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Valleys SIGNED

Valley and spin devices based on two-dimensional semiconductors

Total Cost €

EC-Contrib. €

Partnership

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Outcomes and
results

Valleys project word cloud

Explore the words cloud of the Valleys project. It provides you a very rough idea of what is the project "Valleys" about.

mechanisms detection manipulating explore structure central amplifiers valleytronic gap dichalcogenide lengths realizing types band optical relaxation give excitation family metal materials difficult injection interconnects valley interchangeably device freedom chip degree transition degrees bulky electric graphene spin electronic semiconductors diodes protecting dimensional realize analogous direct mechanism realized architectures

Project "Valleys" data sheet

The following table provides information about the project.

Coordinator	ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE Organization address address: BATIMENT CE 3316 STATION 1 city: LAUSANNE postcode: 1015 website: www.epfl.ch contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.
Coordinator Country	Switzerland [CH]
Total cost	1˙998˙060 €
EC max contribution	1˙998˙060 € (100%)
Programme	1. H2020-EU.1.1. (EXCELLENT SCIENCE - European Research Council (ERC))
Code Call	ERC-2015-CoG
Funding Scheme	ERC-COG
Starting year	2016
Duration (year-month-day)	from 2016-07-01 to 2021-06-30

Partnership

Take a look of project's partnership.

#	participants	country	role	EC contrib. [€]
1	ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE Organization address address: BATIMENT CE 3316 STATION 1 city: LAUSANNE postcode: 1015 website: www.epfl.ch contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	CH (LAUSANNE)	coordinator	1˙998˙060.00

Map

Project objective

The main objective of this research proposal is to realize new types of electronic devices based on the valley/spin degree of freedom in two-dimensional semiconductors from the transition metal dichalcogenide family. These materials are analogous to graphene but have a direct band gap. Together with the unique band structure, this allows manipulating the spin and valley degrees of freedom interchangeably. In addition, it can give rise to a mechanism for protecting the spin which could in future result in very high spin relaxation lengths. This proposal will explore various spin/valley injection mechanisms as well as detection mechanisms with the goal of realizing an all-electric valleytronic device with no need of optical excitation which is bulky and difficult to scale and implement on chip scale. Various new device architectures such as valley interconnects, amplifiers and diodes will be realized in the central part of the proposal.

Publications

List of publications.
year	authors and title	journal	last update
2019	Ahmet Avsar, Alberto Ciarrocchi, Michele Pizzochero, Dmitrii Unuchek, Oleg V. Yazyev, Andras Kis Defect induced, layer-modulated magnetism in ultrathin metallic PtSe2 published pages: 674-678, ISSN: 1748-3387, DOI: 10.1038/s41565-019-0467-1	Nature Nanotechnology 14/7	2019-08-29
2019	Juan Francisco Gonzalez Marin, Dmitrii Unuchek, Kenji Watanabe, Takashi Taniguchi, Andras Kis MoS2 photodetectors integrated with photonic circuits published pages: , ISSN: 2397-7132, DOI: 10.1038/s41699-019-0096-4	npj 2D Materials and Applications 3/1	2019-08-29
2017	Kolyo Marinov, Ahmet Avsar, Kenji Watanabe, Takashi Taniguchi, Andras Kis Resolving the spin splitting in the conduction band of monolayer MoS2 published pages: , ISSN: 2041-1723, DOI: 10.1038/s41467-017-02047-5	Nature Communications 8/1	2019-06-18
2017	Ahmet Avsar, Dmitrii Unuchek, Jiawei Liu, Oriol Lopez Sanchez, Kenji Watanabe, Takashi Taniguchi, Barbaros Ã–zyilmaz, Andras Kis Optospintronics in Graphene via Proximity Coupling published pages: 11678-11686, ISSN: 1936-0851, DOI: 10.1021/acsnano.7b06800	ACS Nano 11/11	2019-06-18
2018	Ming-Wei Chen, HoKwon Kim, Dmitry Ovchinnikov, Agnieszka Kuc, Thomas Heine, Olivier Renault, Andras Kis Large-grain MBE-grown GaSe on GaAs with a Mexican hat-like valence band dispersion published pages: , ISSN: 2397-7132, DOI: 10.1038/s41699-017-0047-x	npj 2D Materials and Applications 2/1	2019-06-18
2016	Oriol Lopez Sanchez, Dmitry Ovchinnikov, Shikhar Misra, Adrien Allain, Andras Kis Valley Polarization by Spin Injection in a Light-Emitting van der Waals Heterojunction published pages: 5792-5797, ISSN: 1530-6984, DOI: 10.1021/acs.nanolett.6b02527	Nano Letters 16/9	2019-06-18
2018	Ahmet Avsar, Kolyo Marinov, Enrique Gonzalez Marin, Giuseppe Iannaccone, Kenji Watanabe, Takashi Taniguchi, Gianluca Fiori, Andras Kis Reconfigurable Diodes Based on Vertical WSe 2 Transistors with van der Waals Bonded Contacts published pages: 1707200, ISSN: 0935-9648, DOI: 10.1002/adma.201707200	Advanced Materials 30/18	2019-03-27
2019	Alberto Ciarrocchi, Dmitrii Unuchek, Ahmet Avsar, Kenji Watanabe, Takashi Taniguchi, Andras Kis Polarization switching and electrical control of interlayer excitons in two-dimensional van der Waals heterostructures published pages: 131-136, ISSN: 1749-4885, DOI: 10.1038/s41566-018-0325-y	Nature Photonics 13/2	2019-03-27
2018	Dmitrii Unuchek, Alberto Ciarrocchi, Ahmet Avsar, Kenji Watanabe, Takashi Taniguchi, Andras Kis Room-temperature electrical control of exciton flux in a van der Waals heterostructure published pages: 340-344, ISSN: 0028-0836, DOI: 10.1038/s41586-018-0357-y	Nature 560/7718	2019-03-27
2018	Alberto Ciarrocchi, Ahmet Avsar, Dmitry Ovchinnikov, Andras Kis Thickness-modulated metal-to-semiconductor transformation in a transition metal dichalcogenide published pages: , ISSN: 2041-1723, DOI: 10.1038/s41467-018-03436-0	Nature Communications 9/1	2019-03-27

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