AL-IN-WON

AlGaN and InAlN based microwave components

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 Obiettivo del progetto (Objective)

'This proposal is focused on the development of a new generation of wide band gap (WBG) GaN technology and devices for which strong impacts in term of performances, reliability and robustness are expected. AL-IN-WON will explore two main disrupting routes: - Next generation of WBG device based on new epi material (InAlN/GaN) for strong improvement in term of performances and reliability. - High efficiency / High Power generation in Ku / Ka bands It proposes to evaluate in 2 phases next generation of WBG material up to Ka Band.

The InAlN/GaN heterostructure offers the following advantages:  As InAlN/GaN is lattice matched, it offer the possibility to growth very thin layer in the range of 10nm or below WHICH IS THE MOST RELEVANT to overcome short channel effect AND GO TOWARDS HIGH frequency range up to millimeter wave range.  In0.18 Al0.82N /GaN is a new heterostructure able to give twice the drain current available from a more conventional AlGaN/GaN heterostructure. Breakdown voltage is comparable for the two heterostructures.  In0.18 Al0.82N is latticed matched to GaN and higher reliability is therefore expected compared to AlGaN/GaN.  Passivation is currently a major limitation to device operation. InAlN/GaN MOSHEMT are very promising with strong current drain improvement compared to HEMT (UltraGaN). We plan to evaluate CW Ku and Ka Band MMIC High Power Amplifiers (HPA) and Low Noise Amplifiers (LNA). Demonstrators in Ka band will be designed based on devices coming from the run 2.

The final objective being the evaluation of InAlN/GaN compared to more conventional AlGaN/GaN very high power HEMT technology with very high breakdown voltage, high current and compliant with high power density. Regarding space application for which reliability and robustness are of major concerns, we expect to demonstrate the major breakthrough offered by GaN technology, and especially InAlN if successful.'

Introduzione (Teaser)

Researchers have developed innovative technologies based on gallium nitride to provide more robust performance for space applications. These new devices will enable space research to probe even further into unknown frontiers.

Descrizione progetto (Article)

Given the harsh environment in which they operate, ever-more demanding satellite and space applications call for new technologies to provide maximum power and a long lifespan, with minimum size and weight.

The semi-conductor gallium nitride (GaN) is an ideal candidate for several applications for radiofrequency and microwave systems. It offers noticeable advantages over existing materials in terms of transmitted power level, efficiency, size and robustness.

The EU-funded research project 'AlGaN and InAlN based microwave components' (AL-IN-WON) looked to develop a new generation of wide-band gap (WBG) gallium nitride technology and electronic devices. Development in this field has been dominated until now by the United States and Japan, with European research being fragmented.

The project developed collaboration between ministries of defence, space agencies and technology manufacturers to enable Europe to lead developments of this technology. Together, the project team worked to optimise and test GaN materials and incorporate these into electronic devices.

AL-IN-WON researchers were able to demonstrate a number of major breakthroughs offered by GaN technologies. These include a simplified, highly efficient and robust solid-state power amplifier; smaller, more efficient and powerful antennas; and novel sensors and detectors able to operate in harsh environments.

AL-IN-WON innovations will enable new architectures for telecommunications, navigation and earth-observation equipment, as well as being relevant to applications in other fields.