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RESCUE SIGNED
REsistive-Switch CompUting bEyond CMOS
Total Cost €
0EC-Contrib. €
0Partnership
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0RESCUE project word cloud
Explore the words cloud of the RESCUE project. It provides you a very rough idea of what is the project "RESCUE" about.
circuits
nm
resistive
resistance
oxide
storage
logic
capability
transistor
metal
complexity
memory
redox
strength
provides
cmos
switching
moore
generation
complementary
demonstration
prolong
computing
digital
fabrication
reactions
switches
pursue
alternative
levels
scaling
rs
gates
few
semiconductor
paradigm
downscaling
size
rely
thanks
improves
reram
electrically
computers
scenario
basis
law
device
computer
performance
Project "RESCUE" data sheet
The following table provides information about the project.
| Coordinator |
POLITECNICO DI MILANO
Organization address contact info |
| Coordinator Country | Italy [IT] |
| Project website | http://www.rescue.polimi.it |
| Total cost | 1˙998˙113 € |
| EC max contribution | 1˙998˙113 € (100%) |
| Programme |
1. H2020-EU.1.1. (EXCELLENT SCIENCE - European Research Council (ERC)) |
| Code Call | ERC-2014-CoG |
| Funding Scheme | ERC-COG |
| Starting year | 2015 |
| Duration (year-month-day) | from 2015-08-01 to 2020-07-31 |
Partnership
Take a look of project's partnership.
| # | ||||
|---|---|---|---|---|
| 1 | POLITECNICO DI MILANO | IT (MILANO) | coordinator | 1˙998˙113.00 |
Map
Project objective
Digital computers rely today on CMOS (complementary metal-oxide-semiconductor) technology, which improves its performance every generation thanks to the Moore’s law of downscaling. As CMOS transistor size approaches few nm, alternative logic switches with better scaling capability must be identified to prolong Moore’s law beyond CMOS. Among the emerging switching concepts, resistive switching (RS) devices can change their resistance by electrically-induced redox reactions. RS provides the basis for the resistive memory (ReRAM) technology which is currently investigated as future computer memory and storage technology. The objective of this project is to design, develop and demonstrate a novel computing paradigm based on RS devices. The project will pursue this objective at 3 levels of increasing complexity, namely the device fabrication, the design of new logic gates and the demonstration of computing circuits. RS logic will be finally compared to CMOS and other approaches to identify the strength and the potential applications of RS logic in the computing scenario.
Publications
| year | authors and title | journal | last update |
|---|---|---|---|
| 2019 |
Wei Wang, Ming Wang, Elia Ambrosi, Alessandro Bricalli, Mario Laudato, Zhong Sun, Xiaodong Chen, Daniele Ielmini Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices published pages: , ISSN: 2041-1723, DOI: 10.1038/s41467-018-07979-0 |
Nature Communications 10/1 | 2020-04-04 |
| 2019 |
Roberto Carboni, Elena Vernocchi, Manzar Siddik, Jon Harms, Andy Lyle, Gurtej Sandhu, Daniele Ielmini A Physics-Based Compact Model of Stochastic Switching in Spin-Transfer Torque Magnetic Memory published pages: 4176-4182, ISSN: 0018-9383, DOI: 10.1109/TED.2019.2933315 |
IEEE Transactions on Electron Devices 66/10 | 2020-04-04 |
| 2020 |
Daniele Ielmini, Stefano Ambrogio Emerging neuromorphic devices published pages: 92001, ISSN: 0957-4484, DOI: 10.1088/1361-6528/ab554b |
Nanotechnology 31/9 | 2020-04-04 |
| 2019 |
Irene Munoz-Martin, Stefano Bianchi, Giacomo Pedretti, Octavian Melnic, Stefano Ambrogio, Daniele Ielmini Unsupervised Learning to Overcome Catastrophic Forgetting in Neural Networks published pages: 58-66, ISSN: 2329-9231, DOI: 10.1109/JXCDC.2019.2911135 |
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 5/1 | 2020-04-04 |
| 2018 |
Roberto Carboni, Daniele Ielmini Stochastic Memory Devices for Security and Computing published pages: 1900198, ISSN: 2199-160X, DOI: 10.1002/aelm.201900198 |
Advanced Electronic Materials 5/9 | 2020-04-04 |
| 2019 |
V. Milo, C. Zambelli, P. Olivo, E. Pérez, M. K. Mahadevaiah, O. G. Ossorio, Ch. Wenger, D. Ielmini Multilevel HfO 2 -based RRAM devices for low-power neuromorphic networks published pages: 81120, ISSN: 2166-532X, DOI: 10.1063/1.5108650 |
APL Materials 7/8 | 2020-04-04 |
| 2019 |
Wei Wang, Mario Laudato, Elia Ambrosi, Alessandro Bricalli, Erika Covi, Yu-Hsuan Lin, Daniele Ielmini Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion—Part II: Compact Modeling published pages: 3802-3808, ISSN: 0018-9383, DOI: 10.1109/TED.2019.2928888 |
IEEE Transactions on Electron Devices 66/9 | 2020-04-04 |
| 2019 |
Wei Wang, Mario Laudato, Elia Ambrosi, Alessandro Bricalli, Erika Covi, Yu-Hsuan Lin, Daniele Ielmini Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion Part I: Numerical Modeling published pages: 3795-3801, ISSN: 0018-9383, DOI: 10.1109/TED.2019.2928890 |
IEEE Transactions on Electron Devices 66/9 | 2020-04-04 |
| 2020 |
Valerio Milo, Gerardo Malavena, Christian Monzio Compagnoni, Daniele Ielmini Memristive and CMOS Devices for Neuromorphic Computing published pages: 166, ISSN: 1996-1944, DOI: 10.3390/ma13010166 |
Materials 13/1 | 2020-04-04 |
| 2019 |
Elia Ambrosi, Alessandro Bricalli, Mario Laudato, Daniele Ielmini Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices published pages: 87-98, ISSN: 1359-6640, DOI: 10.1039/c8fd00106e |
Faraday Discussions 213 | 2020-04-04 |
| 2019 |
Zhong Sun, Giacomo Pedretti, Elia Ambrosi, Alessandro Bricalli, Wei Wang, Daniele Ielmini Solving matrix equations in one step with cross-point resistive arrays published pages: 4123-4128, ISSN: 0027-8424, DOI: 10.1073/pnas.1815682116 |
Proceedings of the National Academy of Sciences 116/10 | 2020-04-04 |
| 2018 |
Daniele Ielmini Brain-inspired computing with resistive switching memory (RRAM): Devices, synapses and neural networks published pages: 44-53, ISSN: 0167-9317, DOI: 10.1016/j.mee.2018.01.009 |
Microelectronic Engineering 190 | 2019-06-06 |
| 2016 |
Daniele Ielmini Physical Models of Program and Read Fluctuations in Metal Oxide Resistive RAM published pages: , ISSN: 1938-6737, DOI: 10.1149/07505.0019ecst |
ECS Trans. | 2019-06-06 |
| 2018 |
Alessandro Bricalli, Elia Ambrosi, Mario Laudato, Marcos Maestro, Rosana Rodriguez, Daniele Ielmini Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices published pages: 115-121, ISSN: 0018-9383, DOI: 10.1109/TED.2017.2777986 |
IEEE Transactions on Electron Devices 65/1 | 2019-06-06 |
| 2016 |
P. Fantini; Varesi, E; Lacaita, A.L.; Boniardi, M.; Ciocchini, N.; Ielmini, D.; Laudato, M. Bipolar switching in chalcogenide phase change memory published pages: , ISSN: 2045-2322, DOI: 10.1038/srep29162 |
Scientific Reports 1 | 2019-06-06 |
| 2016 |
S. Ambrogio V. Milo, Z. Wang, S. Balatti, and D. Ielmini Analytical modeling of current overshoot in oxide-based resistive switching memory (RRAM) published pages: , ISSN: 0741-3106, DOI: 10.1109/LED.2016.2600574 |
IEEE Electron Device Lett. | 2019-06-06 |
| 2016 |
Daniele Ielmini Resistive Switching Memories based on Metal Oxides: Mechanisms, Reliability and Scaling published pages: , ISSN: 0268-1242, DOI: 10.1088/0268-1242/31/6/063002 |
Semiconductor Science and Technology | 2019-06-07 |
| 2018 |
Alessandro Bricalli, Elia Ambrosi, Mario Laudato, Marcos Maestro, Rosana Rodriguez, Daniele Ielmini Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part II: Select Devices published pages: 122-128, ISSN: 0018-9383, DOI: 10.1109/TED.2017.2776085 |
IEEE Transactions on Electron Devices 65/1 | 2019-06-06 |
| 2017 |
Giacomo Pedretti, Valerio Milo, Stefano Ambrogio, Roberto Carboni, Stefano Bianchi, Alessandro Calderoni, Nirmal Ramaswamy, Alessandro S. Spinelli, Daniele Ielmini Stochastic learning in neuromorphic hardware via spike timing dependent plasticity with RRAM synapses published pages: 1-1, ISSN: 2156-3357, DOI: 10.1109/JETCAS.2017.2773124 |
IEEE Journal on Emerging and Selected Topics in Circuits and Systems | 2019-06-06 |
| 2016 |
S. Balatti, S. Ambrogio, R. Carboni, V. Milo, Z.-Q. Wang, A. Calderoni, N. Ramaswamy, and D. Ielmini Physical unbiased generation of random numbers with coupled resistive switching devices published pages: , ISSN: 0018-9383, DOI: 10.1109/TED.2016.2537792 |
IEEE Trans. Electron Devices | 2019-06-06 |
| 2017 |
D. Ielmini, V. Milo Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications published pages: 1121-1143, ISSN: 1569-8025, DOI: 10.1007/s10825-017-1101-9 |
Journal of Computational Electronics 16/4 | 2019-06-06 |
| 2016 |
S. Ambrogio, S. Balatti, V. Milo, R. Carboni, Z. Wang, A. Calderoni, N. Ramaswamy, and D. Ielmini Neuromorphic learning and recognition with one-transistor-one-resistor synapses and bistable metal oxide RRAM published pages: , ISSN: 0018-9383, DOI: 10.1109/TED.2016.2526647 |
IEEE Trans. Electron Devices | 2019-06-06 |
| 2017 |
G. Pedretti, V. Milo, S. Ambrogio, R. Carboni, S. Bianchi, A. Calderoni, N. Ramaswamy, A. S. Spinelli, D. Ielmini Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity published pages: , ISSN: 2045-2322, DOI: 10.1038/s41598-017-05480-0 |
Scientific Reports 7/1 | 2019-06-06 |
| 2016 |
Z. Wang, S. Ambrogio, S. Balatti, S. Sills, A. Calderoni, N. Ramaswamy, D. Ielmini Post-cycling degradation in metal-oxide bipolar resistive switching memory (RRAM) published pages: , ISSN: 0018-9383, DOI: 10.1109/TED.2016.2604370 |
IEEE Trans. Electron Devices | 2019-06-06 |
| 2016 |
Agostino ePirovano; Mario eLaudato; Paolo eFantini; Nicola eCiocchini; Daniele eIelmini; Valerio eMilo; Stefano eAmbrogio Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses published pages: , ISSN: 1662-453X, DOI: 10.3389/fnins.2016.00056 |
Frontiers in Neuroscience, Vol 10 (2016) 1 | 2019-06-06 |
| 2018 |
Daniele Ielmini, H.-S. Philip Wong In-memory computing with resistive switching devices published pages: 333-343, ISSN: 2520-1131, DOI: 10.1038/s41928-018-0092-2 |
Nature Electronics 1/6 | 2019-04-03 |
| 2018 |
Yanyun Ren, Valerio Milo, Zhongqiang Wang, Haiyang Xu, Daniele Ielmini, Xiaoning Zhao, Yichun Liu Analytical Modeling of Organic-Inorganic CH 3 NH 3 PbI 3 Perovskite Resistive Switching and its Application for Neuromorphic Recognition published pages: 1700035, ISSN: 2513-0390, DOI: 10.1002/adts.201700035 |
Advanced Theory and Simulations 1/4 | 2019-04-03 |
| 2018 |
Zhong Sun, Elia Ambrosi, Alessandro Bricalli, Daniele Ielmini Logic Computing with Stateful Neural Networks of Resistive Switches published pages: 1802554, ISSN: 0935-9648, DOI: 10.1002/adma.201802554 |
Advanced Materials 30/38 | 2019-04-03 |
| 2018 |
Ming Wang, Wei Wang, Wan Ru Leow, Changjin Wan, Geng Chen, Yi Zeng, Jiancan Yu, Yaqing Liu, Pingqiang Cai, Hong Wang, Daniele Ielmini, Xiaodong Chen Enhancing the Matrix Addressing of Flexible Sensory Arrays by a Highly Nonlinear Threshold Switch published pages: 1802516, ISSN: 0935-9648, DOI: 10.1002/adma.201802516 |
Advanced Materials 30/33 | 2019-04-03 |
| 2018 |
Wei Wang, Giacomo Pedretti, Valerio Milo, Roberto Carboni, Alessandro Calderoni, Nirmal Ramaswamy, Alessandro S. Spinelli, Daniele Ielmini Learning of spatiotemporal patterns in a spiking neural network with resistive switching synapses published pages: eaat4752, ISSN: 2375-2548, DOI: 10.1126/sciadv.aat4752 |
Science Advances 4/9 | 2019-04-03 |
| 2018 |
Wei Wang, Giacomo Pedretti, Valerio Milo, Roberto Carboni, Alessandro Calderoni, Nirmal Ramaswamy, Alessandro Spinelli, Daniele Ielmini Computing of Temporal Information in Spiking Neural Networks with ReRAM Synapses published pages: , ISSN: 1359-6640, DOI: 10.1039/C8FD00097B |
Faraday Discussions | 2019-04-03 |
| 2018 |
Daniele Ielmini Electrical Transport in crystalline and amorphous chalcogenide published pages: , ISSN: , DOI: |
Phase Change Memory: Device Physics, Reliability and Applications | 2019-04-03 |
| 2018 |
Roberto Carboni, Stefano Ambrogio, Wei Chen, Manzar Siddik, Jon Harms, Andy Lyle, Witold Kula, Gurtej Sandhu, Daniele Ielmini Modeling of Breakdown-Limited Endurance in Spin-Transfer Torque Magnetic Memory Under Pulsed Cycling Regime published pages: 2470-2478, ISSN: 0018-9383, DOI: 10.1109/TED.2018.2822343 |
IEEE Transactions on Electron Devices 65/6 | 2019-04-03 |
| 2018 |
Adnan Mehonic, Alexander L. Shluger, David Gao, Ilia Valov, Enrique Miranda, Daniele Ielmini, Alessandro Bricalli, Elia Ambrosi, Can Li, J. Joshua Yang, Qiangfei Xia, Anthony J. Kenyon Silicon Oxide (SiO x ): A Promising Material for Resistance Switching? published pages: 1801187, ISSN: 0935-9648, DOI: 10.1002/adma.201801187 |
Advanced Materials | 2019-04-03 |
| 2018 |
Valerio Milo, Giacomo Pedretti, Roberto Carboni, Alessandro Calderoni, Nirmal Ramaswamy, Stefano Ambrogio, Daniele Ielmini A 4-Transistors/1-Resistor Hybrid Synapse Based on Resistive Switching Memory (RRAM) Capable of Spike-Rate-Dependent Plasticity (SRDP) published pages: 1-10, ISSN: 1063-8210, DOI: 10.1109/TVLSI.2018.2818978 |
IEEE Transactions on Very Large Scale Integration (VLSI) Systems | 2019-04-03 |
| 2018 |
Roberto Carboni, Wei Chen, Manzar Siddik, Jon Harms, Andy Lyle, Witold Kula, Gurtej Sandhu, Daniele Ielmini Random Number Generation by Differential Read of Stochastic Switching in Spin-Transfer Torque Memory published pages: 951-954, ISSN: 0741-3106, DOI: 10.1109/LED.2018.2833543 |
IEEE Electron Device Letters 39/7 | 2019-04-03 |
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