DOTFIVE
Towards 0.5 Terahertz Silicon/Germanium Heterojunction Bipolar Technology
| Coordinatore | STMICROELECTRONICS S.A.
Organization address
address: FTM - Rue Jean Monnet 850 contact info |
| Nazionalità Coordinatore | France [FR] |
| Totale costo | 14˙740˙480 € |
| EC contributo | 9˙699˙969 € |
| Programma | FP7-ICT
Specific Programme "Cooperation": Information and communication technologies |
| Code Call | FP7-ICT-2007-1 |
| Funding Scheme | CP |
| Anno di inizio | 2008 |
| Periodo (anno-mese-giorno) | 2008-02-01 - 2011-07-31 |
Partecipanti
| # | ||||
|---|---|---|---|---|
| 1 |
STMICROELECTRONICS S.A.
Organization address
address: FTM - Rue Jean Monnet 850 contact info |
FR (CROLLES) | coordinator | 0.00 |
| 2 |
ALMA CONSULTING GROUP SAS
Organization address
address: Domaine des Bois d'Houlbec contact info |
FR (HOULBEC COCHEREL) | participant | 0.00 |
| 3 |
BERGISCHE UNIVERSITAET WUPPERTAL
Organization address
address: GAUSS-STRASSE contact info |
DE (WUPPERTAL) | participant | 0.00 |
| 4 |
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
Organization address
address: Rue Michel -Ange contact info |
FR (PARIS) | participant | 0.00 |
| 5 |
IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUER INNOVATIVE MIKROELEKTRONIK
Organization address
address: IM TECHNOLOGIEPARK contact info |
DE (FRANKFURT (ODER)) | participant | 0.00 |
| 6 |
INFINEON TECHNOLOGIES AG
Organization address
address: Am Campeon 1-12 contact info |
DE (Neubiberg) | participant | 0.00 |
| 7 |
Institut polytechnique de Bordeaux
Organization address
address: RUE ROBERT ESCARPIT contact info |
FR (PESSAC) | participant | 0.00 |
| 8 |
INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW
Organization address
address: Kapeldreef contact info |
BE (LEUVEN) | participant | 0.00 |
| 9 |
STMICROELECTRONICS CROLLES 2 SAS
Organization address
address: RUE JEAN MONNET 850 contact info |
FR (CROLLES) | participant | 0.00 |
| 10 |
TECHNISCHE UNIVERSITAET DRESDEN
Organization address
address: HELMHOLTZSTRASSE contact info |
DE (DRESDEN) | participant | 0.00 |
| 11 |
UNIVERSITA DEGLI STUDI DI NAPOLI FEDERICO II.
Organization address
address: Corso Umberto I contact info |
IT (NAPOLI) | participant | 0.00 |
| 12 |
UNIVERSITAET DER BUNDESWEHR MUENCHEN.
Organization address
address: Werner-Heisenberg-Weg contact info |
DE (NEUBIBERG) | participant | 0.00 |
| 13 |
UNIVERSITAET LINZ
Organization address
address: ALTENBERGERSTRASSE 69 contact info |
AT (LINZ) | participant | 0.00 |
| 14 |
UNIVERSITAET SIEGEN
Organization address
address: HERRENGARTEN contact info |
DE (SIEGEN) | participant | 0.00 |
| 15 |
UNIVERSITE DE BORDEAUX I
Organization address
address: 351 Cours de la Liberation contact info |
FR (TALENCE) | participant | 0.00 |
| 16 |
UNIVERSITE PARIS-SUD
Organization address
address: Rue Georges Clemenceau contact info |
FR (ORSAY) | participant | 0.00 |
| 17 |
XMOD TECHNOLOGIES
Organization address
address: PARC SCIENTIFIQUE UNITEC 2,DOMAINE DU HAUT CARRE contact info |
FR (TALENCE) | participant | 0.00 |
Mappa
Word cloud
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Obiettivo del progetto (Objective)
DOTFIVE is a three-year IP proposal for a very ambitious project focused on advanced RTD activities necessary to move the Silicon/germanium heterojunction bipolar transistor (HBT) into the operating frequency range of 0.5 terahertz (THz) (500 gigahertz GHz) enabling the future development of communication, imaging or radar Integrated Circuits (IC) working at frequencies up to 160 GHz . For a given lithography node bipolar transistors and more recently HBT have always lead the frequency race compared to MOS devices, while offering higher power density and better analogue performances (transconductance, noise, transistor matching).The main objective of this highly qualified consortium is to establish a leadership position for the European semiconductor industry in the area of millimeter wave (mmW) by research and development work on silicon based transistor devices and circuit design capabilities and know-how. SiGe HBT is a key reliable device for applications requiring power > few mW (future MOS limitation) and enabling high density, low cost integration compared to III-V. To achieve the goal DOTFIVE unites a powerful consortium:Seven academic partners for the physics understanding of nanotransistors, simulation, modeling, and characterization (down to few k) of devices; as well as the design and characterization of demonstrator electronic blocks (Low Noise Amplifier, mixers...).Two research institutes in charge of developing novel process modules and transistor structures on silicon wafers, capable of fabricating innovative SiGe HBT concepts.Two industrial companies, capable of producing 250 GHz HBT on silicon, and willing to push their capabilities to 500 GHz by incremental structural and technological improvements utilizing some of the most advanced equipments introduced recently by the CMOS miniaturization race. Two SME capable to deliver to designers, transistor parameter extraction and RF advanced compact models for all the silicon providers above.