GEMINI

GErmanium MId-infrared plasmoNIcs for sensing

 Coordinatore POLITECNICO DI MILANO 

 Organization address address: PIAZZA LEONARDO DA VINCI 32
city: MILANO

contact info
Titolo: Dr.
Nome: Paolo
Cognome: Biagioni
Email: send email
Telefono: +39 0223996599

 Nazionalità Coordinatore Italy [IT]
 Totale costo 2˙267˙220 €
 EC contributo 1˙737˙205 €
 Programma FP7-ICT
Specific Programme "Cooperation": Information and communication technologies
 Code Call FP7-ICT-2013-X
 Funding Scheme CP
 Anno di inizio 2014
 Periodo (anno-mese-giorno) 2014-02-01   -   2017-01-31

 Partecipanti

# participant  country  role  EC contrib. [€] 
1    POLITECNICO DI MILANO

 Organization address address: PIAZZA LEONARDO DA VINCI 32
city: MILANO

contact info
Titolo: Dr.
Nome: Paolo
Cognome: Biagioni
Email: send email
Telefono: +39 0223996599

IT (MILANO) coordinator 0.00
2    UNIVERSITA DEGLI STUDI DI ROMA LA SAPIENZA

 Organization address address: Piazzale Aldo Moro
city: ROMA

contact info
Titolo: Dr.
Nome: Lisena
Cognome: Rubini
Email: send email
Telefono: +39 0649914226
Fax: 39064957697

IT (ROMA) participant 0.00
3    UNIVERSITAT KONSTANZ

 Organization address address: UNIVERSITATSSTRASSE
city: KONSTANZ

contact info
Titolo: Dr.
Nome: Daniele
Cognome: Brida
Email: send email
Telefono: +49 07531883823

DE (KONSTANZ) participant 0.00
4    UNIVERSITY OF GLASGOW

 Organization address address: University Avenue
city: GLASGOW

contact info
Titolo: Mr.
Nome: Joe
Cognome: Galloway
Email: send email
Telefono: 441413000000

UK (GLASGOW) participant 0.00

Mappa


 Word cloud

Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.

plasmonic    semiconductor    infrared    optical    ge    plasma    sensing    semiconductors    integration    antennas    chemical    molecule    mid    doped    light    heavily    specificity    waveguides    electromagnetic   

 Obiettivo del progetto (Objective)

We aim at laying the foundations of a novel paradigm in optical sensing by introducing molecule-specific strong light-matter interaction at mid-infrared wavelengths through the engineering of plasmonic effects in group-IV semiconductors.The key enabling technology is the novel germanium-on-silicon material platform: heavily-doped Ge films display plasma frequencies in the mid-infrared range. This allows for the complete substitution of metals with CMOS-compatible semiconductors in plasmonic infrared sensors, with enormous advantages in terms of fabrication quality and costs. Moreover, the mid-infrared range offers the unique opportunity of molecule specificity to target gases in the atmosphere, analytes in a solution or biomolecules in a diagnostic assay.We will develop sensing substrates containing infrared antennas and waveguides with antenna-enhanced detectors. Antennas and waveguides will be made of heavily-doped Ge to fully exploit plasmonic effects: high field concentration to increase sensitivity, resonant coupling to vibrational lines for chemical specificity, deeper integration to decrease costs. To achieve our goals we will rely on semiconductor growth by chemical vapor deposition, electromagnetic simulations, micro/nanofabrication of devices and advanced infrared spectroscopy. We aim at studying the fundamental properties of new materials and devices in order to assess their potential for sensing.Impacts of the proposed research go far beyond transforming optical sensing technology. Lab-on-chip disposable biosensors with integrated readout for medical diagnostics would radically cut healthcare costs. The possibility of actively tuning electromagnetic signals by electrical and/or optical control of the plasma frequency in semiconductors holds promises for dramatic opto-electronic integration. Finally, plasmonic semiconductor antennas will impact on photovoltaics, light harvesting and thermal imaging.

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