MACONS

A multi-microscopy approach to the characterisation of Nitride semiconductors (MACONS)

Coordinatore	THE CHANCELLOR, MASTERS AND SCHOLARS OF THE UNIVERSITY OF CAMBRIDGE    more Spiacenti, non ci sono informazioni su questo coordinatore. Contattare Fabio per maggiori infomrazioni, grazie.
Nazionalità Coordinatore	United Kingdom [UK]
Totale costo	1˙371˙893 €
EC contributo	1˙371˙893 €
Programma	FP7-IDEAS-ERC Specific programme: "Ideas" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013)
Code Call	ERC-2011-StG_20101014
Funding Scheme	ERC-SG
Anno di inizio	2011
Periodo (anno-mese-giorno)	2011-12-01   -   2017-08-31

 Partecipanti

#	participant	country	role	EC contrib. [€]
1	THE CHANCELLOR, MASTERS AND SCHOLARS OF THE UNIVERSITY OF CAMBRIDGE  Organization address address: The Old Schools, Trinity Lane city: CAMBRIDGE postcode: CB2 1TN contact info Titolo: Dr. Nome: Rachel Angharad Cognome: Oliver Email: send email Telefono: +44 1223 760750	UK (CAMBRIDGE)	hostInstitution	1˙371˙893.90
2	THE CHANCELLOR, MASTERS AND SCHOLARS OF THE UNIVERSITY OF CAMBRIDGE  Organization address address: The Old Schools, Trinity Lane city: CAMBRIDGE postcode: CB2 1TN contact info Titolo: Ms. Nome: Renata Cognome: Schaeffer Email: send email Telefono: +44 1223 333543 Fax: +44 1223 332988	UK (CAMBRIDGE)	hostInstitution	1˙371˙893.90

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 Obiettivo del progetto (Objective)

'The commercial market for electronic and optoelectronic devices based on nitride semiconductors is growing extremely fast, but the fundamental science underlying these devices is lagging behind. This proposal aims to explore the vital link between structure and properties in nitride materials, in order to reveal the limitations of current devices and to pave the way for new, improved technology. The key strategy of the proposal is to combine multiple microscopy techniques to develop a comprehensive understanding of nanostructures and defects in the nitrides, and to link these discoveries to nanoscale measurements of the optical and electrical properties. This will require a synergy of different techniques, from techniques commonly used on metals (such as atom-probe tomography) to techniques which focus exclusively on semiconductors (such as scanning capacitance microscopy). It will also require the development of new approaches to the application of these techniques, to allow the same nanoscale regions of material to be assessed in multiple microscopes, so that the structure and composition of a specific nanostructure may be linked directly and unambiguously to its electrical and optical properties. Overall, the aim is to provide a much more complete picture of nitride materials science than has ever previously been achieved, and to apply this new understanding to engineering improved materials for nitride optoelectronic devices.'