Explore the words cloud of the WAKeMeUP project. It provides you a very rough idea of what is the project "WAKeMeUP" about.
The following table provides information about the project.
Coordinator |
STMICROELECTRONICS CROLLES 2 SAS
Organization address contact info |
Coordinator Country | France [FR] |
Project website | http://www.wakemeup-ecsel.eu/ |
Total cost | 96˙689˙472 € |
EC max contribution | 24˙440˙978 € (25%) |
Programme |
1. H2020-EU.2.1.1.7. (ECSEL) |
Code Call | H2020-ECSEL-2017-1-IA-two-stage |
Funding Scheme | ECSEL-IA |
Starting year | 2018 |
Duration (year-month-day) | from 2018-05-01 to 2021-04-30 |
Take a look of project's partnership.
The WAKEMEUP project objective is to set-up a pilot line for advanced microcontrollers with embedded non-volatile memory, design and manufacturing for the prototyping of innovative applications for the smart mobility and smart society domains. The already defined microcontrollers with 40nm embedded flash technology will be consolidated to build a solid manufacturing platform. Additional developments will be performed for the integration of memory, power management, connectivity, hard security on the same chip. The project will also target the industrialization of the embedded Phase Change Memory (PCM) technology built on top of the FDSOI 28nm logic process pilot line. The development of the ePCM will be driven by the final application requirements as well as decreasing the power consumption. The alternative memory solutions will be also studied as they have different - and complementary - traits in such areas as read/write speed, power and energy consumption, retention and endurance, and device density and benchmarked with the ePCM and the conventional eFlash. Continued advances in materials, device physics, architectures and design could further reduce the energy consumption of these memories. To achieve this goal of generating high value added semiconductor circuits in Europe in a breakthrough leading edge technology the project will deploy all the necessary activities to bring a new technology to an early industrial maturity stage. These activities encompass such developments as: technology enhancements for various specific application requirements such as wide temperature range and reliability, high security requests, high flexibility…, design enablment allowing first time silicon success, prototyping demonstrator products in the different application areas. In the WAKEMEUP project, new devices and systems will be developed by the application partners in automotive and secure based on FD-SOI and embedded digital technology to answer specific applications needs.
year | authors and title | journal | last update |
---|---|---|---|
2019 |
Stefan Petzold, S. U. Sharath, Jonas Lemke, Erwin Hildebrandt, Christina Trautmann, Lambert Alff Heavy Ion Radiation Effects on Hafnium Oxide-Based Resistive Random Access Memory published pages: 1715-1718, ISSN: 0018-9499, DOI: 10.1109/tns.2019.2908637 |
IEEE Transactions on Nuclear Science 66/7 | 2020-04-25 |
2019 |
Marta Pedró, Javier MartÃn-MartÃnez, Marcos Maestro-Izquierdo, Rosana RodrÃguez, Montserrat NafrÃa Self-Organizing Neural Networks Based on OxRAM Devices under a Fully Unsupervised Training Scheme published pages: 3482, ISSN: 1996-1944, DOI: 10.3390/ma12213482 |
Materials 12/21 | 2020-04-25 |
2019 |
AgustÃn Cisternas Ferri, Alan Rapoport, Pablo I. Fierens, German A. Patterson, Enrique Miranda, Jordi Suñé On the Application of a Diffusive Memristor Compact Model to Neuromorphic Circuits published pages: 2260, ISSN: 1996-1944, DOI: 10.3390/ma12142260 |
Materials 12/14 | 2020-04-25 |
2019 |
Stefan Petzold, Eszter Piros, S U Sharath, Alexander Zintler, Erwin Hildebrandt, Leopoldo Molina-Luna, Christian Wenger, Lambert Alff Gradual reset and set characteristics in yttrium oxide based resistive random access memory published pages: 75008, ISSN: 0268-1242, DOI: 10.1088/1361-6641/ab220f |
Semiconductor Science and Technology 34/7 | 2020-04-25 |
2018 |
A. Rodriguez-Fernandez, C. Cagli, J. Sune, E. Miranda Switching Voltage and Time Statistics of Filamentary Conductive Paths in HfO 2 -Based ReRAM Devices published pages: 656-659, ISSN: 0741-3106, DOI: 10.1109/led.2018.2822047 |
IEEE Electron Device Letters 39/5 | 2020-04-25 |
2019 |
Andrea N. D. Kolb, Nicolas Bernier, Eric Robin, Anass Benayad, Jean-Luc Rouvière, Chiara Sabbione, Françoise Hippert, Pierre Noé Understanding the Crystallization Behavior of Surface-Oxidized GeTe Thin Films for Phase-Change Memory Application published pages: 701-710, ISSN: 2637-6113, DOI: 10.1021/acsaelm.9b00070 |
ACS Applied Electronic Materials 1/5 | 2020-04-25 |
2018 |
Philippe Kowalczyk, Françoise Hippert, Nicolas Bernier, Cristian Mocuta, Chiara Sabbione, Walter Batista-Pessoa, Pierre Noé Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb 2 Te 3 Superlattices Used in Interfacial Phase-Change Memory (iPCM) Devices published pages: 1704514, ISSN: 1613-6810, DOI: 10.1002/smll.201704514 |
Small 14/24 | 2020-04-25 |
2019 |
Alexandre Levisse, Pierre-Emmanuel Gaillardon, Bastien Giraud, Ian O\'Connor, Jean-Philippe Noel, Mathieu Moreau, Jean-Michel Portal Resistive Switching Memory Architecture Based on Polarity Controllable Selectors published pages: 183-194, ISSN: 1536-125X, DOI: 10.1109/tnano.2018.2887140 |
IEEE Transactions on Nanotechnology 18 | 2020-04-25 |
2019 |
Gilbert Sassine, Cécile Nail, Philippe Blaise, Benoit Sklenard, Mathieu Bernard, Rémy Gassilloud, Aurélie Marty, Marc Veillerot, Christophe Vallée, Etienne Nowak, Gabriel Molas Hybrid-RRAM toward Next Generation of Nonvolatile Memory: Coupling of Oxygen Vacancies and Metal Ions published pages: 1800658, ISSN: 2199-160X, DOI: 10.1002/aelm.201800658 |
Advanced Electronic Materials 5/2 | 2020-04-25 |
2018 |
A. Rodriguez-Fernandez, C. Cagli, L. Perniola, E. Miranda, J. Suñé Characterization of HfO 2 -based devices with indication of second order memristor effects published pages: 101-106, ISSN: 0167-9317, DOI: 10.1016/j.mee.2018.04.006 |
Microelectronic Engineering 195 | 2020-04-25 |
2018 |
Gilbert Sassine, Carlo Cagli, Jean-Francois Nodin, Gabriel Molas, Etienne Nowak Novel Computing Method for Short Programming Time and Low Energy Consumption in HfO 2 Based RRAM Arrays published pages: 696-702, ISSN: 2168-6734, DOI: 10.1109/JEDS.2018.2830999 |
IEEE Journal of the Electron Devices Society 6 | 2020-04-25 |
2018 |
Corentin Pigot, Marc Bocquet, Fabien Gilibert, Marina Reyboz, Olga Cueto, Vincenzo Della Marca, Paola Zuliani, Jean-Michel Portal Comprehensive Phase-Change Memory Compact Model for Circuit Simulation published pages: 4282-4289, ISSN: 0018-9383, DOI: 10.1109/TED.2018.2862155 |
IEEE Transactions on Electron Devices 65/10 | 2020-04-25 |
2018 |
A. Rodriguez-Fernandez, J. Muñoz-Gorriz, J. Suñé, E. Miranda A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory published pages: 142-146, ISSN: 0026-2714, DOI: 10.1016/j.microrel.2018.06.120 |
Microelectronics Reliability 88-90 | 2020-04-25 |
2018 |
Gabriel Molas, Gilbert Sassine, Cecile Nail, Diego Alfaro Robayo, Jean-François Nodin, Carlo Cagli, Jean Coignus, Philippe Blaise, Etienne Nowak (Invited) Resistive Memories (RRAM) Variability: Challenges and Solutions published pages: 35-47, ISSN: 1938-5862, DOI: 10.1149/08603.0035ecst |
ECS Transactions 86/3 | 2020-04-25 |
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The information about "WAKEMEUP" are provided by the European Opendata Portal: CORDIS opendata.