HYSSOP

HYbrid III-V/Silicon laSer for the future generation of Photonic integrated circuits

 Coordinatore III V LAB GIE 

 Organization address address: ROUTE DE NOZAY
city: MARCOUSSIS
postcode: 91460

contact info
Titolo: Dr.
Nome: Denis
Cognome: Mazerolle
Email: send email
Telefono: +33 1 33776893

 Nazionalità Coordinatore France [FR]
 Totale costo 194˙046 €
 EC contributo 194˙046 €
 Programma FP7-PEOPLE
Specific programme "People" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013)
 Code Call FP7-PEOPLE-2012-IEF
 Funding Scheme MC-IEF
 Anno di inizio 2013
 Periodo (anno-mese-giorno) 2013-03-01   -   2015-02-28

 Partecipanti

# participant  country  role  EC contrib. [€] 
1    III V LAB GIE

 Organization address address: ROUTE DE NOZAY
city: MARCOUSSIS
postcode: 91460

contact info
Titolo: Dr.
Nome: Denis
Cognome: Mazerolle
Email: send email
Telefono: +33 1 33776893

FR (MARCOUSSIS) coordinator 194˙046.60

Mappa


 Word cloud

Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.

cavities    active    light    modulators    integration    si    tremendous    hybrid    sources    optical    electro    generation    feasibility    noise    quantum    dash    silicon    lasers    wdm    ultra    optic    functions    photonics   

 Obiettivo del progetto (Objective)

'The present project embraces the field of Silicon Photonics, which is expected to play a major role in the future of information and communication technology systems, especially datacenter interconnections, telecom infrastructures and consumer electronics interfaces. Silicon photonics has recently gained a tremendous amount of interest as a means to realize highly integrated optical devices and subsystems. The optical signal is guided in a silicon strip surrounded by silicon-dioxide. The high index contrast between these materials enables the realization of ultra-compact integrated optical devices. Active functions such as electro-optic modulators and detectors can be integrated and an ultra-tight integration of electrical and optical functions is fundamentally achievable. Tremendous advances were made in silicon photonics, demonstrating devices such as wavelength division multiplexing (WDM) filters and electro-optic modulators. However, practical Si-based light sources are still missing today. Such sources constitute the main technological roadblock hindering the development of silicon photonics based systems.

The overall objective of the present project is to demonstrate the feasibility of III-V/Si lasers complying with the needs of the future generation of photonic integrated circuits. The mainstream approach is based on the development of quantum dash sources with disruptive performances in terms of power efficiency, noise and thermal stability, explored in conjunction with hybrid integration on a silicon-based platform.

A staged approach based on four main technical objectives is proposed: 1) Demonstrate the feasibility of WDM transmission using hybrid lasers based on quantum dash active material. 2) Demonstrate the use of long silicon passive cavities for low-noise light generation. 3) Demonstrate the use of high-Q cavities for low noise light generation. 4) Demonstrate low time jitter hybrid mode-locked sources with pulse repetition rates in the GHz range.'

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