GRAQUADOT

Novel ultrasensitive imaging sensors based on graphene-quantum dot hybrid technology

 Coordinatore FUNDACIO INSTITUT DE CIENCIES FOTONIQUES 

Spiacenti, non ci sono informazioni su questo coordinatore. Contattare Fabio per maggiori infomrazioni, grazie.

 Nazionalità Coordinatore Spain [ES]
 Totale costo 165˙874 €
 EC contributo 149˙963 €
 Programma FP7-IDEAS-ERC
Specific programme: "Ideas" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013)
 Code Call ERC-2013-PoC
 Funding Scheme CSA-SA(POC)
 Anno di inizio 2014
 Periodo (anno-mese-giorno) 2014-04-01   -   2015-03-31

 Partecipanti

# participant  country  role  EC contrib. [€] 
1    FUNDACIO INSTITUT DE CIENCIES FOTONIQUES

 Organization address address: AVINGUDA CARL FRIEDRICH GAUSS 3
city: Castelldefels
postcode: 8860

contact info
Titolo: Ms.
Nome: Dolors
Cognome: Mateu
Email: send email
Telefono: +34 93 553 40 53

ES (Castelldefels) hostInstitution 149˙963.00

Mappa


 Word cloud

Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.

cmos    layer    hybrid    compatible    phototransistors    infrared    safety    vision   

 Obiettivo del progetto (Objective)

'Sensing and imaging in the short-wave infrared (SWIR) lies at the heart of safety and security applications in automotive vision systems for driver safety, food and pharmaceutical inspection, civil and military surveillance, night vision applications and environmental monitoring.

This project aims to develop a novel type of low-cost and extremely sensitive photodetector platform to be implemented in CMOS-compatible image sensor arrays for visible and infrared light. The basic building block of the array consists of phototransistors based on a graphene channel with a colloidal quantum dot layer used as a photogating layer. This hybrid system enables very high sensitivities, as well as high photodetection gain with important additional advantages such as its low-cost production and the potential of its integration on thin, transparent and flexible substrates. These hybrid phototransistors are fully compatible with silicon and CMOS technologies, which strongly reduces the cost for the development and production of the detection system as well as the electronics.'

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