ASPECTS

Advanced x-ray photoelectron spectroscopy for high-mobility substrates

Coordinatore	IBM RESEARCH GMBH    more  Organization address address: SAEUMERSTRASSE 4 city: RUESCHLIKON postcode: 8803 contact info Titolo: Ms. Nome: Catherine Cognome: Trachsel Email: send email Telefono: +41 44 724 8289 Fax: +41 44 724 8578
Nazionalità Coordinatore	Switzerland [CH]
Totale costo	172˙565 €
EC contributo	172˙565 €
Programma	FP7-PEOPLE Specific programme "People" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013)
Code Call	FP7-PEOPLE-2009-IEF
Funding Scheme	MC-IEF
Anno di inizio	2010
Periodo (anno-mese-giorno)	2010-07-01   -   2012-06-30

 Partecipanti

#	participant	country	role	EC contrib. [€]
1	IBM RESEARCH GMBH  Organization address address: SAEUMERSTRASSE 4 city: RUESCHLIKON postcode: 8803 contact info Titolo: Ms. Nome: Catherine Cognome: Trachsel Email: send email Telefono: +41 44 724 8289 Fax: +41 44 724 8578	CH (RUESCHLIKON)	coordinator	172˙565.20

Mappa

 Word cloud

Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.

 Obiettivo del progetto (Objective)

'In this project an experienced researcher in the field of photoemission spectroscopy will join IBM Research, a global player in information technologies with long standing European research tradition. He will support the effort of the group in developing growth processes for gate stacks on high mobility (III-V) substrates. For this purpose, the fellow will characterize the oxide/semiconductor interfaces and complete gate stacks using a recently installed analysis chamber, connected to a unique molecular beam epitaxy (MBE) cluster tool designed for co-integrating Ge, III-V compounds and oxides thin films on the same 200mm Si substrate. The main objectives of the project are : Objective 1: Assessment of a newly developed wide angle analyzer for in-situ angle resolved XPS on 200mm substrates. A tailored-made XPS system comprising a monochromatic x-ray source and a newly developed wide-angle analyzer for angle resolved measurements will be evaluated and further developed by systematically assessing its performance. The results obtained from the system will be compared with the results obtained by other characterization techniques. Objective 2: Definition of the best materials combinations for gate stacks on high mobility semiconductors. By combining the in-situ, angle-resolved data with data inferred from other state-of-the-art characterization methods, a full picture of different semiconductor /oxide interfaces and gate stacks on high mobility substrate will be drawn. This will enable the fellow to develop a fundamental understanding of the passivation issues on III-V compounds semiconductors.'