EUSIC

High Quality European GaN-Wafer on SiC Substrates for Space Applications

Coordinatore	SiCrystal AG    more  Organization address address: THURN UND TAXIS STRASSE 20 city: NURNBERG postcode: 90411 contact info Titolo: Mr. Nome: Roland Cognome: Reichstein Email: send email Telefono: +499131 40 000 202 Fax: +499131 40 000 100
Nazionalità Coordinatore	Germany [DE]
Totale costo	3˙282˙694 €
EC contributo	1˙989˙426 €
Programma	FP7-SPACE Specific Programme "Cooperation": Space
Code Call	FP7-SPACE-2009-1
Funding Scheme	CP
Anno di inizio	2010
Periodo (anno-mese-giorno)	2010-11-01   -   2013-10-31

 Partecipanti

#	participant	country	role	EC contrib. [€]
1	SiCrystal AG  Organization address address: THURN UND TAXIS STRASSE 20 city: NURNBERG postcode: 90411 contact info Titolo: Mr. Nome: Roland Cognome: Reichstein Email: send email Telefono: +499131 40 000 202 Fax: +499131 40 000 100	DE (NURNBERG)	coordinator	852˙781.80
2	LINKOPINGS UNIVERSITET  Organization address address: CAMPUS VALLA city: LINKOPING postcode: 581 83 contact info Titolo: Prof. Nome: Göran Cognome: Hansson Email: send email Telefono: +46 13 281259 Fax: +46 13 137568	SE (LINKOPING)	participant	318˙850.00
3	FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V  Organization address address: Hansastrasse 27C city: MUENCHEN postcode: 80686 contact info Titolo: Ms. Nome: Andrea Cognome: Zeumann Email: send email Telefono: 498912000000 Fax: 498912000000	DE (MUENCHEN)	participant	297˙691.00
4	III V LAB GIE  Organization address address: ROUTE DE NOZAY city: MARCOUSSIS postcode: 91460 contact info Titolo: Dr. Nome: Denis Cognome: Mazerolle Email: send email Telefono: +33 (0)1 30 77 68 93 Fax: +33 (0)1 30 77 67 86	FR (MARCOUSSIS)	participant	295˙412.00
5	UNITED MONOLITHIC SEMICONDUCTORS GMBH  Organization address address: WILHELM-RUNGE-STRASSE 11 city: ULM postcode: 89081 contact info Titolo: Dr. Nome: Michael Cognome: Buchta Email: send email Telefono: +49 731 505 3081 Fax: +49 731 505 3005	DE (ULM)	participant	224˙691.20

Mappa

 Word cloud

Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.

 Obiettivo del progetto (Objective)

'The project „ High Quality European GaN-Wafer on SiC Substrates for Space Applications” (EuSiC) is aiming at establishing an independent, purely European sustainable supply chain for Gallium Nitride (GaN) based space technologies. The project will significantly reduce the dependence on critical technologies and capabilities from outside Europe for future space applications. An independent supply chain has to include countries of the European Community (EC): a supplier of high-quality semi-insulating Silicon Carbide (SiC) substrates, qualified sources to perform GaN epitaxial layers and as well manufacturers with leading knowledge in GaN device technology required e.g. for Monolithic Microwave Integrated Circuits (MMIC’s). At present, the missing link in this chain is a reliable source for high-quality 3 inch semi-insulating SiC substrates in Europe. The intention of this project is to improve the quality of semi-insulating SiC-substrates at SiCrystal AG, the leading manufacturer of SiC substrates in Europe. The provided substrates shall be analyzed and evaluated by epi-growth specialists IAF, III-V-Lab, and QinetiQ. Finally devices shall be built and verified on the created GaN epi-wafers by UMS. Continuous monitoring and several feedback loops to the quality of the substrates will enable an accelerated development at SiCrystal AG. Also impacts to improvement of the performance of GaN devices are expected. The project will complement activities already undertaken by European Space Agency ESA, who has assembled a consortium of competent partners under the: GaN Reliability Enhancement and Technology Transfer Initiative (GREAT2).'