MOTTPROXIMITY

Electronic properties in the vicinity of a Mott insulator

 Coordinatore TECHNION - ISRAEL INSTITUTE OF TECHNOLOGY 

 Organization address address: TECHNION CITY - SENATE BUILDING
city: HAIFA
postcode: 32000

contact info
Titolo: Mr.
Nome: Mark
Cognome: Davison
Email: send email
Telefono: +972 4 829 3097
Fax: +972 4 823 2958

 Nazionalità Coordinatore Israel [IL]
 Totale costo 100˙000 €
 EC contributo 100˙000 €
 Programma FP7-PEOPLE
Specific programme "People" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013)
 Code Call FP7-PEOPLE-2010-RG
 Funding Scheme MC-IRG
 Anno di inizio 2011
 Periodo (anno-mese-giorno) 2011-03-01   -   2015-02-28

 Partecipanti

# participant  country  role  EC contrib. [€] 
1    TECHNION - ISRAEL INSTITUTE OF TECHNOLOGY

 Organization address address: TECHNION CITY - SENATE BUILDING
city: HAIFA
postcode: 32000

contact info
Titolo: Mr.
Nome: Mark
Cognome: Davison
Email: send email
Telefono: +972 4 829 3097
Fax: +972 4 823 2958

IL (HAIFA) coordinator 100˙000.00

Mappa


 Word cloud

Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.

doping    transition    geometrically    tc    insulators    metallic    superconducting    competing    lattices    inhomogeneity    liquid    frustration    insulator    interactions    electronic    spatial    experiments    orbital    compound    frustrated    magnetic    mott    coulomb    degeneracy    spin   

 Obiettivo del progetto (Objective)

'Metallic compounds with d- and f-wave electrons in their outer-shell tend to have narrow bandwidths, and their electronic properties can be strongly affected by competing Coulomb interactions. When the Coulomb repulsion is strong enough, the system may become a Mott insulator -- a state in which charge is localized due to the interactions. The study of Mott insulators, and of the mechanisms by which their insulating behavior is destroyed, can give us significant insight regarding nearby metallic and superconducting states.

In the first part of this proposal, I focus on the high-Tc superconducting cuprates. The parent compound in these materials is an antiferromagnetic Mott insulator, which becomes a superconductor upon doping. Doping also leads to spatial inhomogeneity at the nanostructure. I will study the effects of spatial inhomogeneity on the bulk electronic properties, as well its relationship to the superconducting temperature Tc.

In the second part of this proposal, I consider itinerant electron systems on geometrically-frustrated lattices. Geometric frustration helps suppress the formation of magnetic order, and can lead to ``spin-liquid' states -- Mott insulators with no competing magnetic order. The need to understand spin-liquid states is made more pressing by the advent of newly developed insulators on geometrically-frustrated lattices. I will focus on two related systems:

a) Recent experiments on the hyperkagome compound Na4Ir3O8 demonstrate a pressure-tuned spin-liquid to metal transition in a three-dimensional system. I will study the nature of such a transition and also study the possible existence of a spin liquid phase with spinon pairing in this compound.

b) Motivated by experiments on FeSc2S4, I will study the effects of orbital degeneracy on the Kugel-Khomskii model on the diamond lattice, with the goal to understand the interplay between orbital degeneracy and geometrical frustration in stabilizing spin-liquid states.'

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