NANOFAB4CNT

Novel bottom-up nanofabrication techniques for future carbon-nanoelectronics

 Coordinatore TECHNISCHE UNIVERSITEIT EINDHOVEN 

 Organization address address: DEN DOLECH 2
city: EINDHOVEN
postcode: 5612 AZ

contact info
Titolo: Mr.
Nome: A.(Alfons) W.J.
Cognome: Bruekers
Email: send email
Telefono: +31 40 2473262
Fax: +31 40 2437175

 Nazionalità Coordinatore Netherlands [NL]
 Totale costo 100˙000 €
 EC contributo 100˙000 €
 Programma FP7-PEOPLE
Specific programme "People" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013)
 Code Call FP7-PEOPLE-2012-CIG
 Funding Scheme MC-CIG
 Anno di inizio 2012
 Periodo (anno-mese-giorno) 2012-08-01   -   2016-07-31

 Partecipanti

# participant  country  role  EC contrib. [€] 
1    TECHNISCHE UNIVERSITEIT EINDHOVEN

 Organization address address: DEN DOLECH 2
city: EINDHOVEN
postcode: 5612 AZ

contact info
Titolo: Mr.
Nome: A.(Alfons) W.J.
Cognome: Bruekers
Email: send email
Telefono: +31 40 2473262
Fax: +31 40 2437175

NL (EINDHOVEN) coordinator 100˙000.00

Mappa


 Word cloud

Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.

deposition    atomic    materials    situ    nano    electronic    continuous    electronics    scaling    nanotubes    toolbox    techniques    nanofabrication    carbon    manufacturing    lithography    beam    device   

 Obiettivo del progetto (Objective)

'This research program aims at pioneering and developing new nanofabrication techniques for carbon-nanoelectronics using a so-called 'bottom-up' approach. Individual building blocks for carbon-based nanodevices, such as catalyst nanoparticles, horizontally aligned carbon-nanotubes and ultra-scaled contacts and dielectrics will be precisely placed directly on the chip, without the use of lithography. This will be accomplished by using unique combinations of electron-beam induced deposition (EBID), atomic layer deposition (ALD) and oblique ion beam treatments. The process development will go hand-in-hand with atomic level understanding of the developed processes using in-situ and ex-situ analysis techniques to ensure process reproducibility and selectivity.

The need for new nanofabrication processes is a consequence of continuous down-scaling of electronic devices over the last 60 years for improved device performance. This continuous down-scalling will soon come to an end due to material limitations and the absence of viable processing techniques for even smaller nano-devices. On the materials side, carbon nanotubes (CNTs) and graphene hold great promise for next-generation nano-electronics due to their superior materials properties. However, for successful introduction of such carbon-based nano-devices in commercial products many manufacturing challenges need to be solved. Current 'top-down' electronics manufacturing techniques (e.g., materials patterning using photo- or e-beam lithography) will not be able to overcome these challenges.

At the end of this research program a toolbox will be available with direct-write nanofabrication techniques that are universally applicable in any bottom-up nano-device manufacturing process. This toolbox will aid further scaling and improvement of future nano-electronic devices.'

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