and Modeling of Drain Current Local and Global Variability in 14nm bulk FinFETs published pages: , ISSN: , DOI: |
30th International Conference on Microelectronics Test Structures | 2019-06-13 |
| 2017 |
M. Karner et al Vertically Stacked Nanowire MOSFETS for Sub-10 nm Nodes: Advanced Topography, Device, Variability, and Reliability Simulations published pages: , ISSN: , DOI: |
Technical Digest of the 2016 International Electron Devices Meeting | 2019-06-13 |
| 2016 |
T. Chiarella, N. Cordero, J. Donnelly, O. Faynot, J. Greer, D. Holden, G. Maxwell, J. Mitard, A. Mercha, G. Reimbold, P. Roseingrave, V. Terzieva Modelling 14 nm CMOS and Emerging Devices through ASCENT published pages: , ISSN: , DOI: |
2016 ESSDERC Proceedings | 2019-06-13 |
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