Explore the words cloud of the WInSiC4AP project. It provides you a very rough idea of what is the project "WInSiC4AP" about.
The following table provides information about the project.
Coordinator |
DISTRETTO TECNOLOGICO SICILIA MICROE NANO SISTEMI SCARL
Organization address contact info |
Coordinator Country | Italy [IT] |
Project website | http://www.winsic4ap-project.org |
Total cost | 27˙336˙714 € |
EC max contribution | 4˙121˙238 € (15%) |
Programme |
1. H2020-EU.2.1.1.7. (ECSEL) |
Code Call | H2020-ECSEL-2016-1-RIA-two-stage |
Funding Scheme | ECSEL-RIA |
Starting year | 2017 |
Duration (year-month-day) | from 2017-06-01 to 2020-11-30 |
Take a look of project's partnership.
WInSiC4AP core objective is to contribute in developing reliable technology bricks for efficient and cost-effective applications addressing social challenges and market segments where Europe is a recognized global leader as well as automotive, avionics, railway and defence. WInSiC4AP approach is to rely on the strength of vertical integration allowing optimization, technologies fitting application requirements, developing the full ecosystem and approach relevant issues as reliability in the full scope. That enhances the competitiveness of EU- Industries as well as TIER1 and TIER2 down to the value chain in a market context where other countries today, such as the USA or Japan, are advancing and new players accessing SiC enter in the market.
New topologies and architecture will be developed for targeted application simulating operational environment, at laboratory level, driving the needed and still missed technologies, components and demonstrators to fill the gap between current state of the art and the very high demanding specifications. WInSiC4AP framework has been built so that companies working in different domains (i.e. automotive car maker and TIER1-2 and avionics, railway and defence TIER1-TIER2) and in the vertical value chain (semiconductor suppliers, companies manufacturing inductors and capacitors) as well as academic entities and laboratories will collaborate to co-design solutions, solve problems and exchange know-how, such that unforeseen results may also emerge. WInSiC4AP will be supported with synergy between ECSEL JU and ESI funding enabling complementary activities with relevant economic and social impact envisage in a less development region of Union.
D7a.2.1 - First WInSiC4AP International Workshop | Websites, patent fillings, videos etc. | 2020-04-08 23:56:48 |
D7a.1.2.3 - Database of Dissemination activities | Documents, reports | 2020-04-08 23:56:48 |
D7a.1.1 - Project web site | Websites, patent fillings, videos etc. | 2020-04-08 23:56:46 |
D7a.1.2.1 - Database of Dissemination activities | Documents, reports | 2020-04-08 23:56:46 |
D7a.1.2.2 - Database of Dissemination activities | Documents, reports | 2020-04-08 23:56:46 |
Take a look to the deliverables list in detail: detailed list of WInSiC4AP deliverables.
year | authors and title | journal | last update |
---|---|---|---|
2018 |
M. Cacciato, F. Scrimizzi, A. Palermo, F. Gennaro, D. Nardo Power devices comparison in synchronous half bridge topology, IEEE Proc. of the 20th European Conference on Power Electronics and Applications published pages: , ISSN: , DOI: |
Proc. of the 20th European Conference on Power Electronics and Applications | 2020-04-08 |
2019 |
P. Fiorenza, M. Vivona, S. Di Franco, E. Smecca, S. Sanzaro, A. Alberti, M. Saggio, F. Roccaforte Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering published pages: 290-294, ISSN: 1369-8001, DOI: 10.1016/j.mssp.2019.01.017 |
Materials Science in Semiconductor Processing 93 | 2020-04-08 |
2019 |
J. Domingo Salvany, P. Decroux, C. Degoutte, L. Liggio, S. Frisella HVDC Intelligent Power Switchs for aircraft power distribution published pages: , ISSN: , DOI: |
Proc. of MEA 2019 : More Electric Aircraft | 2020-04-08 |
2019 |
G. Consentino, E. Guevara, L. Sanchez, F. Crupi, S. Reggiani, G. Meneghesso \"Threshold Voltage Instability in SiC Power MOSFETs\"\",\" published pages: , ISSN: , DOI: |
Proc. of the PCIM European Conference 2019: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management | 2020-04-08 |
2019 |
A. Imbruglia, M. Saggio, S. Cascino, A. Minotti, M. Renna, G. Gullotta, J. Favre, F. Roccaforte, P. Fiorenza, L. Liggio, S. Frisella, A.Lionetto WInSiC4AP: Wide band gap Innovative SiC for Advanced Power published pages: , ISSN: , DOI: |
Proc. of the AEIT - International Conference of Electrical and Electronic Technologies for Automotive | 2020-04-08 |
2019 |
S. Rascunà , P. Badalà , C. Tringali, C. Bongiorno, E. Smecca, A. Alberti, S. Di Franco, F. Giannazzo, G. Greco, F. Roccaforte, M. Saggio Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC published pages: 62-66, ISSN: 1369-8001, DOI: 10.1016/j.mssp.2019.02.031 |
Materials Science in Semiconductor Processing 97 | 2020-04-08 |
2018 |
Patrick Fiorenza, Ferdinando Iucolano, Giuseppe Nicotra, Corrado Bongiorno, Ioannis Deretzis, Antonino La Magna, Filippo Giannazzo, Mario Saggio, Corrado Spinella, Fabrizio Roccaforte Electron trapping at SiO 2 /4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis published pages: 395702, ISSN: 0957-4484, DOI: 10.1088/1361-6528/aad129 |
Nanotechnology 29/39 | 2020-04-08 |
2018 |
Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Giuseppe Nicotra, Corrado Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte Temperature-dependent Fowler-Nordheim electron barrier height in SiO 2 /4H-SiC MOS capacitors published pages: 38-42, ISSN: 1369-8001, DOI: 10.1016/j.mssp.2017.11.024 |
Materials Science in Semiconductor Processing 78 | 2020-04-08 |
2018 |
Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Fabrizio Roccaforte Temperature-Dependence Study of the Gate Current SiO2/4H-SiC MOS Capacitors published pages: 473-476, ISSN: 1662-9752, DOI: 10.4028/www.scientific.net/MSF.924.473 |
Materials Science Forum 924 | 2020-04-08 |
2018 |
Patrick Fiorenza, Ferdinando Iucolano, Mario Saggio, Fabrizio Roccaforte Oxide Traps Probed by Transient Capacitance Measurements on Lateral SiO2/4H-SiC MOSFETs published pages: 285-288, ISSN: 1662-9752, DOI: 10.4028/www.scientific.net/MSF.924.285 |
Materials Science Forum 924 | 2020-04-08 |
2018 |
Massimo Zimbone, Nicolò Piluso, Grazia Litrico, Roberta Nipoti, Riccardo Reitano, Maria Concetta Canino, Maria Ausilia di Stefano, Simona Lorenti, Francesco La Via Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET published pages: 357-360, ISSN: 1662-9752, DOI: 10.4028/www.scientific.net/MSF.924.357 |
Materials Science Forum 924 | 2020-04-08 |
2018 |
Fabrizio Roccaforte, Marilena Vivona, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Simone Rascunà , Mario Saggio Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology published pages: 339-344, ISSN: 1662-9752, DOI: 10.4028/www.scientific.net/MSF.924.339 |
Materials Science Forum 924 | 2020-04-08 |
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The information about "WINSIC4AP" are provided by the European Opendata Portal: CORDIS opendata.