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PerovSiC SIGNED

Synergistic Resistive Switching of Perovskite and Silicon Carbide materials for Advanced ReRAM micro Devices

Total Cost €

EC-Contrib. €

Partnership

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Outcomes and
results

PerovSiC project word cloud

Explore the words cloud of the PerovSiC project. It provides you a very rough idea of what is the project "PerovSiC" about.

multilevel training enforce heterostructures hosting optimized reram characterization computation career material microelectronics science stable constraints reversible specialisation perovsic synchrotron technologies professional overcome storage compatible iedp micro gaining nanoscale operando point cutting configuration starting synergistically chemical market group breakthroughs introducing re phenomena deep switching acquiring n perovskites unclear nanoionics tune redox oxides thermally giving el physical raman combines edge ml switch carbide perspectives device perovskite ensc maturity final lille resistive materials eacute memories tof view multidisciplinary sims researcher techniques competences computational transport skills modeling complement logic xpeem position unexpected rs candidate neuromorphic mass chemically

Project "PerovSiC" data sheet

The following table provides information about the project.

Coordinator	CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS Organization address address: RUE MICHEL ANGE 3 city: PARIS postcode: 75794 website: www.cnrs.fr contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.
Coordinator Country	France [FR]
Total cost	185˙076 €
EC max contribution	185˙076 € (100%)
Programme	1. H2020-EU.1.3.2. (Nurturing excellence by means of cross-border and cross-sector mobility)
Code Call	H2020-MSCA-IF-2016
Funding Scheme	MSCA-IF-EF-ST
Starting year	2017
Duration (year-month-day)	from 2017-07-01 to 2019-10-20

Partnership

Take a look of project's partnership.

#	participants	country	role	EC contrib. [€]
1	CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS Organization address address: RUE MICHEL ANGE 3 city: PARIS postcode: 75794 website: www.cnrs.fr contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	FR (PARIS)	coordinator	185˙076.00

Map

Project objective

Perovskite oxides are one of the most promising materials for developing new ReRAM devices, because they show a Resistive Switching (RS) behaviour and multilevel (ML) storage properties through reversible nanoionics redox phenomena. However, several challenges remain to be addressed before introducing them in the emerging memories market. From a material point of view, it is still unclear how to tune and control the mass transport properties at the nanoscale to get the best resistive switch response. From a device point of view, the development of new heterostructures thermally and chemically stable and compatible with the microelectronics technology is required. The ‘PerovSiC’ project combines synergistically perovskite and carbide materials to overcome the current constraints. Starting from the recent breakthroughs of the hosting group, the project focuses on understanding the RS behaviour in perovskites using physical and chemical cutting-edge characterization methods. Further, computational modeling will allow improving the RS process in the new carbide-based heterostructures. The final optimized configuration will be integrated in a highly stable ML ReRAM device. The results of the project will lead to unexpected breakthroughs for neuromorphic computation, memories and logic devices. The multidisciplinary approach proposed will allow the researcher candidate gaining a deep understanding and specialisation in material science - acquiring new competences in advanced techniques, such as XPEEM and operando Raman - and in Key Enabling Technologies, such as micro-technology. Moreover, the collaboration with the ENSC-Lille and the Institute Néel will complement the researcher’s training giving her unique skills in IEDP-ToF-SIMS and synchrotron measurements. Therefore, planned research and training activities in the ‘PerovSiC’ project will re-enforce a position of professional maturity in research and will provide the researcher new career perspectives.

Publications

List of publications.
year	authors and title	journal	last update
2019	Benjamin Meunier, Dolors Pla, Raquel Rodriguez-Lamas, Michel Boudard, Odette Chaix-Pluchery, EugÃ©nie Martinez, Nicolas Chevalier, Carmen JimÃ©nez, MÃ³nica Burriel, Olivier Renault Microscopic Mechanisms of Local Interfacial Resistive Switching in LaMnO 3+Î´ published pages: 675-683, ISSN: 2637-6113, DOI: 10.1021/acsaelm.9b00030	ACS Applied Electronic Materials 1/5	2020-04-24
2019	Raquel Rodriguez-Lamas, Dolors Pla, Odette Chaix-Pluchery, Benjamin Meunier, Fabrice Wilhelm, Andrei Rogalev, Laetitia Rapenne, Xavier Mescot, Quentin Rafhay, HervÃ© Roussel, Michel Boudard, Carmen JimÃ©nez, MÃ³nica Burriel Integration of LaMnO 3+Î´ films on platinized silicon substrates for resistive switching applications by PI-MOCVD published pages: 389-398, ISSN: 2190-4286, DOI: 10.3762/bjnano.10.38	Beilstein Journal of Nanotechnology 10	2020-04-24
2019	Benjamin Meunier, EugÃ©nie Martinez, Raquel Rodriguez-Lamas, Dolors Pla, MÃ²nica Burriel, Michel Boudard, Carmen JimÃ©nez, Jean-Pascal Rueff, Olivier Renault Resistive switching in a LaMnO 3â€‰+â€‰Î´ /TiN memory cell investigated by operando hard X-ray photoelectron spectroscopy published pages: 225302, ISSN: 0021-8979, DOI: 10.1063/1.5125420	Journal of Applied Physics 126/22	2020-04-24
2017	Dolors Pla, Carmen Jimenez, MÃ³nica Burriel Engineering of Functional Manganites Grown by MOCVD for Miniaturized Devices published pages: 1600974, ISSN: 2196-7350, DOI: 10.1002/admi.201600974	Advanced Materials Interfaces 4/8	2020-04-24

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