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NP-SPAD SIGNED

Uncooled Nanopillar Single-Photon Avalanche Diodes (NP-SPADs) at Telecommunication Wavelengths

Total Cost €

0

EC-Contrib. €

0

Partnership

0

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Project "NP-SPAD" data sheet

The following table provides information about the project.

Coordinator
CARDIFF UNIVERSITY 

Organization address
address: NEWPORT ROAD 30-36
city: CARDIFF
postcode: CF24 ODE
website: www.cardiff.ac.uk

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country United Kingdom [UK]
 Total cost 224˙933 €
 EC max contribution 224˙933 € (100%)
 Programme 1. H2020-EU.1.3.2. (Nurturing excellence by means of cross-border and cross-sector mobility)
 Code Call H2020-MSCA-IF-2018
 Funding Scheme MSCA-IF-EF-ST
 Starting year 2020
 Duration (year-month-day) from 2020-01-01   to  2021-12-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    CARDIFF UNIVERSITY UK (CARDIFF) coordinator 224˙933.00

Map

 Project objective

High efficiency detection of single photons at telecommunication wavelengths (notably at 1.55 µm) is critical for emerging technologies, such as free-space and on-fiber quantum information processing, eye-safe and long-distance light detection and ranging (LiDAR), and highly sensitive remote sensing. This research project aims to meet this critical need by developing III-V nanopillar-based uncooled single-photon avalanche diodes (NP-SPADs), which are composed of nanostructured InAsP-InP Geiger-mode avalanche photodiodes (GmAPDs) with self-assembled plasmonic gratings, operating at 1.55 µm. Compared with commercially available InGaAs(P)-InP GmAPDs, the proposed device scheme significantly suppresses thermally generated carriers and trap state population by a factor of 20 to 100 due to the extremely small fill factor of nanopillar arrays (less than 5%). All the while, sufficient optical absorption is maintained via surface plasmon resonance by the plasmonic gratings. The sum combination of these unique capabilities offers the promise of achieving NP-SPADs with free-running mode operation, high photon detection efficiency (PDE; probability of detecting a single photon) of 10 – 20%, low dark count rate (DCR; rate of false detection) of ~50 Hz, and high photon count rate ≥5 MHz. If successful, this approach can drastically stimulate the development and commercialization of high performance semiconductor-based NP-SPADs, putting European Union (EU) at the forefront of cutting-edge technology in single photon detection.

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