QURAM

A Quantum RAM Using Superconducting Circuits and Donors in Silicon

 Coordinatore UNIVERSITY COLLEGE LONDON 

 Organization address address: GOWER STREET
city: LONDON
postcode: WC1E 6BT

contact info
Titolo: Mr.
Nome: Giles
Cognome: Machell
Email: send email
Telefono: +44 20 3108 3020
Fax: +44 20 7813 2849

 Nazionalità Coordinatore United Kingdom [UK]
 Totale costo 221˙606 €
 EC contributo 221˙606 €
 Programma FP7-PEOPLE
Specific programme "People" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013)
 Code Call FP7-PEOPLE-2013-IIF
 Funding Scheme MC-IIF
 Anno di inizio 2014
 Periodo (anno-mese-giorno) 2014-03-01   -   2016-02-29

 Partecipanti

# participant  country  role  EC contrib. [€] 
1    UNIVERSITY COLLEGE LONDON

 Organization address address: GOWER STREET
city: LONDON
postcode: WC1E 6BT

contact info
Titolo: Mr.
Nome: Giles
Cognome: Machell
Email: send email
Telefono: +44 20 3108 3020
Fax: +44 20 7813 2849

UK (LONDON) coordinator 221˙606.40

Mappa


 Word cloud

Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.

silicon    spins    isotopically    spin    memory    nuclear    computers    superconducting    quantum   

 Obiettivo del progetto (Objective)

'Quantum computers are devices poised to revolutionise aspects of society from fundamental science and medical research to national security. Superconducting circuits hold great promise for the development of large-scale quantum computers. However, superconducting processors currently lack a suitable memory element for the long-term storage of quantum information. The electron and nuclear spins of dopant atoms in silicon could provide a potential solution. Silicon can be isotopically purified in a nuclear spin-zero form, allowing exceptionally long spin coherence times. This research seeks to develop a quantum random access memory (quRAM), by storing the states from superconducting quantum bits in donor spins inside an isotopically enriched silicon chip.'

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