SPEED
Silicon Carbide Power Technology for Energy Eficient Devices
| Coordinatore | INAEL ELECTRICAL SYSTEMS SA
Organization address
address: CALLE JARAMA 1 POLIGONO INDUSTRIAL contact info |
| Nazionalità Coordinatore | Spain [ES] |
| Totale costo | 18˙585˙983 € |
| EC contributo | 12˙297˙781 € |
| Programma | FP7-NMP
Specific Programme "Cooperation": Nanosciences, Nanotechnologies, Materials and new Production Technologies |
| Code Call | FP7-NMP-2013-LARGE-7 |
| Funding Scheme | CP-IP |
| Anno di inizio | 2014 |
| Periodo (anno-mese-giorno) | 2014-01-01 - 2017-12-31 |
Partecipanti
| # | ||||
|---|---|---|---|---|
| 1 |
INAEL ELECTRICAL SYSTEMS SA
Organization address
address: CALLE JARAMA 1 POLIGONO INDUSTRIAL contact info |
ES (TOLEDO) | coordinator | 983˙780.00 |
| 2 |
AGENCIA ESTATAL CONSEJO SUPERIOR DE INVESTIGACIONES CIENTIFICAS
Organization address
address: CALLE SERRANO 117 contact info |
ES (MADRID) | participant | 1˙285˙840.00 |
| 3 |
ABB SCHWEIZ AG
Organization address
address: Brown Boveri Strasse 6 contact info |
CH (BADEN) | participant | 1˙195˙000.00 |
| 4 |
ASCATRON AB
Organization address
address: ELECTRUM 236 contact info |
SE (KISTA) | participant | 996˙300.00 |
| 5 |
INFINEON TECHNOLOGIES AG
Organization address
address: Am Campeon 1-12 contact info |
DE (Neubiberg) | participant | 944˙995.00 |
| 6 |
INFINEON TECHNOLOGIES AUSTRIA AG
Organization address
address: SIEMENSSTRASSE 2 contact info |
AT (VILLACH) | participant | 909˙704.00 |
| 7 |
UNIVERSITAET BREMEN
Organization address
address: Bibliothekstrasse 1 contact info |
DE (BREMEN) | participant | 888˙780.00 |
| 8 |
FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V
Organization address
address: Hansastrasse 27C contact info |
DE (MUENCHEN) | participant | 794˙959.00 |
| 9 |
NORSTEL AB
Organization address
address: PO BOX 734 contact info |
SE (NORKOPING) | participant | 771˙976.00 |
| 10 |
THE UNIVERSITY OF NOTTINGHAM
Organization address
address: University Park contact info |
UK (NOTTINGHAM) | participant | 691˙048.00 |
| 11 |
UNIVERSIDAD DE OVIEDO
Organization address
address: Calle San Francisco 3 contact info |
ES (OVIEDO) | participant | 531˙820.80 |
| 12 |
GOTTFRIED WILHELM LEIBNIZ UNIVERSITAET HANNOVER
Organization address
address: Welfengarten 1 contact info |
DE (HANNOVER) | participant | 489˙579.20 |
| 13 |
INGETEAM POWER TECHNOLOGY SA
Organization address
address: PARQUE TECNOLOGICO DE BIZKAIA EDIFICIO 106 contact info |
ES (ZAMUDIO) | participant | 468˙000.00 |
| 14 |
TECHNISCHE UNIVERSITAET MUENCHEN
Organization address
address: Arcisstrasse 21 contact info |
DE (MUENCHEN) | participant | 451˙552.00 |
| 15 |
ANNEALSYS SAS
Organization address
address: RUE DE LA VIEILLE POSTE PIT DE LA contact info |
FR (MONTPELLIER CEDEX 1) | participant | 346˙647.00 |
| 16 |
CESKE VYSOKE UCENI TECHNICKE V PRAZE
Organization address
address: ZIKOVA 4 contact info |
CZ (PRAHA) | participant | 341˙400.00 |
| 17 |
ENEL DISTRIBUZIONE S.P.A.
Organization address
address: Via Ombrone 2 contact info |
IT (ROMA) | participant | 206˙400.00 |
Mappa
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Obiettivo del progetto (Objective)
'Highly efficient Power Electronics (PE) employed in power generation, transmission, and distribution is the prerequisite for the Europe-wide penetration of renewable energies; improves the energy efficiency; increases the power quality and enables continuous voltage regulation, reactive power compensation and automated distribution. It also facilitates the integration of distributed resources like local energy storages, photovoltaic generators, and plug-in electric vehicles.
The development of a new generation of high power semiconductor devices, able to operate above 10kV, is crucial for reducing the cost of PE in the above-mentioned applications. The material properties of SiC, clearly superior to those of Si, will lead to enhanced power devices with much better performance than conventional Si devices. However, today´s SiC PE performs rather poorly compared to the predictions and the production costs are by far too high.
Pooling world-leading manufacturers and researchers, SPEED aims at a breakthrough in SiC technology along the whole supply chain:
• Growth of SiC substrates and epitaxial-layers. • Fabrication of power devices in the 1.7/>10kV range. • Packaging and reliability testing. • SiC-based highly efficient power conversion cells. • Real-life applications and field-tests in close cooperation with two market-leading manu¬facturers of high-voltage (HV) devices.
Known and new methodologies will be adapted to SiC devices and optimized to make them a practical reality. The main targets are cost-savings and superior power quality using more efficient power converters that exploit the reduced power losses of SiC. To this end, suitable SiC substrates, epitaxial-layers, and HV devices shall be developed and eventually be implemented in two demonstrators:
• A cost-efficient solid-state transformer to support advanced grid smartness and power quality. • A windmill power converter with improved capabilities for generating AC and DC power.'