CopPeR
Copper Interconnects for Advanced Performance and Reliability
| Coordinatore | TECHNIKON FORSCHUNGS- UND PLANUNGSGESELLSCHAFT MBH
Organization address
address: Burgplatz 3a 3A contact info |
| Nazionalità Coordinatore | Austria [AT] |
| Sito del progetto | http://www.copper-project.eu |
| Totale costo | 4˙692˙486 € |
| EC contributo | 3˙150˙000 € |
| Programma | FP7-ICT
Specific Programme "Cooperation": Information and communication technologies |
| Code Call | FP7-ICT-2007-1 |
| Funding Scheme | CP |
| Anno di inizio | 2008 |
| Periodo (anno-mese-giorno) | 2008-01-01 - 2010-11-30 |
Partecipanti
| # | ||||
|---|---|---|---|---|
| 1 |
TECHNIKON FORSCHUNGS- UND PLANUNGSGESELLSCHAFT MBH
Organization address
address: Burgplatz 3a 3A contact info |
AT (VILLACH) | coordinator | 0.00 |
| 2 |
CORMET OY
Organization address
address: LUUTNANTINTIE 3 A contact info |
FI (HELSINKI) | participant | 0.00 |
| 3 |
ELSYCA NV
Organization address
address: VAARTDIJK 3 BUS 603 contact info |
BE (WIJGMAAL) | participant | 0.00 |
| 4 |
INFINEON TECHNOLOGIES AG
Organization address
address: Am Campeon 1-12 contact info |
DE (Neubiberg) | participant | 0.00 |
| 5 |
KATHOLIEKE UNIVERSITEIT LEUVEN
Organization address
address: Oude Markt contact info |
BE (LEUVEN) | participant | 0.00 |
| 6 |
LAM RESEARCH AG
Organization address
address: SEZ-STRASSE 1 contact info |
AT (VILLACH) | participant | 0.00 |
| 7 |
TECHNISCHE UNIVERSITAET GRAZ
Organization address
address: Rechbauerstrasse contact info |
AT (GRAZ) | participant | 0.00 |
| 8 |
VRIJE UNIVERSITEIT BRUSSEL
Organization address
address: PLEINLAAN contact info |
BE (BRUSSEL) | participant | 0.00 |
Mappa
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Obiettivo del progetto (Objective)
The CopPeR project will provide a novel copper deposition process based on the useof non-aqueous solvents to overcome the limitations of currently employedinterconnect formation processes enabling device scaling beyond the 32 nmtechnology node. This non-aqueous process will open novel routes to implementdirect on barrier plating, focussing on tantalum and ruthenium as diffusion barriers.As another main advantage the process developed and implemented within theCopPeR project will significantly improve the quality of the Cu metallization due to thefact that more space is available in trenches for high quality, low resistivity Cu, due tothe fact that the resistivity limiting seed-Cu will be eliminated and thinner barrier filmscan be applied, e.g. by ALD (atomic layer deposition).CopPeR will achieve the final goal through collaborations within a very strongconsortium based on a team with outstanding scientific, engineering andmanufacturing qualifications. In a first phase, electrolyte ingredients will be selectedand experimentally verified, a deposition cell designed through modelling andsimulation as well as new analytical techniques evaluated to enable adequateanalysis of the deposited films. The second phase will focus on the development ofthe copper deposition process based on the findings from phase one with theadditional support of micro-modelling and the process scaled and integrated into a300mm proof-of-concept. In the third and final phase, the process will be integratedinto a complete interconnect scheme, and optimized according to the industrial chipmanufacturer's needs.