Coordinatore | APPLIED MATERIALS TECHNOLOGY LIMITED
Organization address
address: FARRIER ROAD LYDON BUSINESS PARK Units 6-7 contact info |
Nazionalità Coordinatore | United Kingdom [UK] |
Totale costo | 1˙499˙786 € |
EC contributo | 1˙087˙003 € |
Programma | FP7-SME
Specific Programme "Capacities": Research for the benefit of SMEs |
Code Call | FP7-SME-2011 |
Funding Scheme | BSG-SME |
Anno di inizio | 2011 |
Periodo (anno-mese-giorno) | 2011-12-01 - 2013-11-30 |
# | ||||
---|---|---|---|---|
1 |
APPLIED MATERIALS TECHNOLOGY LIMITED
Organization address
address: FARRIER ROAD LYDON BUSINESS PARK Units 6-7 contact info |
UK (LINCOLN) | coordinator | 476˙274.25 |
2 |
NIMESIS TECHNOLOGY
Organization address
address: RUE DES ARTISANS - FRONTIGNY 4 contact info |
FR (MECLEUVES) | participant | 308˙676.70 |
3 |
DYNEX SEMICONDUCTOR LIMITED
Organization address
address: DODDINGTON ROAD contact info |
UK (LINCOLN) | participant | 137˙576.00 |
4 |
H V WOODING LIMITED
Organization address
address: "RANGE ROAD INDUSTRIAL ESTATE, RANGE ROAD" contact info |
UK (HYTHE) | participant | 84˙749.75 |
5 |
MICROPLAST AS
Organization address
address: WESSELS VEG 2 contact info |
NO (STJORDAL) | participant | 79˙726.75 |
6 |
FUNDACION TECNALIA RESEARCH & INNOVATION
Organization address
address: PARQUE TECNOLOGICO DE MIRAMON PASEO MIKELETEGI 2 contact info |
ES (DONOSTIA-SAN SEBASTIAN) | participant | 0.00 |
7 |
NOVAMINA CENTAR INOVATIVNIH TEHNOLOGIJA DOO
Organization address
address: JACKOVINSLI KLANEC 17 contact info |
HR (Zagreb) | participant | 0.00 |
8 |
THE UK MATERIALS TECHNOLOGY RESEARCH INSTITUTE LIMITED
Organization address
address: MIDDLE ASTON HOUSE contact info |
UK (MIDDLE ASTON OXFORDSHIRE) | participant | 0.00 |
Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.
'Through a mixture of applied research and development, the Uni-Pack project will deliver technologies to reduce the manufacturing costs and improve the performance of plastic packaged IGBT (Insulated gate bipolar transistor) modules, in particular those for use in Voltage Source Converters (VSC) for High Voltage Direct Current (HVDC) power transmission. VSC technology enables efficient access to renewable energy sources and economic connection to the electric utilities grid. Trade studies have identified target IGBT module performance parameters for the HVDC market sector and the need to address the influence of gate drive strategies on converter cell/ module performance. Tailoring of IGBT structures for on-state/ switching loss trade-off across each market sector will be demonstrated and applied to develop 4.5KV enhanced DMOS and /or trench IGBT die exhibiting optimum performance for HVDC transmission. Applied research into a high thermal performance low profile package, designed for low inductance and having fully bonded interconnects will deliver step improvements in performance / reliability and reduced manufacturing cost. An important characteristic of the package will be its capability to fail to short circuit, a feature which is highly beneficial in reducing the system costs. A VSC system is currently in the design stage using standard IGBT modules and this will be used as a benchmark to demonstrate and quantify the degree of success.'
Failing stacked switches in voltage source converters (VSCs) can lead to loss of power, causing disruption to processes. New technology provides an innovative route to avoid power losses in the plurality of power transmission and distribution applications.
Cost-effective low-friction SEALS by Texturing During Moulding technology
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