Explore the words cloud of the PICTURE project. It provides you a very rough idea of what is the project "PICTURE" about.
The following table provides information about the project.
Coordinator |
III-V LAB
Organization address contact info |
Coordinator Country | France [FR] |
Project website | http://www.picture-h2020.eu/ |
Total cost | 4˙050˙477 € |
EC max contribution | 3˙924˙532 € (97%) |
Programme |
1. H2020-EU.2.1.1. (INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT)) |
Code Call | H2020-ICT-2017-1 |
Funding Scheme | RIA |
Starting year | 2018 |
Duration (year-month-day) | from 2018-01-01 to 2020-12-31 |
Take a look of project's partnership.
# | ||||
---|---|---|---|---|
1 | III-V LAB | FR (PALAISEAU CEDEX) | coordinator | 793˙617.00 |
2 | COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES | FR (PARIS 15) | participant | 880˙093.00 |
3 | UNIVERSITY OF SOUTHAMPTON | UK (SOUTHAMPTON) | participant | 586˙666.00 |
4 | INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM | BE (LEUVEN) | participant | 379˙687.00 |
5 | UNIVERSITY COLLEGE LONDON | UK (LONDON) | participant | 369˙287.00 |
6 | UNIVERSITY COLLEGE CORK - NATIONAL UNIVERSITY OF IRELAND, CORK | IE (Cork) | participant | 325˙145.00 |
7 | ARGOTECH AS | CZ (NACHOD) | participant | 297˙255.00 |
8 | NOKIA BELL LABS FRANCE | FR (NOZAY) | participant | 292˙780.00 |
The objective of PICTURE project is to develop a photonic integration technology by bonding multi-III-V-dies of different epitaxial stacks to SOI wafers with a thinner and uniform dielectric bonding layer. This heterogeneous integration platform will enable higher performance lasers and photo-detectors using the optimized III-V dies. In addition, the thinner bonding layer will lead to record performance MOSCAP III-V/Si modulators, and to a new generation of wavelength tunable distributed feedback lasers. Moreover the full process including SOI process, bonding, III-V and back-end process will be made on a 200mm R&D CMOS line, leading to higher yield, smaller footprint and lower cost PICs. Two types of PICs with a total capacity of 400Gb/s will be developed, packaged and validated in system configuration. In parallel, PICTURE project will develop direct growth of high performance quantum-dot lasers and selective area growth on bonded templates for high density future generation of PICs. The project is coordinated by III-V Lab, and includes University of Southampton, CEA, University College London, Imec, Tyndall, Argotech and Nokia Bell Labs. The consortium is highly complementary, covering all skills required to achieve the project objectives: growth of semiconductor materials, silicon process and III-V process, design and characterization of PICs, prototyping and assessment of PICs in high bit rate digital communication systems: Apart from the adequacy of the consortium to achieve collectively the project objectives, the consortium partners have the potential to set up a comprehensive supply chain for the future exploitation of the project results, either by exploiting the results “in house” or by setting up suitable partnerships.
First press release on PICTURE project | Documents, reports | 2019-10-29 14:24:53 |
Take a look to the deliverables list in detail: detailed list of PICTURE deliverables.
year | authors and title | journal | last update |
---|---|---|---|
2019 |
Claire Besancon, Jean Decobert, Jean-Pierre Le Goec, Nicolas Vaissiere, Cécilia Dupré, Viviane Muffato, Frank Fournel, Christophe Jany, Franck Bassani, Sylvain David and Thierry Baron High-quality Epitaxial Growth of AlGaInAs-based Active Structure on a Directly-Bonded InPoSi Substrate published pages: , ISSN: , DOI: |
Proceedings of Compound Semiconductor Week 2019 Yearly | 2019-09-05 |
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The information about "PICTURE" are provided by the European Opendata Portal: CORDIS opendata.