MINT

Emerging electronic states and devices based on Mott insulator interfaces

 Coordinatore CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE 

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 Nazionalità Coordinatore France [FR]
 Totale costo 1˙998˙026 €
 EC contributo 1˙998˙026 €
 Programma FP7-IDEAS-ERC
Specific programme: "Ideas" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013)
 Code Call ERC-2013-CoG
 Funding Scheme ERC-CG
 Anno di inizio 2014
 Periodo (anno-mese-giorno) 2014-10-01   -   2019-09-30

 Partecipanti

# participant  country  role  EC contrib. [€] 
1    CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

 Organization address address: Rue Michel -Ange 3
city: PARIS
postcode: 75794

contact info
Titolo: Dr.
Nome: Manuel Alain
Cognome: Bibes
Email: send email
Telefono: +33 169415849
Fax: +33 169415878

FR (PARIS) hostInstitution 1˙998˙026.40
2    CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

 Organization address address: Rue Michel -Ange 3
city: PARIS
postcode: 75794

contact info
Titolo: Ms.
Nome: Véronique
Cognome: Debisschop
Email: send email
Telefono: +33 169823294
Fax: +33 169823333

FR (PARIS) hostInstitution 1˙998˙026.40

Mappa


 Word cloud

Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.

interfaces    interfacial    oxide    correlations    oxides    electronic    forms    superconductivity    physics    phases    multiferroicity    insulators    at    correlated    spin    mint    electron   

 Obiettivo del progetto (Objective)

'Transition metal oxides possess a broad range of functionalities (superconductivity, magnetism, ferroelectricity, multiferroicity) stemming from the interplay between structural effects and electronic correlations. Recent work has revealed exciting physics at their interfaces, including two-dimensional (2D) conductivity and superconductivity in the electron gas that forms at the interface between two band insulators, LaAlO3 and SrTiO3. However, to date, no interfacial system has truly shown electronic properties that are absent from the phase diagram of both bulk constituents. I argue that to fully embrace the immense potential of oxide interfaces and unveil unprecedented electronic phases, combining insulators with stronger electronic correlations is mandatory.

At the crossroad between strongly-correlated electron physics, microelectronics and spintronics, the MINT project will pioneer routes toward a new realm of solid-state physics. MINT will harness electronic and magnetic instabilities in correlated oxides to craft new electronic phases controllable by external stimuli. These phases will be generated by the synergic action of strain engineering, interfacial charge/orbital/spin reconstruction and octahedra connectivity control, using rare-earth titanate RTiO3 Mott-Hubbard insulators as templates.

Emerging states that are foreseen include 2D electron gases with ferroic order, superconductivity at relatively high temperature, topological states and new forms of multiferroicity and magnetoelectric coupling. The discovery of any of these new states would represent a major breakthrough in oxide electronics. They will open possibilities for innovative devices yielding giant electroresistance without ferroelectrics, and new schemes to control spin currents by electric fields.

At full term, MINT will establish whether oxide interfaces will live up to their expectations and start in the coming decades a technological revolution comparable to that of silicon.'

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