III-V-MOS
Technology CAD for III-V Semiconductor-based MOSFETs
| Coordinatore | CONSORZIO NAZIONALE INTERUNIVERSITARIO PER LA NANOELETTRONICA
Organization address
address: VIA TOFFANO 2 contact info |
| Nazionalità Coordinatore | Italy [IT] |
| Totale costo | 4˙336˙961 € |
| EC contributo | 2˙900˙000 € |
| Programma | FP7-ICT
Specific Programme "Cooperation": Information and communication technologies |
| Code Call | FP7-ICT-2013-11 |
| Funding Scheme | CP |
| Anno di inizio | 2013 |
| Periodo (anno-mese-giorno) | 2013-11-01 - 2016-10-31 |
Partecipanti
| # | ||||
|---|---|---|---|---|
| 1 |
CONSORZIO NAZIONALE INTERUNIVERSITARIO PER LA NANOELETTRONICA
Organization address
address: VIA TOFFANO 2 contact info |
IT (BOLOGNA) | coordinator | 0.00 |
| 2 |
ALMA MATER STUDIORUM-UNIVERSITA DI BOLOGNA
Organization address
address: Via Zamboni contact info |
IT (BOLOGNA) | participant | 0.00 |
| 3 |
EIDGENOESSISCHE TECHNISCHE HOCHSCHULE ZURICH
Organization address
address: Raemistrasse contact info |
CH (ZUERICH) | participant | 0.00 |
| 4 |
GLOBALFOUNDRIES Dresden Module One LLC & Co. KG
Organization address
address: Wilschdorfer Landstrasse contact info |
DE (Dresden) | participant | 0.00 |
| 5 |
IBM RESEARCH GMBH
Organization address
address: SAEUMERSTRASSE contact info |
CH (RUESCHLIKON) | participant | 0.00 |
| 6 |
INSTITUT SINANO ASSOCIATION
Organization address
address: Parvis Louis Neel contact info |
FR (Grenoble) | participant | 0.00 |
| 7 |
INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW
Organization address
address: Kapeldreef contact info |
BE (LEUVEN) | participant | 0.00 |
| 8 |
QuantumWise A/S
Organization address
address: LERSO PARKALLE contact info |
DK (Copenhagen) | participant | 0.00 |
| 9 |
SYNOPSYS SWITZERLAND LLC
Organization address
address: Thurgauerstrasse contact info |
CH (ZURICH) | participant | 0.00 |
| 10 |
UNIVERSITA DEGLI STUDI DI MODENA E REGGIO EMILIA
Organization address
address: VIA UNIVERSITA contact info |
IT (MODENA) | participant | 0.00 |
| 11 |
UNIVERSITA DEGLI STUDI DI UDINE
Organization address
address: VIA PALLADIO contact info |
IT (UDINE) | participant | 0.00 |
Mappa
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Obiettivo del progetto (Objective)
According to ITRS, III-V compound semiconductor n-type MOSFETs will reach production in 2018 as part of a new scaling scenario for high performance at very low voltage. The present lack of dependable TCAD models for the early stages of industrial development is a hindrance to benefit from the cost saves and time to market reduction that TCAD is recognized to deliver. To bridge this gap, III-V-MOS aims to provide to the European Semiconductor Industry accurate device simulation models and methods, integrated into TCAD tools, for successful introduction in CMOS technology of optimized device designs based on III-V MOSFETs at and beyond the 14nm node. III-V-MOS will develop, validate and transfer to industry a new device simulation methodology enabling the use of accurate quantum drift-diffusion and Monte Carlo TCAD tools. The models, calibrated by comparison with measurements on complete devices and ad-hoc test structures, will provide comprehensive descriptions of Ultra Thin Body Semiconductor on Insulator FETs, FinFETs and nanowire FETs at and beyond the 14nm node including device parasitics. A hierarchical approach will be used, starting from atomistic band structure calculations all the way down to customized TCAD simulation setups ready for direct use in an industrial environment.Systematic application of the new methodology under industrial guidance will provide new insight in nanoscale III-V semiconductor device physics and identify the potential of the technology boosters, thus substantially reducing the options to be explored for the device design and the corresponding costs. Future exploitation and high impact of the project results are guaranteed by the TCAD market leader (Synopsys); by a SME specialized in the growing business of atomistic simulations for technology development (QuantumWise); by a research center (IMEC) and an industry lab (IBM) engaged in CMOS fabrication technology development and by the European foundry GLOBALFOUNDRIES Dresden.