Explore the words cloud of the PLASMIC project. It provides you a very rough idea of what is the project "PLASMIC" about.
The following table provides information about the project.
Coordinator |
IBM RESEARCH GMBH
Organization address contact info |
Coordinator Country | Switzerland [CH] |
Total cost | 1˙941˙750 € |
EC max contribution | 1˙941˙750 € (100%) |
Programme |
1. H2020-EU.1.1. (EXCELLENT SCIENCE - European Research Council (ERC)) |
Code Call | ERC-2015-STG |
Funding Scheme | ERC-STG |
Starting year | 2016 |
Duration (year-month-day) | from 2016-04-01 to 2021-03-31 |
Take a look of project's partnership.
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1 | IBM RESEARCH GMBH | CH (RUESCHLIKON) | coordinator | 1˙941˙750.00 |
The ambition of PLASMIC is to address the bottleneck caused by electrical interconnects and develop on-chip optical interconnect solutions based on plasmonically-enhanced nanoscale emitters. Nanoscale photonic components are desirable for on-chip communications because of density, speed and because reducing the size of the cavity might reduce the lasing threshold. Conventional photonics are limited in scale by the diffraction-limit to dimensions of half of the wavelength of light in the material. This limit does not apply to plasmonics, an optical mode that exists at the interface between a metal and a dielectric. Thus, they have a great potential for applications where down-scaling and confinement are primordial. One of the barriers for applying plasmonics is the large losses associated with the metals. Thus in PLASMIC alternative plasmonic metals will be investigated based on their potential for tuning, VLSI compatibility, deposition methods and achieving lower optical losses in the near-IR. I will focus on highly doped semiconductors, metal nitrides, as well as multi-layers and compounds to form new plasmonic materials. Specifically, I will evaluate the use of the field-effect to achieve the semiconductor-metal transition to tune the plasma frequency. New pioneering device concepts for plasmonic-photonic emitters on a silicon platform integrated with passive silicon photonic waveguides will be developed. To implement the gain medium for the lasers, I will exploit a novel nanowire (NW) integration approach: Template-Assisted Epitaxy. The unique advantages make it possible to grow III-V NWs on any orientation of silicon and aligned to lithographic features. The devices will be based on a hybrid cavity formed between the NW and a Si waveguide with gratings to provide feedback. My team and I will explore dimensional scaling potential as well as the energy efficiency of plasmonic and photonic devices operating both in a lasing as well as in a subthreshold operation mode.
year | authors and title | journal | last update |
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2018 |
M. Sousa, S. Mauthe, B. Mayer, Wirths, H. Schmid, K.E. Moselund Monolithic integration of III-V on Si applied to lasing micro-cavities: insights from STEM and EDX published pages: , ISSN: , DOI: 10.1109/nano.2018.8626223 |
IEEE Nano, Track 3. Nanoelectronics: New Materials II yearly | 2019-07-08 |
2018 |
S. Mauthe, H. Schmid, B. Mayer, S. Wirths, P. Staudinger, Y. Baumgartner, C. Convertino, L. Czornomaz, M. Sousa and K. E. Moselund Monolithic integration of III-Vs on silicon for electronic and photonic applications (Invited)- as an invited talk it was not peer reviewed, not available online yet published pages: , ISSN: , DOI: |
44th Micro- and Nanoengineering conference, MNE yearly | 2019-07-08 |
2018 |
Stephan Wirths, Benedikt F. Mayer, Heinz Schmid, Marilyne Sousa, Johannes Gooth, Heike Riel, Kirsten E. Moselund Room-Temperature Lasing from Monolithically Integrated GaAs Microdisks on Silicon published pages: 2169-2175, ISSN: 1936-0851, DOI: 10.1021/acsnano.7b07911 |
ACS Nano 12/3 | 2019-07-08 |
2019 |
Benedikt F. Mayer, Stephan Wirths, Svenja Mauthe, Philipp Staudinger, Marilyne Sousa, Joel Winiger, Heinz Schmid, Kirsten E. Moselund Microcavity Lasers on Silicon by Template-Assisted Selective Epitaxy of Microsubstrates published pages: 1-1, ISSN: 1041-1135, DOI: 10.1109/lpt.2019.2916459 |
IEEE Photonics Technology Letters | 2019-06-06 |
2019 |
Svenja Mauthe, Noelia Vico Trivino, Yannick Baumgartner, Marilyne Sousa, Daniele Caimi, Thilo Stoeferle, Heinz Schmid, Kirsten Moselund InP-on-Si Optically Pumped Microdisk Lasers via Monolithic Growth and Wafer Bonding published pages: 1-1, ISSN: 1077-260X, DOI: 10.1109/jstqe.2019.2915924 |
IEEE Journal of Selected Topics in Quantum Electronics | 2019-06-06 |
2018 |
Philipp Staudinger, Svenja Mauthe, Kirsten E. Moselund, Heinz Schmid Concurrent Zinc-Blende and Wurtzite Film Formation by Selection of Confined Growth Planes published pages: 7856-7862, ISSN: 1530-6984, DOI: 10.1021/acs.nanolett.8b03632 |
Nano Letters 18/12 | 2019-05-04 |
2018 |
S. Sant and A. Schenk, B. Mayer, S. Wirths, S. Mauthe, H. Schmid, and K. E. Moselund Modeling whispering gallery mode III-V micro-lasers monolithically integrated on Silicon - not presented yet published pages: , ISSN: , DOI: |
Numerical Simulation of Optoelectronic Devices (NUSOD) annually | 2019-05-29 |
2018 |
S. Mauthe, H. Schmid, B. Mayer, S. Wirths, C. Convertino, Y. Baumgartner, L. Czornomaz, M. Sousa, P. Staudinger, H. Riel and K. E. Moselund Monolithic Integration of III-V on silicon for photonic and electronic applications (Invited) - invited, hence not peer reviewed published pages: , ISSN: , DOI: |
Device Research Conference annually | 2019-05-29 |
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