µSAM

Micro Synthetic Jet Actuator Manufacturing

 Coordinatore TECHNISCHE UNIVERSITAET CHEMNITZ 

 Organization address address: STRASSE DER NATIONEN 62
city: CHEMNITZ
postcode: 9111

contact info
Nome: Annett
Cognome: Kempe
Email: send email
Telefono: +49 371 531 12310
Fax: +49 371 531 12319

 Nazionalità Coordinatore Germany [DE]
 Totale costo 299˙226 €
 EC contributo 224˙419 €
 Programma FP7-JTI
Specific Programme "Cooperation": Joint Technology Initiatives
 Code Call SP1-JTI-CS-2010-05
 Funding Scheme JTI-CS
 Anno di inizio 2011
 Periodo (anno-mese-giorno) 2011-12-01   -   2012-11-30

 Partecipanti

# participant  country  role  EC contrib. [€] 
1    TECHNISCHE UNIVERSITAET CHEMNITZ

 Organization address address: STRASSE DER NATIONEN 62
city: CHEMNITZ
postcode: 9111

contact info
Nome: Annett
Cognome: Kempe
Email: send email
Telefono: +49 371 531 12310
Fax: +49 371 531 12319

DE (CHEMNITZ) coordinator 224˙419.50

Mappa


 Word cloud

Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.

bonding    micro    cavity       etched    technologies    pzt    diaphragm    nozzle    etching    velocity    form    bonded    parts    silicon    orifice    wet    structures    small    sja    optimized    mechanical    flow    jet    wafer   

 Obiettivo del progetto (Objective)

'The objective of the project is to develop and manufacture µSJA based on silicon technologies. To reach the required output velocities of the µSJA, the chamber and the exit channel or nozzle will be optimized using different analytic and numeric methods. Based on the results of the optimization, a design will be investigated and transferred to silicon based structures. The production of the µSJA will be performed in the clean rooms of the ZfM and will be realized on wafer-level. The two different parts of the µSJA, the cavity and the diaphragm are micro-machined and wafer bonded in order to form the actuator. The diaphragm-wafer’s backside is wet etched in order to produce a membrane in two different thicknesses, 40 µm and 70 µm. The cavity-wafer in contrast, is prepared by a sequential etching process with the same etchant. In the first step the orifice will be preliminary etched with a depth of 400 µm. The second step equates the continuing etching of the orifice and the production of the cavity geometry. The achievements of these two processes are 3D nozzle structures of the orifice in a required aspect ratio and a very small cavity, resulting in a higher pressure gradient which leads to a much higher jet velocity compared to a dry anisotropic etched orifice combined with a huge cavity. This creates the main advantage compared to known layouts. Then, the two parts are bonded to form a small cavity with an orifice on the one side and a diaphragm on the opposite side. Finally, the piezo disc will be mounted on the back side of the diaphragm into the wet etched cavity. To integrate the electro mechanical transducer, in this case the PZT element, into the system, investigations of reactive bonding technologies for the use of PZT silicon bonding will be done. Thus, the strength of the low temperature bond of the ceramics, concerning low inducted mechanical stress, can be optimized.'

Introduzione (Teaser)

Scientists developed models enabling them to downscale an important flow control device, the synthetic jet, using microtechnology to increase flow velocity while decreasing weight. The technology has applications in aerospace, sensors and electronics.

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