MARISE
Materials for Avalanche Receiver for ultImate SEnsitivity
| Coordinatore |
Organization address
address: ROUTE DE NOZAY contact info |
| Nazionalità Coordinatore | Non specificata |
| Totale costo | 0 € |
| EC contributo | 0 € |
| Programma | FP7-ICT
Specific Programme "Cooperation": Information and communication technologies |
| Anno di inizio | 2008 |
| Periodo (anno-mese-giorno) | 2008-05-01 - 2011-07-31 |
Partecipanti
| # | ||||
|---|---|---|---|---|
| 1 |
III V LAB GIE
Organization address
address: ROUTE DE NOZAY contact info |
FR (MARCOUSSIS) | coordinator | 0.00 |
| 2 |
ADVEOTEC SAS
Organization address
address: 54 H BOULEVARD ARISTIDE BRIAND contact info |
FR (MELUN) | participant | 0.00 |
| 3 |
ID QUANTIQUE SA
Organization address
address: CHEMIN DE LA MARBRERIE contact info |
CH (CAROUGE GENEVE) | participant | 0.00 |
| 4 |
INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW
Organization address
address: Kapeldreef contact info |
BE (LEUVEN) | participant | 0.00 |
| 5 |
THE UNIVERSITY OF SHEFFIELD
Organization address
address: FIRTH COURT WESTERN BANK contact info |
UK (SHEFFIELD) | participant | 0.00 |
Mappa
Word cloud
Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.
Obiettivo del progetto (Objective)
Avalanche photodiodes are key components for many applications (telecom, ranging, sensing, spectroscopy,...) because their internal gain improves the photoreceiver sensitivity considerably. Two III-V materials of interest have emerged: AlGaAs and AlInAs, lattice-matched to GaAs and InP, respectively, and both characterised by a wide bandgap. In recent years, a breakthrough in the impact ionisation characteristics was identified and the major importance of a thin avalanche multiplication layer was clearly demonstrated.nMARISE ambition is aiming to develop innovative engineered APD components with thin avalanche layers to benefit from their promising characteristics likely to advance the present state of the art. MARISE objectives are to push the limits of the new APDs in two directions: speed and sensitivity.nFor 10Gb/s access and single photon detection, AlInAs/GaInAs will be developed exhibiting low dark current and high responsivity,nThe development of a very challenging evanescent waveguide APD structure in the same material system will allow for 40Gb/s operation with a record gain-bandwidth product of 200 GHz.nAlGaAs will be combined with a GaInAsN absorber into an innovative, very low noise and potentially low cost GaAs-based APD, suitable for 1.3 µm telecom applications.nIn MARISE, the APDs characteristics will be thoroughly assessed, and their suitability will be investigated for the following large-scale applications:n· 10Gb/s burst-mode photoreceivers for broadband access and local area networks,n· Core networks receivers at 40Gb/s based on waveguide APDs,n· Single photon detection for use in secure communications.nFor each application, the impact of improved APD performance will be demonstrated in terms of increased receiver sensitivity and bandwidth, extended network performance, power budget or splitting factor.