ASPECTS
Advanced x-ray photoelectron spectroscopy for high-mobility substrates
| Coordinatore | IBM RESEARCH GMBH
Organization address
address: SAEUMERSTRASSE 4 contact info |
| Nazionalità Coordinatore | Switzerland [CH] |
| Totale costo | 172˙565 € |
| EC contributo | 172˙565 € |
| Programma | FP7-PEOPLE
Specific programme "People" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013) |
| Code Call | FP7-PEOPLE-2009-IEF |
| Funding Scheme | MC-IEF |
| Anno di inizio | 2010 |
| Periodo (anno-mese-giorno) | 2010-07-01 - 2012-06-30 |
Partecipanti
| # | ||||
|---|---|---|---|---|
| 1 |
IBM RESEARCH GMBH
Organization address
address: SAEUMERSTRASSE 4 contact info |
CH (RUESCHLIKON) | coordinator | 172˙565.20 |
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Obiettivo del progetto (Objective)
'In this project an experienced researcher in the field of photoemission spectroscopy will join IBM Research, a global player in information technologies with long standing European research tradition. He will support the effort of the group in developing growth processes for gate stacks on high mobility (III-V) substrates. For this purpose, the fellow will characterize the oxide/semiconductor interfaces and complete gate stacks using a recently installed analysis chamber, connected to a unique molecular beam epitaxy (MBE) cluster tool designed for co-integrating Ge, III-V compounds and oxides thin films on the same 200mm Si substrate. The main objectives of the project are : Objective 1: Assessment of a newly developed wide angle analyzer for in-situ angle resolved XPS on 200mm substrates. A tailored-made XPS system comprising a monochromatic x-ray source and a newly developed wide-angle analyzer for angle resolved measurements will be evaluated and further developed by systematically assessing its performance. The results obtained from the system will be compared with the results obtained by other characterization techniques. Objective 2: Definition of the best materials combinations for gate stacks on high mobility semiconductors. By combining the in-situ, angle-resolved data with data inferred from other state-of-the-art characterization methods, a full picture of different semiconductor /oxide interfaces and gate stacks on high mobility substrate will be drawn. This will enable the fellow to develop a fundamental understanding of the passivation issues on III-V compounds semiconductors.'