Coordinatore | CONSIGLIO NAZIONALE DELLE RICERCHE
Organization address
address: Piazzale Aldo Moro 7 contact info |
Nazionalità Coordinatore | Italy [IT] |
Sito del progetto | http://synapse.mdm.imm.cnr.it/home.php |
Totale costo | 3˙231˙717 € |
EC contributo | 2˙206˙640 € |
Programma | FP7-NMP
Specific Programme "Cooperation": Nanosciences, Nanotechnologies, Materials and new Production Technologies |
Code Call | FP7-NMP-2012-SMALL-6 |
Funding Scheme | CP-FP |
Anno di inizio | 2012 |
Periodo (anno-mese-giorno) | 2012-12-01 - 2015-11-30 |
# | ||||
---|---|---|---|---|
1 |
CONSIGLIO NAZIONALE DELLE RICERCHE
Organization address
address: Piazzale Aldo Moro 7 contact info |
IT (ROMA) | coordinator | 530˙510.00 |
2 |
MICRON SEMICONDUCTOR ITALIA SRL
Organization address
address: VIA CAMILLO OLIVETTI 2 contact info |
IT (AGRATE BRIANZA) | participant | 309˙175.00 |
3 |
UNIVERSITY COLLEGE CORK, NATIONAL UNIVERSITY OF IRELAND, CORK
Organization address
address: Western Road contact info |
IE (CORK) | participant | 306˙686.00 |
4 |
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
Organization address
address: Rue Michel -Ange 3 contact info |
FR (PARIS) | participant | 286˙354.00 |
5 |
AIR LIQUIDE ELECTRONICS SYSTEMS SA
Organization address
address: RUE COGNACQ JAY 6 contact info |
FR (PARIS) | participant | 272˙160.00 |
6 |
UNIVERSITA' DEGLI STUDI DI MILANO-BICOCCA
Organization address
address: PIAZZA DELL'ATENEO NUOVO 1 contact info |
IT (MILANO) | participant | 266˙480.00 |
7 |
FORSCHUNGSZENTRUM JUELICH GMBH
Organization address
address: Leo-Brandt-Strasse contact info |
DE (JUELICH) | participant | 235˙275.00 |
Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.
'The SYNAPSE project aims at the metalorganic chemical vapor phase deposition (MOCVD) and study of chalcogenide single material, (core) and double material (core-shell) nanowires (NWs), for innovative multi-level phase change memories (PCM). If Ge-Sb-Te is the most studied material for PCM applications, In-based materials, like In-Sb-Te or In-Ge-Te alloys, are also promising, since they are featured by low reset current and high crystallization temperature, paving the way for performing data storage devices even in the automotive field. At the same time, a great attention is currently devoted to the chance to downscale PCM cells by employing chalcogenide NWs. In SYNAPSE, Ge-based and In-based NWs will be first deposited by MOCVD on different substrates and using different bottom-up approaches, the vapor-liquid-solid (VLS) and the selective area growth (SAG). Single material nanowire (SM-NWs) will be in-situ MOCVD-coated by other phase change chalcogenides, to obtain core-shell nanowires (CS-NWs), both free-standing and buried in template matrix. Different material combinations (Ge-Sb-Te/In-Sb-Te/In-GeTe) will be explored in the realization of the CS-NWs, in order to expand the memory level operational features of the obtainable PCM devices. The NW synthesis will be supported by the development and test of precursors for MOCVD. A detailed study of the NW phase switching behavior (reversible amorphous-crystalline transitions) will be carried out and correlated. Special attention will be devoted to the investigation of electrical and thermal properties of the NWs, their phase formation/crystallization dynamics, size-dependent effects and structural/chemical composition. Experimental work will be supported by theoretical modeling and simulation of both crystallization dynamics and electro-thermal behavior. The SYNAPSE consortium is formed by 7 participants (5 academic/research centers and 2 industries) from Italy (3), France (2), Germany (1) and Ireland (1).'
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