0MSPIN

Spintronics based on relativistic phenomena in systems with zero magnetic moment

Coordinatore	FYZIKALNI USTAV AV CR V.V.I    more Spiacenti, non ci sono informazioni su questo coordinatore. Contattare Fabio per maggiori infomrazioni, grazie.
Nazionalità Coordinatore	Czech Republic [CZ]
Totale costo	1˙938˙000 €
EC contributo	1˙938˙000 €
Programma	FP7-IDEAS-ERC Specific programme: "Ideas" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013)
Code Call	ERC-2010-AdG_20100224
Funding Scheme	ERC-AG
Anno di inizio	2011
Periodo (anno-mese-giorno)	2011-06-01   -   2016-05-31

 Partecipanti

#	participant	country	role	EC contrib. [€]
1	THE UNIVERSITY OF NOTTINGHAM  Organization address address: University Park city: NOTTINGHAM postcode: NG7 2RD contact info Titolo: Mr. Nome: Martin Cognome: Wynne-Jones Email: send email Telefono: 441160000000	UK (NOTTINGHAM)	beneficiary	453˙000.00
2	FYZIKALNI USTAV AV CR V.V.I  Organization address address: NA SLOVANCE 2 city: PRAHA 8 postcode: 18221 contact info Titolo: Dr. Nome: Jan Cognome: Ridky Email: send email Telefono: +420 266 052 121 Fax: +420 286 890 509	CZ (PRAHA 8)	hostInstitution	1˙485˙000.00
3	FYZIKALNI USTAV AV CR V.V.I  Organization address address: NA SLOVANCE 2 city: PRAHA 8 postcode: 18221 contact info Titolo: Prof. Nome: Tomáš Cognome: Jungwirth Email: send email Telefono: +420 220 318 457 Fax: +420 233 343 184	CZ (PRAHA 8)	hostInstitution	1˙485˙000.00

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 Obiettivo del progetto (Objective)

'The 0MSPIN project consists of an extensive integrated theoretical, experimental and device development programme of research opening a radical new approach to spintronics. Spintronics has the potential to supersede existing storage and memory applications, and to provide alternatives to current CMOS technology. Ferromagnetic matels used in all current spintronics applications may make it impractical to realise the full potential of spintronics. Metals are unsuitable for transistor and information processing applications, for opto-electronics, or for high-density integration. The 0MSPIN project aims to remove the major road-block holding back the development of spintronics in a radical way: removing the ferromagnetic component from key active parts or from the whole of the spintronic devices. This approach is based on exploiting the combination of exchange and spin-orbit coupling phenomena and material systems with zero macroscopic moment. The goal of the 0MSPIN is to provide a new paradigm by which spintronics can enter the realms of conventional semiconductors in both fundamental condensed matter research and in information technologies. In the central part of the proposal, the research towards this goal is embedded within a materials science project whose aim is to introduce into physics and microelectronics an entirely new class of semiconductors. 0MSPIN seeks to exploit three classes of material systems: (1) Antiferromagnetic bi-metallic 3d-5d alloys (e.g. Mn2Au). (2) Antiferromagnetic I-II-V semiconductors (e.g. LiMnAs). (3) Non-magnetic spin-orbit coupled semiconductors with injected spin-polarized currents (e.g. 2D III-V structures). Proof of concept devices operating at high temperatures will be fabricated to show-case new functionalities offered by zero-moment systems for sensing and memory applications, information processing, and opto-electronics technologies.'