ALD-SPUTTERING-OXIDE
Atomic layer deposition applied to synthetic carburant production and low temperature microthermal imaging. New sputtering process applied to control oxygen stoechiometry and diffusion in oxide films
| Coordinatore |
Organization address
address: Problemveien 5-7 contact info |
| Nazionalità Coordinatore | Non specificata |
| Totale costo | 45˙000 € |
| EC contributo | 45 € |
| Programma | FP7-PEOPLE
Specific programme "People" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013) |
| Anno di inizio | 2009 |
| Periodo (anno-mese-giorno) | 2009-10-01 - 2012-09-30 |
Partecipanti
| # | ||||
|---|---|---|---|---|
| 1 |
UNIVERSITETET I OSLO
Organization address
address: Problemveien 5-7 contact info |
NO (OSLO) | coordinator | 45˙000.00 |
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Obiettivo del progetto (Objective)
'This project involves 3 parts, the first part relies in the improvement of the Fischer Tropsch process using atomic layer deposition (ALD) of cobalt oxide on mesoporous alumina. The improvement of this reaction is a real challenge as this process is usually used in the conversion of coal or natural gas to liquid hydrocarbons, but can be also applied to production of synthetic fuels from gasified biomass. This process is currently an area of noteworthy process research more specifically concerning the production of liquid fuel from natural gas. The second project concerns the development of a thermal imaging system based on the temperature dependence of the quantum yield of the fluorescence in certain rare-earth chelates. The main issue is to achieve high temperature sensitivity combined with high spatial resolution. This system will operate from room temperature to liquid helium temperature (4.2 K), with sensitivity of deltaT = 0.01 K. To reach these objectives, first Eu-doped organic polymer-based films will be deposited using ALD and studied. The control of the oxygen stoechiometry and diffusion during a deposition is really challenging. A new patented sputtering process allows to control these parameters. This process will be used in the last part of this project for the deposition of first dielectric thin films for transistor applications and then for new multiferroic compounds and structures deposition. This control of the oxygen stoechiometry and diffusion will allow to tune the thin films properties as it is in most of cases the key parameter. This work will be held in close collaboration with the University of Aveiro where the films will be synthesized.'