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SiLAS SIGNED

SiliconLaser

Total Cost €

EC-Contrib. €

Partnership

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Outcomes and
results

SiLAS project word cloud

Explore the words cloud of the SiLAS project. It provides you a very rough idea of what is the project "SiLAS" about.

grow integration holy emission followed exactly 1800 coinciding transforming composition speed bandgap hexagonal photonic direct consumption tunable crystal calculations free nm predict nanolaser our 1380 semiconductor integrating grail silicon light defect significantly communication serve communications industry theoretical efficient sixge1 adding chip fibre game hex changer sige optical energy platform electronics revolutionize electronic demonstration window functionalities cubic cmos add

Project "SiLAS" data sheet

The following table provides information about the project.

Coordinator	TECHNISCHE UNIVERSITEIT EINDHOVEN Organization address address: GROENE LOPER 3 city: EINDHOVEN postcode: 5612 AE website: www.tue.nl/en contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.
Coordinator Country	Netherlands [NL]
Project website	http://www.silasproject.eu
Total cost	3˙985˙418 €
EC max contribution	3˙985˙417 € (100%)
Programme	1. H2020-EU.1.2.1. (FET Open)
Code Call	H2020-FETOPEN-1-2016-2017
Funding Scheme	RIA
Starting year	2017
Duration (year-month-day)	from 2017-01-01 to 2020-12-31

Partnership

Take a look of project's partnership.

#	participants	country	role	EC contrib. [€]
1	TECHNISCHE UNIVERSITEIT EINDHOVEN TECHNISCHE UNIVERSITEIT EINDHOVEN Organization address address: GROENE LOPER 3 city: EINDHOVEN postcode: 5612 AE website: www.tue.nl/en contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	NL (EINDHOVEN)	coordinator	1˙286˙716.00
2	IBM RESEARCH GMBH IBM RESEARCH GMBH Organization address address: SAEUMERSTRASSE 4 city: RUESCHLIKON postcode: 8803 website: www.zurich.ibm.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	CH (RUESCHLIKON)	participant	707˙125.00
3	THE CHANCELLOR, MASTERS AND SCHOLARS OF THE UNIVERSITY OF OXFORD THE CHANCELLOR, MASTERS AND SCHOLARS OF THE UNIVERSITY OF OXFORD Organization address address: WELLINGTON SQUARE UNIVERSITY OFFICES city: OXFORD postcode: OX1 2JD website: www.ox.ac.uk contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	UK (OXFORD)	participant	633˙126.00
4	TECHNISCHE UNIVERSITAET MUENCHEN TECHNISCHE UNIVERSITAET MUENCHEN Organization address address: Arcisstrasse 21 city: MUENCHEN postcode: 80333 website: www.tu-muenchen.de contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (MUENCHEN)	participant	592˙363.00
5	FRIEDRICH-SCHILLER-UNIVERSITAT JENA FRIEDRICH-SCHILLER-UNIVERSITAT JENA Organization address address: FURSTENGRABEN 1 city: JENA postcode: 7743 website: www.uni-jena.de contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (JENA)	participant	417˙500.00
6	UNIVERSITAT LINZ UNIVERSITAT LINZ Organization address address: ALTENBERGER STRASSE 69 city: LINZ postcode: 4040 website: www.jku.at contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	AT (LINZ)	participant	348˙587.00

Map

Project objective

Our research aims to revolutionize the electronics industry by adding intra-chip and chip-to-chip communication at the speed of light, offering a significantly reduced energy consumption. Cubic crystal phase SiGe is known to be great for electronics. We propose to develop hexagonal crystal phase SiGe (Hex-SiGe) which features a direct bandgap and will add photonic capabilities to electronics. Direct bandgap silicon has been the holy grail of the semiconductor industry for many years, since it would allow integrating both electronic and optical functionalities on a silicon platform. Recent theoretical calculations predict that hexagonal crystal phase SixGe1-x features a tunable direct bandgap from 1380-1800 nm, exactly coinciding with the low loss window for optical fibre communications. We have recently developed a generic approach to grow defect-free hexagonal SixGe1-x with tunable composition. We propose to demonstrate efficient light emission from direct bandgap SiGe, followed by the development of a SiGe nanolaser. Work towards CMOS integration is included. The demonstration of a Hex-SiGe nanolaser will serve as a game-changer for transforming the electronics industry.

Deliverables

List of deliverables.
Surface passivation	Documents, reports	2020-01-20 16:19:05
Recruitment of researchers	Other	2020-01-20 16:19:05
WZ substrates	Documents, reports	2020-01-20 16:19:05
Strain dependent PL, TeraHertz	Documents, reports	2020-01-20 16:19:05
Technical action check meeting	Documents, reports	2020-01-20 16:19:05
Verification direct bandgap	Documents, reports	2020-01-20 16:19:05
Scientific action check meeting 1	Documents, reports	2020-01-20 16:19:05
Synthesis of Hex-SiGe	Documents, reports	2020-01-20 16:19:05
Annual technical Report	Documents, reports	2020-01-20 16:19:05
Terahertz conductivity	Documents, reports	2020-01-20 16:19:05
Deliverable website	Websites, patent fillings, videos etc.	2020-01-20 16:19:05
Lattice parameters	Documents, reports	2020-01-20 16:19:05
Theory	Documents, reports	2020-01-20 16:19:05

Take a look to the deliverables list in detail: detailed list of SiLAS deliverables.

Publications

List of publications.
year	authors and title	journal	last update
2020	Elham M. T. Fadaly, Alain Dijkstra, Jens RenÃ¨ Suckert, Dorian Ziss, Marvin A. J. van Tilburg, Chenyang Mao, Yizhen Ren, Victor T. van Lange, Ksenia Korzun, Sebastian KÃ¶lling, Marcel A. Verheijen, David Busse, Claudia RÃ¶dl, JÃ¼rgen FurthmÃ¼ller, Friedhelm Bechstedt, Julian Stangl, Jonathan J. Finley, Silvana Botti, Jos E. M. Haverkort, Erik P. A. M. Bakkers Direct-bandgap emission from hexagonal Ge and SiGe alloys published pages: 205-209, ISSN: 0028-0836, DOI: 10.1038/s41586-020-2150-y	Nature 580/7802	2020-04-15
2019	Philipp Staudinger, Kirsten E. Moselund, Heinz Schmid Exploring the Size Limitations of Wurtzite IIIâ€“V Film Growth published pages: 686-693, ISSN: 1530-6984, DOI: 10.1021/acs.nanolett.9b04507	Nano Letters 20/1	2020-02-13
2018	Christopher L. Davies, Jay B. Patel, Chelsea Q. Xia, Laura M. Herz, Michael B. Johnston Temperature-Dependent Refractive Index of Quartz at Terahertz Frequencies published pages: 1236-1248, ISSN: 1866-6892, DOI: 10.1007/s10762-018-0538-7	Journal of Infrared, Millimeter, and Terahertz Waves 39/12	2020-02-13
2019	Claudia RÃ¶dl, JÃ¼rgen FurthmÃ¼ller, Jens RenÃ¨ Suckert, Valerio Armuzza, Friedhelm Bechstedt, Silvana Botti Accurate electronic and optical properties of hexagonal germanium for optoelectronic applications published pages: 34602, ISSN: 2475-9953, DOI: 10.1103/physrevmaterials.3.034602	Physical Review Materials 3/3	2020-01-20
2019	Abderrezak Belabbes, Friedhelm Bechstedt Forbidden Band-Edge Excitons of Wurtzite-GaP: A Theoretical View published pages: 1800238, ISSN: 0370-1972, DOI: 10.1002/pssb.201800238	physica status solidi (b) 256/2	2020-01-20
2018	Philipp Staudinger, Svenja Mauthe, Kirsten E. Moselund, Heinz Schmid Concurrent Zinc-Blende and Wurtzite Film Formation by Selection of Confined Growth Planes published pages: 7856-7862, ISSN: 1530-6984, DOI: 10.1021/acs.nanolett.8b03632	Nano Letters 18/12	2020-01-20

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The information about "SILAS" are provided by the European Opendata Portal: CORDIS opendata.