Coordinatore | DANMARKS TEKNISKE UNIVERSITET
Organization address
address: Anker Engelundsvej 1, Building 101A contact info |
Nazionalità Coordinatore | Denmark [DK] |
Totale costo | 586˙043 € |
EC contributo | 586˙043 € |
Programma | FP7-PEOPLE
Specific programme "People" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013) |
Code Call | FP7-PEOPLE-2013-ITN |
Funding Scheme | MC-ITN |
Anno di inizio | 2014 |
Periodo (anno-mese-giorno) | 2014-02-01 - 2018-01-31 |
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1 |
DANMARKS TEKNISKE UNIVERSITET
Organization address
address: Anker Engelundsvej 1, Building 101A contact info |
DK (KONGENS LYNGBY) | coordinator | 580˙268.94 |
2 |
III V LAB GIE
Organization address
address: ROUTE DE NOZAY contact info |
FR (MARCOUSSIS) | participant | 5˙775.00 |
Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.
'With the advent of smart phones, tablets and connected cameras, mobile data traffic is growing at a very fast pace. The capacity of mobile backhaul network must be increased to deal with this data explosion. In that respect there is at present an increased interest in exploiting the millimeter-wave frequency range (30-300 GHz) for wireless backhauling. The progress in semiconductor device technology, in particular compound semiconductor transistors such as High Electron Mobility Transistor (HEMT) and Heterojunction Bipolar Transistor (HBT) devices enables the development of wireless communication circuits operating at frequencies well above 100 GHz. The main bottleneck in these mm-wave wireless communication systems today is the power amplifier (PA) which sets the limit on the available transmission range. The overall objective of the 'IN-POWER' project will be to develop an InP HBT technology optimized for millimeter-wave power applications. The development of the InP DHBT technology will be accompanied by the MMIC (Monolitic Microwave Integrated Circuits) implementation of PA's targeting emerging applications at E-band (71-76 and 81-86 GHz) and higher millimeter-wave frequencies.'