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InRel-NPower SIGNED

Innovative Reliable Nitride based Power Devices and Applications

Total Cost €

EC-Contrib. €

Partnership

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Outcomes and
results

InRel-NPower project word cloud

Explore the words cloud of the InRel-NPower project. It provides you a very rough idea of what is the project "InRel-NPower" about.

tap 10kw hemt phenomena gan drawbacks special view exploration medium power device blocking capability item switching strategy environment applicability market whereby reliability innovative dislocations nitride inverter till demonstrated form normally full lateral structures removal contains vertical subjects inside quality hence brings inductance combination substrate electronics off usability qualification fast material overcome structural dual disturbances limitations aluminum thoroughly robustness spread trapping packaging energy leakage industrial layout tested gate benefits automotive largely breakdown silicon architecture channel saving al materials adoption mode realized hemts si

Project "InRel-NPower" data sheet

The following table provides information about the project.

Coordinator	UNIVERSITA DEGLI STUDI DI PADOVA Organization address address: VIA 8 FEBBRAIO 2 city: PADOVA postcode: 35122 website: www.unipd.it contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.
Coordinator Country	Italy [IT]
Project website	http://www.inrel-npower.eu/
Total cost	7˙691˙466 €
EC max contribution	7˙190˙000 € (93%)
Programme	1. H2020-EU.2.1.3. (INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Advanced materials)
Code Call	H2020-NMBP-2016-two-stage
Funding Scheme	RIA
Starting year	2017
Duration (year-month-day)	from 2017-01-01 to 2020-06-30

Partnership

Take a look of project's partnership.

#	participants	country	role	EC contrib. [€]
1	UNIVERSITA DEGLI STUDI DI PADOVA UNIVERSITA DEGLI STUDI DI PADOVA Organization address address: VIA 8 FEBBRAIO 2 city: PADOVA postcode: 35122 website: www.unipd.it contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	IT (PADOVA)	coordinator	650˙000.00
2	ON SEMICONDUCTOR BELGIUM BVBA ON SEMICONDUCTOR BELGIUM BVBA Organization address address: WESTERRING 15 city: OUDENAARDE postcode: 9700 website: www.onsemi.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	BE (OUDENAARDE)	participant	1˙825˙271.00
3	ROBERT BOSCH GMBH ROBERT BOSCH GMBH Organization address address: ROBERT-BOSCH-PLATZ 1 city: GERLINGEN-SCHILLERHOEHE postcode: 70839 website: www.bosch.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (GERLINGEN-SCHILLERHOEHE)	participant	950˙000.00
4	SIEMENS AKTIENGESELLSCHAFT SIEMENS AKTIENGESELLSCHAFT Organization address address: WERNER-VON-SIEMENS-STR. 1 city: MUNCHEN postcode: 80333 website: www.siemens.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (MUNCHEN)	participant	750˙000.00
5	EPIGAN NV EPIGAN NV Organization address address: Kempische Steenweg 293 city: Hasselt postcode: 3500 website: www.epigan.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	BE (Hasselt)	participant	744˙980.00
6	CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS Organization address address: RUE MICHEL ANGE 3 city: PARIS postcode: 75794 website: www.cnrs.fr contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	FR (PARIS)	participant	636˙083.00
7	FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. Organization address address: HANSASTRASSE 27C city: MUNCHEN postcode: 80686 website: www.fraunhofer.de contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (MUNCHEN)	participant	626˙165.00
8	UNIVERSITEIT GENT UNIVERSITEIT GENT Organization address address: SINT PIETERSNIEUWSTRAAT 25 city: GENT postcode: 9000 website: http://www.ugent.be contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	BE (GENT)	participant	505˙000.00
9	CONSTRUCTIONS ELECTRONIQUES + TELECOMMUNICATIONS CONSTRUCTIONS ELECTRONIQUES + TELECOMMUNICATIONS Organization address address: RUE DU CHARBONNAGE 12 city: LIEGE postcode: 4020 website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	BE (LIEGE)	participant	502˙500.00
10	NATIONAL UNIVERSITY CORPORATION KYUSHU UNIVERSITY NATIONAL UNIVERSITY CORPORATION KYUSHU UNIVERSITY Organization address address: 744 MOTOOKA, NISHI-KU city: FUKUOKA postcode: 819 0395 website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	JP (FUKUOKA)	participant	0.00
11	NATIONAL UNIVERSITY CORPORATION MIE UNIVERSITY NATIONAL UNIVERSITY CORPORATION MIE UNIVERSITY Organization address address: 1577 KURIMA MACHIYA CHO city: TSU MIE postcode: 514 8570 website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	JP (TSU MIE)	participant	0.00

Map

Project objective

The main objective of this proposal is to develop reliable GaN-based power devices and systems for high and medium power electronics targeting industrial and automotive applications and bringing the GaN power devices another step towards the wide usability in the energy saving environment to further tap the full potential which this new material brings along. This proposal addresses two subjects, one of which is medium power (till 10kW) GaN-on-Si based lateral HEMT structures (Normally OFF devices), with special focus on high reliability, which is still a major blocking item to allow wide-spread market adoption. Hence, the impact of the GaN material quality, in combination with the device layout in view of long-term reliability will be addressed. The project aims an in-depth reliability study and qualification strategy development whereby the study of the impact of dislocations and other structural disturbances inside the materials on the long term device reliability will be specifically addressed. In addition, this proposal aims to demonstrate new device concepts with increased robustness and reliability, which will be realized, evaluated and tested thoroughly. This will demonstrate how it is possible to overcome the known limitations of the GaN on Silicon technology, like e.g. the vertical leakage, trapping phenomena and/or breakdown of lateral HEMTs and the p-GaN gate related reliability issues. The current proposal also contains the development of novel device architecture (dual channel, substrate removal, e-mode), as well as the exploration of new material systems (Aluminum Nitride (Al-based) devices) which can also largely contribute to overcome drawbacks of the GaN on Si technology. The applicability of the novel GaN-on-Si concepts in form of an industrial inverter will be demonstrated finally, with the development of an innovative low inductance packaging system for power devices, making full benefits of the fast switching capability of GaN-based power devices.

Deliverables

List of deliverables.
Web site	Websites, patent fillings, videos etc.	2019-10-03 19:25:43

Take a look to the deliverables list in detail: detailed list of InRel-NPower deliverables.

Publications

List of publications.
year	authors and title	journal	last update
2017	Pawel Kempisty, Yoshihiro Kangawa, Akira Kusaba, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, Hiroshi Amano DFT modeling of carbon incorporation in GaN(0001) and GaN(0001Â¯) metalorganic vapor phase epitaxy published pages: 141602, ISSN: 0003-6951, DOI: 10.1063/1.4991608	Applied Physics Letters 111/14	2019-10-03
2018	Ezgi Dogmus, Malek Zegaoui, Farid Medjdoub GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap published pages: 34102, ISSN: 1882-0778, DOI: 10.7567/apex.11.034102	Applied Physics Express 11/3	2019-10-03
2018	Matteo Meneghini, Alaleh Tajalli, Peter Moens, Abhishek Banerjee, Enrico Zanoni, Gaudenzio Meneghesso Trapping phenomena and degradation mechanisms in GaN-based power HEMTs published pages: 118-126, ISSN: 1369-8001, DOI: 10.1016/j.mssp.2017.10.009	Materials Science in Semiconductor Processing 78	2019-10-03
2017	Akira Kusaba, Guanchen Li, Michael von Spakovsky, Yoshihiro Kangawa, Koichi Kakimoto Modeling the Non-Equilibrium Process of the Chemical Adsorption of Ammonia on GaN(0001) Reconstructed Surfaces Based on Steepest-Entropy-Ascent Quantum Thermodynamics published pages: 948, ISSN: 1996-1944, DOI: 10.3390/ma10080948	Materials 10/8	2019-10-03
2017	I. Rossetto, M. Meneghini, A. Tajalli, S. Dalcanale, C. De Santi, P. Moens, A. Banerjee, E. Zanoni, G. Meneghesso Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs published pages: 3734-3739, ISSN: 0018-9383, DOI: 10.1109/TED.2017.2728785	IEEE Transactions on Electron Devices 64/9	2019-10-03

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