SITOGA

Silicon CMOS compatible transition metal oxide technology for boosting highly integrated photonic devices with disruptive performance

 Coordinatore UNIVERSITAT POLITECNICA DE VALENCIA 

 Organization address address: Camino de Vera. Building 6G (CTT)
city: Valencia

contact info
Titolo: Mr.
Nome: Andrés
Cognome: Moratal Roselló
Email: send email
Telefono: +34 963877409
Fax: +34 963877949

 Nazionalità Coordinatore Spain [ES]
 Totale costo 4˙233˙541 €
 EC contributo 2˙940˙000 €
 Programma FP7-ICT
Specific Programme "Cooperation": Information and communication technologies
 Code Call FP7-ICT-2013-11
 Funding Scheme CP
 Anno di inizio 2013
 Periodo (anno-mese-giorno) 2013-12-01   -   2016-11-30

 Partecipanti

# participant  country  role  EC contrib. [€] 
1    UNIVERSITAT POLITECNICA DE VALENCIA

 Organization address address: Camino de Vera. Building 6G (CTT)
city: Valencia

contact info
Titolo: Mr.
Nome: Andrés
Cognome: Moratal Roselló
Email: send email
Telefono: +34 963877409
Fax: +34 963877949

ES (Valencia) coordinator 0.00
2    CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

 Organization address address: RUE MICHEL -ANGE
city: PARIS

contact info
Titolo: Ms.
Nome: Pascaline
Cognome: TOUTOIS
Email: send email
Telefono: +33 4 72445641

FR (PARIS) participant 0.00
3    DAS PHOTONICS SL

 Organization address address: CALLE ISLAS CANARIAS, 6 - 8
city: VALENCIA

contact info
Titolo: Mr.
Nome: Jorge
Cognome: Menéndez
Email: send email
Telefono: 34963556150
Fax: 34963562581

ES (VALENCIA) participant 0.00
4    ECOLE CENTRALE DE LYON

 Organization address address: Avenue Guy de Collongue
city: ECULLY

contact info
Titolo: Dr.
Nome: Bénédicte
Cognome: MARTIN
Email: send email
Telefono: +33 472186708

FR (ECULLY) participant 0.00
5    IBM RESEARCH GMBH

 Organization address address: SAEUMERSTRASSE
city: RUESCHLIKON

contact info
Titolo: Mrs.
Nome: Catherine
Cognome: Trachsel
Email: send email
Telefono: +41 44 724 8289

CH (RUESCHLIKON) participant 0.00
6    IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUER INNOVATIVE MIKROELEKTRONIK

 Organization address address: IM TECHNOLOGIEPARK
city: FRANKFURT (ODER)

contact info
Titolo: Mr.
Nome: Uwe
Cognome: George
Email: send email
Telefono: 493356000000
Fax: 493356000000

DE (FRANKFURT (ODER)) participant 0.00
7    INSTITUT NATIONAL DES SCIENCES APPLIQUEES DE LYON

 Organization address address: AVENUE ALBERT EINSTEIN
city: VILLEURBANNE

contact info
Titolo: Ms.
Nome: Françoise
Cognome: MARTIN
Email: send email
Telefono: +33 472437983

FR (VILLEURBANNE) participant 0.00
8    KATHOLIEKE UNIVERSITEIT LEUVEN

 Organization address address: Oude Markt
city: LEUVEN

contact info
Titolo: Mrs.
Nome: Tine
Cognome: Heylen
Email: send email
Telefono: 3216326520
Fax: 3216326515

BE (LEUVEN) participant 0.00

Mappa


 Word cloud

Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.

first    photonics    silicon    cmos    ultra    switching    tmos    commercial    optical    micro    electronics    batio    sitoga    photonic    tmo    below    innovation    electro    gbit    vo    integration    materials   

 Obiettivo del progetto (Objective)

The SITOGA project will address for the first time the integration of transition metal oxides (TMO) materials in silicon photonics and CMOS electronics. TMOs have unique electro-optical properties that will offer unprecedented and novel capabilities to the silicon platform. SITOGA will focus on two disruptive TMO materials, barium titanate (BaTiO3) and vanadium oxide (VO2), for developing advanced photonic integrated devices for a wide range of applications. First, breakthrough photonic devices will be fabricated using the TMOs. Due to its ultra-high linear electro-optical coefficient, BaTiO3 will be used to develop an electro-optical modulator with bandwidth above 40GHz and drive voltage below 2V. The electrically-triggered, ultra-large change in VO2 refractive index will be exploited to build an electro-optical switching component with power consumption below 10µW and footprint below 50 µm2.The integration of the TMOs and their photonic devices on silicon will be performed with CMOS compatible techniques. Innovative integration processes with silicon photonics circuits and CMOS electronics will be targeted. The whole technology chain will be validated by two functional demonstrators: a 40Gbit/s DPSK transceiver and an 8x8 switching matrix with 100Gbit/s throughput. Furthermore, to fully exploit the unique potential of SITOGA approach, we will also investigate novel electro-optical effects in integrated TMO devices (i.e. bistability) in a more exploratory part.SITOGA situates at the forefront of technological innovation, offering as well the capacity through its consortium members to translate innovation into commercial products. To ensure high commercial impact, a clear path towards exploitation of the developed TMO/Si technology has been defined and will be pursued in the project.

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