HIGH-EF

Large grained, low stress multi-crystalline silicon thin film solar cells on glass by a novel combined diode laser and solid phase crystallization process

 Coordinatore INSTITUTE OF PHOTONIC TECHNOLOGY E.V. 

 Organization address address: Albert Einstein strasse 9
city: JENA
postcode: 7745

contact info
Titolo: Mr.
Nome: Frank
Cognome: Sondermann
Email: send email
Telefono: -3821
Fax: -3897

 Nazionalità Coordinatore Germany [DE]
 Totale costo 4˙471˙401 €
 EC contributo 2˙864˙560 €
 Programma FP7-ENERGY
Specific Programme "Cooperation": Energy
 Code Call FP7-ENERGY-2007-1-RTD
 Funding Scheme CP-FP
 Anno di inizio 2008
 Periodo (anno-mese-giorno) 2008-01-01   -   2010-12-31

 Partecipanti

# participant  country  role  EC contrib. [€] 
1    INSTITUTE OF PHOTONIC TECHNOLOGY E.V.

 Organization address address: Albert Einstein strasse 9
city: JENA
postcode: 7745

contact info
Titolo: Mr.
Nome: Frank
Cognome: Sondermann
Email: send email
Telefono: -3821
Fax: -3897

DE (JENA) coordinator 0.00
2    ALMA CONSULTING GROUP SAS

 Organization address address: Domaine des Bois d'Houlbec
city: HOULBEC COCHEREL
postcode: 27120

contact info
Titolo: Mr.
Nome: Nicolas
Cognome: Marin
Email: send email
Telefono: -72358001
Fax: -72358002

FR (HOULBEC COCHEREL) participant 0.00
3    CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

 Organization address address: Rue Michel -Ange 3
city: PARIS
postcode: 75794

contact info
Titolo: Mr.
Nome: Denis
Cognome: Fix
Email: send email
Telefono: -88106689
Fax: -88108578

FR (PARIS) participant 0.00
4    CSG SOLAR AG

 Organization address address: Sonnenallee
city: Thalheim
postcode: 6766

contact info
Titolo: Dr.
Nome: Jens
Cognome: Schneider
Email: send email
Telefono: +49 3494 6656 360
Fax: +49 3494 6656 361

DE (Thalheim) participant 0.00
5    EIDGENOESSISCHE MATERIALPRUEFUNGS- UND FORSCHUNGSANSTALT

 Organization address address: Ueberlandstrasse 129
city: DUEBENDORF
postcode: 8600

contact info
Titolo: Dr.
Nome: Johann
Cognome: Michler
Email: send email
Telefono: -2284597
Fax: -2284482

CH (DUEBENDORF) participant 0.00
6    HORIBA JOBIN YVON S.A.S.

 Organization address address: Rue du Canal 16-18
city: LONGJUMEAU
postcode: 91160

contact info
Titolo: Ms.
Nome: Lydie
Cognome: Vinot
Email: send email
Telefono: +33 1 64 54 13 93
Fax: +33 4 64 54 13 67

FR (LONGJUMEAU) participant 0.00
7    MUSZAKI FIZIKAI ES ANYAGTUDOMANYI KUTATOINTEZET - MAGYAR TUDOMANYOS AKADEMIA

 Organization address address: Konkoly Thege Miklos ut 29-33
city: BUDAPEST
postcode: 1121

contact info
Titolo: Ms.
Nome: Vera
Cognome: Somogyi
Email: send email
Telefono: -3922189
Fax: -3922191

HU (BUDAPEST) participant 0.00
8    OCLARO SWITZERLAND AG

 Organization address address: Binzstrasse
city: ZURICH
postcode: 8045

contact info
Nome: Bruno
Cognome: Hoefliger
Email: send email
Telefono: +41 44 455 85 85
Fax: +41 44 455 85 86

CH (ZURICH) participant 0.00

Mappa

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 Word cloud

Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.

micro    competence    solar    standard    gt    good    grains    cm    levels    pv    pure    thin    form    photovoltaic    internal    glass    combined    seed    epitaxial    industrial       ef    spc    defects    line    module    entire    country    extended    thickening    cell    industry    silicon    laser    size       efficient    diodes    film    si    stress    layer    solid    density    crystallisation    grain    scan    efficiencies    crystallization    combination    single   

 Obiettivo del progetto (Objective)

HIGH-EF will provide the silicon thin film photovoltaic (PV) industry with a unique process allowing for high solar cell efficiencies (potential for >10%) by large, low defective grains and low stress levels in the material at competitive production costs. This process is based on a combination of melt-mediated crystallization of an amorphous silicon (a-Si) seed layer (<500 nm thickness) and epitaxial thickening (to >2 µm) of the seed layer by a solid phase crystallization (SPC) process. Melting the a-Si layer and solidifying large grains (about 100 µm) will be obtained by scanning a beam of a diode laser array. Epitaxial thickening of the large grained seed layer (including a pn-junction) is realized by deposition of doped a-Si atop the seed layer and a subsequent SPC process by way of a furnace anneal. Such a combined laser-SPC process represents a major break-through in silicon thin film photovoltaics on glass as it will substantially enhance the grain size and reduce the defect density and stress levels of multi-crystalline thin layers on glass compared e.g. to standard SPC processes on glass, which provide grains less than 10 µm in diameter with a high density of internal extended defects, which all hamper good solar cell efficiencies. It is, however, essential for the industrial laser-SPC implementation that such a process will not be more expensive than the established pure SPC process. A low cost laser processing will be developed in HIGH-EF using highly efficient laser diodes, combined to form a line focus that allows the crystallization of an entire module (e.g. 1.4 m x 1 m in the production line or 30 cm x 39 cm in the research line) within a single scan. Specific attention has been given to identify each competence needed for the success of the project and to identify the relevant partners forming a balanced, multi-disciplinary consortium gathering 7 organizations from 4 different member states with 1 associated country.

Introduzione (Teaser)

New, laser-enhanced crystallisation processes on glass will offer better solar cell efficiency with low silicon consumption.

Descrizione progetto (Article)

The EU-funded HIGH-EF project set out to provide the silicon thin-film photovoltaic (PV) industry with a unique process allowing for high solar cell efficiencies.

Based on the combination of crystallisation and thickening by a solid phase crystallisation (SPC) process, laser SPC is a major breakthrough in silicon thin-film PV on glass since it greatly increases the grain size and reduces the density of defects and stress levels. Standard SPC processes on glass provide smaller grains with a high density of internal extended defects that hinder good solar cell efficiencies.

It was deemed important, however, that the cost of industrial laser SPC implementation should not be more than the pure SPC process. The HIGH-EF project worked on developing low-cost laser processing using highly efficient laser diodes. The goal was to combine these to form a line focus allowing for the crystallisation of an entire module within a single scan.

Attention was focused on identifying each competence needed for the project's success and to select partners to form a multidisciplinary consortium bringing together seven organisations from four Member States and one associated country. All efforts aimed to advance the technology of multicrystalline thin-film silicon solar-cells through the new laser SPC process.

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