MASTIC

Multi Atomistic Monte Carlo Simulation of Technologically Important Crystals

 Coordinatore FUNDACION IMDEA MATERIALES 

 Organization address address: CALLE ERIC KANDEL 2 PARQUE CIENTIFICO Y TECNOLOGICO TECNOGETAFE
city: GETAFE
postcode: 28906

contact info
Titolo: Mr.
Nome: Miguel ángel
Cognome: Rodiel
Email: send email
Telefono: 34915493422

 Nazionalità Coordinatore Spain [ES]
 Totale costo 100˙000 €
 EC contributo 100˙000 €
 Programma FP7-PEOPLE
Specific programme "People" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013)
 Code Call FP7-PEOPLE-2011-CIG
 Funding Scheme MC-CIG
 Anno di inizio 2011
 Periodo (anno-mese-giorno) 2011-08-01   -   2015-07-31

 Partecipanti

# participant  country  role  EC contrib. [€] 
1    FUNDACION IMDEA MATERIALES

 Organization address address: CALLE ERIC KANDEL 2 PARQUE CIENTIFICO Y TECNOLOGICO TECNOGETAFE
city: GETAFE
postcode: 28906

contact info
Titolo: Mr.
Nome: Miguel ángel
Cognome: Rodiel
Email: send email
Telefono: 34915493422

ES (GETAFE) coordinator 100˙000.00

Mappa


 Word cloud

Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.

microelectronics    reactor    transistors    improves    sige    techniques    sic    models    okmc    material    materials    implantation    lkmc    defects    fusion    fecr    si   

 Obiettivo del progetto (Objective)

'In order to continue with the size reduction of transistors it is necessary to use complex implantation conditions such as amorphizing implants. Models predicting the resulting dopant profile reduce the number of experiments necessary to design the best process to obtain the desired properties. In the case of development of materials for fusion applications, models are crucial since, as of today, there are no experimental facilities to reproduce the same conditions that the materials will withstand in a fusion reactor. Therefore, extrapolations must be made from different irradiation conditions (fission reactors or ion implantation). These materials are different, but the basic mechanisms are the same: production of defects, diffusion of these defects and interaction with other defects, impurities or the material microstructure. In the case of microelectronics these effects must be followed for a time scale of minutes, while in fusion it is necessary to model years of operation. Using the atomistic Object and Lattice Kinetic Monte Carlo techniques (OKMC, LKMC), tools that can achieve the scales and ranges involved, this project improves the scientific understanding, generates efficient models for technology development and provides a simulation workbench to optimize the use of SiGe, SiC (microelectronics) and Fe, FeCr (nuclear). Several atomic configurations will be included in LKMC to study the amorphous/crystalline transitions of Si-based materials and the formation of defective crystals during the transition. Binary alloys will be included in a OKMC scenario to study the evolution of defects under different conditions, to be used for SiC, SiGe and FeCr materials. Finally, parallelization techniques will improve the scope of KMC applications. The knowledge gain with this project improves the performance of last generation Si-based transistors, and the use of FeCr as a blanket material in the ITER and future DEMO project as well as other fusion reactor concepts.'

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