MOWSES
Nanoelectronics based on two-dimensional dichalcogenides
| Coordinatore | ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE
Organization address
address: BATIMENT CE 3316 STATION 1 contact info |
| Nazionalità Coordinatore | Switzerland [CH] |
| Totale costo | 3˙703˙140 € |
| EC contributo | 3˙703˙140 € |
| Programma | FP7-PEOPLE
Specific programme "People" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013) |
| Code Call | FP7-PEOPLE-2012-ITN |
| Funding Scheme | MC-ITN |
| Anno di inizio | 2013 |
| Periodo (anno-mese-giorno) | 2013-03-01 - 2017-02-28 |
Partecipanti
| # | ||||
|---|---|---|---|---|
| 1 |
ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE
Organization address
address: BATIMENT CE 3316 STATION 1 contact info |
CH (LAUSANNE) | coordinator | 552˙957.34 |
| 2 |
JACOBS UNIVERSITY BREMEN GGMBH
Organization address
address: Campus Ring 1 contact info |
DE (BREMEN) | participant | 748˙483.16 |
| 3 |
THE PROVOST, FELLOWS, FOUNDATION SCHOLARS & THE OTHER MEMBERS OF BOARD OF THE COLLEGE OF THE HOLY & UNDIVIDED TRINITY OF QUEEN ELIZABETH NEAR DUBLIN
Organization address
address: College Green - contact info |
IE (DUBLIN) | participant | 550˙098.10 |
| 4 |
INSTITUT JOZEF STEFAN
Organization address
address: Jamova 39 contact info |
SI (LJUBLJANA) | participant | 480˙403.56 |
| 5 |
WEIZMANN INSTITUTE OF SCIENCE
Organization address
address: HERZL STREET 234 contact info |
IL (REHOVOT) | participant | 469˙435.14 |
| 6 |
Scientific Computing & Modelling N.V.
Organization address
address: De Boelelaan 1083 contact info |
NL (Amsterdam) | participant | 402˙773.95 |
| 7 |
AIXTRON SE
Organization address
address: KAISERSTRASSE 98 contact info |
DE (HERZOGENRATH) | participant | 249˙494.40 |
| 8 |
EVONIK INDUSTRIES AG
Organization address
address: RELLINGHAUSER STRASSE 1-11 contact info |
DE (ESSEN) | participant | 249˙494.40 |
Mappa
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Obiettivo del progetto (Objective)
'Semiconductor industry rapidly approaches the performance limits of silicon-based CMOS technology. This proposal aims to pave the way to electronic circuits based on two-dimensional transition metal dichalcogenides (TMDs), newly emerging semiconducting analogues of graphene. TMDs can be rapidly exfoliated in the liquid phase into single layers starting from powders and provide solutions of 2D materials that can be coated over large areas. The recently achieved transistors based on single-layer MoS2 indicate a mobility comparable or even higher than silicon thin films or graphene nanoribbons, but with much lower leakage currents. In a joint effort of wet and gas phase chemistry and deposition techniques, nanoanalytics, electronic and optical spectroscopy, electronic device fabrication and characterisation, and theoretical modeling we aim to control the production and deposition of TMD nanolayers and nanoribbons, understand and control the interplay between morphology, defects and electrical properties, understand electrical transport through semiconducting nanolayers, and fabricate nanodevices. By combining the ease of processing commonly associated with organic electronics with superior electrical properties, we will demonstrate a new type of low-power, low-cost field effect transistor based on a single TMD layer and/or nanoribbon. The proposed outcomes of immediate interest for the three full partners from industry are (i) process flows and practices that enable fabrication of nanoscale transistor arrays for application in flexible electronics via spraying and/or ink-jet printing, (ii) software packages for modeling the electronic behavior of TMD nanolayers, and (iii) a prototype reactor for their large-scale growth and deposition. The training and dissemination activities will be complemented by an associated partner who will produce educational videos together with the young researchers of the consortium.'