MORGAN
Materials for Robust Gallium Nitride
| Coordinatore | III V LAB GIE
Organization address
address: ROUTE DE NOZAY contact info |
| Nazionalità Coordinatore | France [FR] |
| Sito del progetto | http://www.morganproject.eu |
| Totale costo | 13˙862˙596 € |
| EC contributo | 9˙200˙000 € |
| Programma | FP7-NMP
Specific Programme "Cooperation": Nanosciences, Nanotechnologies, Materials and new Production Technologies |
| Code Call | FP7-NMP-2007-LARGE-1 |
| Funding Scheme | CP-IP |
| Anno di inizio | 2008 |
| Periodo (anno-mese-giorno) | 2008-11-01 - 2011-10-31 |
Partecipanti
| # | ||||
|---|---|---|---|---|
| 1 |
III V LAB GIE
Organization address
address: ROUTE DE NOZAY contact info |
FR (MARCOUSSIS) | coordinator | 1˙695˙396.00 |
| 2 |
SWEREA IVF AB
Organization address
address: Argongatan 30 contact info |
SE (MOELNDAL) | participant | 786˙120.00 |
| 3 |
UNIVERSITY OF BATH
Organization address
address: CLAVERTON DOWN contact info |
UK (BATH) | participant | 776˙887.00 |
| 4 |
UNIVERSITAET ULM
Organization address
address: HELMHOLTZSTRASSE 16 contact info |
DE (ULM) | participant | 587˙909.00 |
| 5 |
MICROGAN GMBH
Organization address
address: Albert Einstein Allee 45 contact info |
DE (ULM) | participant | 523˙993.00 |
| 6 |
FOUNDATION FOR RESEARCH AND TECHNOLOGY HELLAS
Organization address
address: N PLASTIRA STR 100 contact info |
EL (HERAKLION) | participant | 523˙731.00 |
| 7 |
ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE
Organization address
address: BATIMENT CE 3316 STATION 1 contact info |
CH (LAUSANNE) | participant | 468˙906.00 |
| 8 |
AIXTRON SE
Organization address
address: KAISERSTRASSE 98 contact info |
DE (HERZOGENRATH) | participant | 453˙096.00 |
| 9 |
RESEARCH CENTRE FOR NATURAL SCIENCES, HUNGARIAN ACADEMY OF SCIENCES
Organization address
address: PUSZTASZERI UTCA 59-67 contact info |
HU (BUDAPEST) | participant | 391˙578.00 |
| 10 |
ELEMENT SIX LIMITED
Organization address
address: KINGS RIDE PARK 2 contact info |
UK (ASCOT) | participant | 326˙575.00 |
| 11 |
TECHNISCHE UNIVERSITAET WIEN
Organization address
address: Karlsplatz 13 contact info |
AT (WIEN) | participant | 312˙067.00 |
| 12 |
SLOVENSKA TECHNICKA UNIVERZITA V BRATISLAVE
Organization address
address: VAZOVOVA 5 contact info |
SK (BRATISLAVA) | participant | 240˙636.00 |
| 13 |
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
Organization address
address: Rue Michel -Ange 3 contact info |
FR (PARIS) | participant | 238˙063.00 |
| 14 |
Gooch & Housego (Torquay) Limited
Organization address
address: BROOMHILL WAY UNIT A contact info |
UK (TORQUAY DEVON) | participant | 224˙705.00 |
| 15 |
UNIVERSITY OF GLASGOW
Organization address
address: University Avenue contact info |
UK (GLASGOW) | participant | 222˙327.00 |
| 16 |
INSTYTUT TECHNOLOGII ELEKTRONOWEJ
Organization address
address: al. Lotnikow 32/46 contact info |
PL (WARSZAWA) | participant | 222˙049.00 |
| 17 |
"Institute of Electrical Engineering, Slovak Academy of Sciences"
Organization address
address: Dubravska 9 contact info |
SK (Bratislava) | participant | 213˙461.00 |
| 18 |
VIVID COMPONENTS LTD
Organization address
address: SIGMA HOUSE OAK VIEW CLOSE contact info |
UK (TORQUAY) | participant | 209˙664.00 |
| 19 |
IMPACT COATINGS AB
Organization address
address: Westmansgatan 31 contact info |
SE (LINKOPING) | participant | 185˙967.00 |
| 20 |
UNIVERSITE JOSEPH FOURIER GRENOBLE 1
Organization address
address: "Avenue Centrale, Domaine Universitaire 621" contact info |
FR (GRENOBLE) | participant | 175˙442.00 |
| 21 |
GWENT ELECTRONIC MATERIALS LIMITED
Organization address
address: "Monmouth House, Mamhilad Park" contact info |
UK (PONTYPOOL) | participant | 173˙322.00 |
| 22 |
DIGITAL METAL AB
Organization address
address: BRUKSGATAN 35 contact info |
SE (HOGANAS) | participant | 156˙233.00 |
| 23 |
CESKE VYSOKE UCENI TECHNICKE V PRAZE
Organization address
address: ZIKOVA 4 contact info |
CZ (PRAHA) | participant | 91˙873.00 |
| 24 |
THALES SA
Organization address
address: Rue de Villiers 45 contact info |
FR (NEUILLY SUR SEINE) | participant | 0.00 |
Mappa
Word cloud
Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.
Obiettivo del progetto (Objective)
'The MORGaN project addresses the need for a new materials for electronic devices and sensors that operate in extreme conditions, especially high temperature, high electric field and highly corrosive environment. It will take advantage of the excellent physical properties of diamond and gallium nitride heterostructures. The association of the two materials will give rise to the best materials and devices for ultimate performance in extreme environments. Both materials possess durability and robustness to high temperature, radiation and electric field. Diamond material exhibits the best mechanical robustness and thermal conductivity, while GaN presents also high electron mobility, giving high power handling and efficiency. III-N systems have other desirable properties for sensor applications in extreme environments. It is the only highly polar semiconductor matrix that has ceramic-like stability and can form heterostructures. It has the highest spontaneous polarisation with a Curie temperature above 1000°C for AlN: a lattice matched III-N heterostructure with a built-in polarisation discontinuity is expected to enable transistor action above 1000°C. The packaging and metallisation of an electronic device or sensor are important elements in extreme conditions. Metal contacts must be stable and the package must be thermally compatible with the device requirements and chemically stable. MORGaN proposes a novel technological solution to electron device and sensor modules. Advanced 3D ceramic packaging and new metallisation techniques based on the emerging technology of MN1AXN alloys will also be explored. As such, the vision of MORGaN for materials for extreme conditions is holistic, involving 2 large industrial partners, 2 industrial labs, 6 SMEs and 13 public research partners. The project includes research, demonstration, management, training and dissemination activities.'
Introduzione (Teaser)
New materials are being developed to create electronic devices and sensors that can withstand exposure to extreme conditions.
Descrizione progetto (Article)
Electronic devices and sensors often need to be used in high temperatures, high electric fields or in highly corrosive environments. Researchers from the 'Materials for robust gallium nitride' (Morgan) project are therefore investigating how diamond and gallium nitride (GaN) heterostructures can be used to produce the best materials for such conditions.
Devices and sensors designed to operate in harsh environments need new semiconductor materials which are stable, especially at high temperatures, and which have substrate and package combinations that enable rapid heat extraction or the capability to withstand high temperatures. Chemical inertness is also an advantage, especially if there is a need to monitor highly corrosive chemical agents.
Scientists in France believe that diamond and gallium nitride heterostructures fulfil these criteria: both materials 'possess durability and robustness to high temperature, radiation and electric fields'. They explain that 'diamond material exhibits the best mechanical robustness and thermal conductivity, while GaN presents high electron mobility, giving high power handling and efficiency'.
In addition, the packaging and metallisation of electronic devices or sensors are essential considerations in extreme conditions and environments, as the researchers highlight. The Morgan project scientists will therefore also trial advanced three-dimensional ceramic packaging and new metallisation techniques.