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PowerBase

Enhanced substrates and GaN pilot lines enabling compact power applications

Total Cost €

EC-Contrib. €

Partnership

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Outcomes and
results

PowerBase project word cloud

Explore the words cloud of the PowerBase project. It provides you a very rough idea of what is the project "PowerBase" about.

union core expressed economic keeping area primary vision styria plan qualified excellent enhanced pilot regions embedding carinthia supporting line semiconductor strategic efficiency bavaria supply expanding spans limits tech powerbase smart bridging micro austria markets supports material raw market forefront jobs expand chain annual leaders semiconductors components employment domains gan germany substrates sachsen countries innovative innovation assembly compatible 2014 industrial lines materials committed silicon automation technological mart gap nano electronics electronic ecsel compact consist vertical representing substrate expertise ambition band demonstrating creation societal chip domain background manufacturing contributions setting technologies ecs power positioning clear action goals competences

Project "PowerBase" data sheet

The following table provides information about the project.

Coordinator	INFINEON TECHNOLOGIES AUSTRIA AG Organization address address: SIEMENSSTRASSE 2 city: VILLACH postcode: 9500 website: www.infineon.com/austria contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.
Coordinator Country	Austria [AT]
Project website	http://www.powerbase-project.eu
Total cost	90˙254˙494 €
EC max contribution	19˙196˙548 € (21%)
Programme	1. H2020-EU.2.1.1.7. (ECSEL)
Code Call	ECSEL-2014-2
Funding Scheme	ECSEL-IA
Starting year	2015
Duration (year-month-day)	from 2015-05-01 to 2018-06-30

Partnership

Take a look of project's partnership.

#	participants	country	role	EC contrib. [€]
1	INFINEON TECHNOLOGIES AUSTRIA AG INFINEON TECHNOLOGIES AUSTRIA AG Organization address address: SIEMENSSTRASSE 2 city: VILLACH postcode: 9500 website: www.infineon.com/austria contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	AT (VILLACH)	coordinator	2˙546˙241.00
2	INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM Organization address address: KAPELDREEF 75 city: LEUVEN postcode: 3001 website: www.imec.be contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	BE (LEUVEN)	participant	5˙990˙663.00
3	INFINEON TECHNOLOGIES DRESDEN GMBH& CO KG INFINEON TECHNOLOGIES DRESDEN GMBH& CO KG Organization address address: KONIGSBRUCKER STRASSE 180 city: DRESDEN postcode: 1099 website: www.infineon.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (DRESDEN)	participant	1˙630˙785.00
4	INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG Organization address address: AM CAMPEON 1-15 city: NEUBIBERG postcode: 85579 website: www.infineon.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (NEUBIBERG)	participant	1˙519˙911.00
5	AMS AG AMS AG Organization address address: TOBELBADERSTRASSE 30 city: UNTERPREMSTAETTEN postcode: 8141 website: www.ams.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	AT (UNTERPREMSTAETTEN)	participant	875˙669.00
6	SILTRONIC AG SILTRONIC AG Organization address address: HANNS SEIDEL PLATZ 4 city: MUNCHEN postcode: 81737 website: www.siltronic.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (MUNCHEN)	participant	621˙616.00
7	INFINEON TECHNOLOGIES ITALIA SRL INFINEON TECHNOLOGIES ITALIA SRL Organization address address: VIA DEI VALTORTA 48 city: MILAN0 postcode: 20127 website: www.infineon.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	IT (MILAN0)	participant	510˙859.00
8	EPIGAN NV EPIGAN NV Organization address address: Kempische Steenweg 293 city: Hasselt postcode: 3500 website: www.epigan.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	BE (Hasselt)	participant	503˙902.00
9	ELTEK AS ELTEK AS Organization address address: Graterudveien 8 city: Drammen postcode: 3036 website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	NO (Drammen)	participant	378˙503.00
10	FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. Organization address address: HANSASTRASSE 27C city: MUNCHEN postcode: 80686 website: www.fraunhofer.de contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (MUNCHEN)	participant	350˙585.00
11	UNIVERSITA DEGLI STUDI DI PADOVA UNIVERSITA DEGLI STUDI DI PADOVA Organization address address: VIA 8 FEBBRAIO 2 city: PADOVA postcode: 35122 website: www.unipd.it contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	IT (PADOVA)	participant	349˙456.00
12	BESI AUSTRIA GMBH BESI AUSTRIA GMBH Organization address address: INNSTRASSE 16 city: RADFELD postcode: 6240 website: www.besi.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	AT (RADFELD)	participant	226˙762.00
13	TRYMAX SEMICONDUCTOR EQUIPMENT BV TRYMAX SEMICONDUCTOR EQUIPMENT BV Organization address address: ROGGEWEG 26 B city: NIJMEGEN postcode: 6534 AJ website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	NL (NIJMEGEN)	participant	222˙495.00
14	TECHNISCHE UNIVERSITAET DRESDEN TECHNISCHE UNIVERSITAET DRESDEN Organization address address: HELMHOLTZSTRASSE 10 city: DRESDEN postcode: 1069 website: http://www.tu-dresden.de/ contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (DRESDEN)	participant	220˙690.00
15	NAMLAB GGMBH NAMLAB GGMBH Organization address address: NOTHNITZER STRASSE 64 city: DRESDEN postcode: 1187 website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (DRESDEN)	participant	216˙542.00
16	FREIBERGER COMPOUND MATERIALS GMBH FREIBERGER COMPOUND MATERIALS GMBH Organization address address: AM JUNGER LOWE SCHACHT 5 city: FREIBERG postcode: 9599 website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (FREIBERG)	participant	203˙538.00
17	FRONIUS INTERNATIONAL GMBH FRONIUS INTERNATIONAL GMBH Organization address address: FRONIUSSTRASSE 1 city: PETTENBACH postcode: 4643 website: www.fronius.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	AT (PETTENBACH)	participant	201˙709.00
18	NANOFOCUS AG NANOFOCUS AG Organization address address: MAX PLANCK RING 48 city: OBERHAUSEN postcode: 46049 website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (OBERHAUSEN)	participant	200˙762.00
19	FOR OPTIMAL RENEWABLE ENERGY SYSTEMS SL FOR OPTIMAL RENEWABLE ENERGY SYSTEMS SL Organization address address: CALLE CELSA 17 NAVE 13 A city: ZARAGOZA postcode: 50197 website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	ES (ZARAGOZA)	participant	190˙218.00
20	GREEN POWER TECHNOLOGIES SL GREEN POWER TECHNOLOGIES SL Organization address address: AVENIDA CAMAS PG PIBO 28 city: BOLLULLOS DE LA MITACION SEVILLA postcode: 41110 website: www.greenpower.es contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	ES (BOLLULLOS DE LA MITACION SEVILLA)	participant	171˙478.00
21	UNIVERSITETET I OSLO UNIVERSITETET I OSLO Organization address address: PROBLEMVEIEN 5-7 city: OSLO postcode: 313 website: www.uio.no contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	NO (OSLO)	participant	171˙159.00
22	Besi Netherlands BV Besi Netherlands BV Organization address address: RATIO 6 city: DUIVEN postcode: 6921 RW website: www.besi.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	NL (DUIVEN)	participant	166˙153.00
23	AGENCIA ESTATAL CONSEJO SUPERIOR DEINVESTIGACIONES CIENTIFICAS AGENCIA ESTATAL CONSEJO SUPERIOR DEINVESTIGACIONES CIENTIFICAS Organization address address: CALLE SERRANO 117 city: MADRID postcode: 28006 website: http://www.csic.es contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	ES (MADRID)	participant	155˙537.00
24	KAI KOMPETENZZENTRUM AUTOMOBIL - UND INDUSTRIEELEKTRONIK GMBH KAI KOMPETENZZENTRUM AUTOMOBIL - UND INDUSTRIEELEKTRONIK GMBH Organization address address: EUROPASTRASSE 8 city: VILLACH ST MAGDALEN postcode: 9524 website: www.k-ai.at contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	AT (VILLACH ST MAGDALEN)	participant	144˙101.00
25	FABMATICS GMBH FABMATICS GMBH Organization address address: ZUR STEINHOEHE 1 city: DRESDEN postcode: 1109 website: www.hap-dresden.de; www.hap.eu contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (DRESDEN)	participant	139˙969.00
26	IKERLAN S. COOP IKERLAN S. COOP Organization address address: P JOSE MARIA ARIZMENDIARRIETA 2 city: MONDRAGON postcode: 20500 website: www.ikerlan.es contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	ES (MONDRAGON)	participant	139˙059.00
27	UNIVERSITAET GRAZ UNIVERSITAET GRAZ Organization address address: UNIVERSITATSPLATZ 3 city: GRAZ postcode: 8010 website: http://www.uni-graz.at contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	AT (GRAZ)	participant	131˙853.00
28	SPTS TECHNOLOGIES LIMITED SPTS TECHNOLOGIES LIMITED Organization address address: RINGLAND WAY city: NEWPORT postcode: NP18 2TA website: www.spts.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	UK (NEWPORT)	participant	113˙003.00
29	SLOVENSKA TECHNICKA UNIVERZITA V BRATISLAVE SLOVENSKA TECHNICKA UNIVERZITA V BRATISLAVE Organization address address: VAZOVOVA 5 city: BRATISLAVA postcode: 81243 website: www.stuba.sk contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	SK (BRATISLAVA)	participant	111˙718.00
30	CTR CARINTHIAN TECH RESEARCH AG CTR CARINTHIAN TECH RESEARCH AG Organization address address: HIGHTECH CAMPUS VILLACH EUROPASTRASSE 12 city: VILLACH SANKT MAGDALEN postcode: 9524 website: www.ctr.at contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	AT (VILLACH SANKT MAGDALEN)	participant	106˙968.00
31	QUANTEMOL LIMITED QUANTEMOL LIMITED Organization address address: LANCASTER GROVE 37 city: LONDON postcode: NW3 4HB website: www.quantemol.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	UK (LONDON)	participant	97˙957.00
32	UNIVERSITY OF BRISTOL UNIVERSITY OF BRISTOL Organization address address: BEACON HOUSE QUEENS ROAD city: BRISTOL postcode: BS8 1QU website: www.bristol.ac.uk contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	UK (BRISTOL)	participant	97˙685.00
33	MAX PLANCK INSTITUT FUR EISENFORSCHUNG GMBH MAX PLANCK INSTITUT FUR EISENFORSCHUNG GMBH Organization address address: MAX PLANCK STRASSE 1 city: DUSSELDORF postcode: 40237 website: http://www.mpie.de contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (DUSSELDORF)	participant	96˙410.00
34	BAUMANN GMBH BAUMANN GMBH Organization address address: Oskar-von-Miller-Str.7 city: Amberg postcode: 92224 website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (Amberg)	participant	88˙208.00
35	Pac Tech - Packaging Technologies GmbH Pac Tech - Packaging Technologies GmbH Organization address address: Am Schlangenhorst 7-9 city: Nauen postcode: 14641 website: www.pactech.de contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (Nauen)	participant	84˙816.00
36	CISC SEMICONDUCTOR GMBH CISC SEMICONDUCTOR GMBH Organization address address: LAKESIDE B07 city: KLAGENFURT postcode: 9020 website: www.cisc.at contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	AT (KLAGENFURT)	participant	66˙185.00
37	PLANSEE SE PLANSEE SE Organization address address: Metallwerk Planseestrasse 71 city: REUTTE postcode: 6600 website: www.plansee.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	AT (REUTTE)	participant	59˙306.00
38	NANO DESIGN SRO NANO DESIGN SRO Organization address address: DROTARSKACESTA 6385 19A city: BRATISLAVA postcode: 811 04 website: www.nanodesign.sk contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	SK (BRATISLAVA)	participant	56˙875.00
39	MEMSSTAR LIMITED MEMSSTAR LIMITED Organization address address: QUARTERMILE ONE 15 LAURISTON PLACE city: EDINBURGH postcode: EH3 9EP website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	UK (EDINBURGH)	participant	37˙187.00

Map

Project objective

The key objective of PowerBase “Enhanced substrates and GaN pilot lines enabling compact power applications” is to ensure the availability of Electronic Components and Systems (ECS) for key markets and for addressing societal challenges, aiming at keeping Europe at the forefront of the technology development, bridging the gap between research and exploitation, creating economic and employment growth in the European Union. The project PowerBase aims to contribute to the industrial ambition of value creation in Europe and fully supports this vision by addressing key topics of ECSEL multi annual strategic plan 2014. By positioning PowerBase as innovation action a clear focus on exploitation of the expected result is primary goal. To expand the limits in current power semiconductor technologies the project focuses on setting up a qualified wide band gap GaN technology Pilot line, on expanding the limits of today’s silicon based substrate materials for power semiconductors, improving manufacturing efficiency by innovative automation, setting up of a GaN compatible chip embedding pilot line and demonstrating innovation potential in leading compact power application domains. PowerBase is a project proposal with a vertical supply chain involved with contributions from partners in 7 European countries. This spans expertise from raw material research, process innovation, pilot line, assembly innovation and pilot line up to various application domains representing enhanced smart systems. The supporting partners consist of market leaders in their domain, having excellent technological background, which are fully committed to achieve the very challenging project goals. The project PowerBase aims to have significant impact on mart regions. High tech jobs in the area of semiconductor technologies and micro/nano electronics in general are expressed core competences of the regions Austria: Carinthia, Styria, Germany: Sachsen, Bavaria and many other countries/ regions involved.

Deliverables

List of deliverables.
8.2.5.2 Organization of a workshop/training event	Other	2019-05-20 13:14:24
D8.1.3.1 Press Release: Launching the PowerBase Project	Other	2019-05-20 13:14:24
D8.2.5.1 Preparation of e-learning â€œPower electronicsâ€ module;	Other	2019-05-20 13:14:24
D8.2.1.1 Initial Dissemination Plan and Set-up PowerBase Web-Site	Other	2019-05-20 13:14:24
8.2.1.2 Final Report on Dissemination Activities	Documents, reports	2019-05-20 13:14:24
D8.2.1.2 First Report on Dissemination Activities	Documents, reports	2019-05-20 13:14:24

Take a look to the deliverables list in detail: detailed list of PowerBase deliverables.

Publications

List of publications.
year	authors and title	journal	last update
2016	N. Ganagona, I. Kolevatov. H.M. Ayedh, A. Galeckas, L. Vines, E.V. Monakhov and B.G. Svensson Point defects and impurities in mon-crystalline silicon - some recent advances published pages: , ISSN: , DOI:	The 7th International Symposium on Advanced Science and Technology of Silicon Materials (2016)	2019-06-18
2018	Ander Avila, Xavier PerpiÃ±a, Xavier Jorda, Asier Garcia-Bediaga, Alejandro Rujas Thermal performance analysis of GaN-based high-power converters published pages: , ISSN: , DOI:	European Conference on Power Electronics and Applications	2019-06-18
2018	Ander Avila, Asier Garcia-Bediaga, Alberto Rodriguez, Luis Mir, Alejandro Rujas Analysis of Optimal Operation Conditions for GaN-basedPower Converters published pages: , ISSN: , DOI:	Energy Conversion Congress and Exposition	2019-06-18
2018	Ben Rackauskas, Michael J. Uren, Steve Stoffels, Ming Zhao, Stefaan Decoutere, Martin Kuball Determination of the Self-Compensation Ratio of Carbon in AlGaN for HEMTs published pages: 1838-1842, ISSN: 0018-9383, DOI: 10.1109/ted.2018.2813542	IEEE Transactions on Electron Devices 65/5	2019-06-18
2017	Ming Zhao, Karen Geens, Xiangdong Li, Marleen Van Hove, Vesa-Pekka Lempinen, Jaakko Sormunen, Robert Langer, Stefaan Decoutere MOCVD Growth and Characterization of 200 V E-mode p-GaN HEMTs on 200 mm GaN-on-SOI for Monolithic Integration published pages: , ISSN: , DOI:	ICNS-12	2019-06-18
2018	S. Stoffels, K. Geens, N. Posthuma, M. Zhao, H. Liang, X. Li, D. Wellekens, S. You, B. Bakeroot, M.Van Hove, S. Decoutere GaN Device architectures enabled by next generation substrates published pages: , ISSN: , DOI:	GaN Marathon 2.0	2019-06-18
2017	L. Lymperakis, J. Neugebauer, M. Himmerlich, S. Krischok, M. Rink, J. KrÃ¶ger, V. M. Polyakov Adsorption and desorption of hydrogen at nonpolar GaN ( 1 1 Â¯ 00 ) surfaces: Kinetics and impact on surface vibrational and electronic properties published pages: 1-11, ISSN: 2469-9950, DOI: 10.1103/PhysRevB.95.195314	Physical Review B 95/19	2019-06-18
2017	F.P. Pribahsnik, M. Nelhiebel, M. Mataln, M. Bernardoni, G. Prechtl, F. Altmann, D. Poppitz, A. Lindemann Exploring the thermal limit of GaN power devices under extreme overload conditions published pages: 304-308, ISSN: 0026-2714, DOI: 10.1016/j.microrel.2017.07.046	Microelectronics Reliability 76-77	2019-06-18
2018	S. You, N. E. Posthuma, N. Ronchi, S. Stoffels, B. Bakeroot, D. Wellekens, H. Liang, M. Zhao and S. Decoutere Dielectrics choice and processing for low dispersion enhancement mode p-GaN gate HEMTs on 200mm Si substrates published pages: , ISSN: , DOI:	Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe 2018	2019-06-18
2018	L. Stockmeier, C. Kranert, G. Raming, A. Miller, C. Reimann, P. Rudolph, J. Friedrich Edge facet dynamics during the growth of heavily doped n-type silicon by the Czochralski-method published pages: 57-65, ISSN: 0022-0248, DOI: 10.1016/j.jcrysgro.2018.03.028	Journal of Crystal Growth 491	2019-06-18
2018	X. JordÃ , X. PerpiÃ±Ã , M. Vellvehi, D. SÃ¡nchez, A. GarcÃa-Bediaga Thermal Characterization of SMD Packaged 650V GaN HEMTs Assembled in PCB Boards published pages: , ISSN: , DOI:	GaN Marathon 2.0	2019-06-18
2018	F.P. Pribahsnik GaN specific mechanical phenomena and their influence on reliability in power HEMT operation published pages: , ISSN: , DOI:	PhD thesis @ Faculty of electronics and information tecnhologies, Otto v Guericke UniversitÃ¤t Magdeburg	2019-06-18
2017	AleÅ¡ ChvÃ¡la, Juraj Marek, Patrik PrÃbytnÃ½, Alexander Å atka, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Daniel Donoval Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation published pages: 148-155, ISSN: 0026-2714, DOI: 10.1016/j.microrel.2017.08.012	Microelectronics Reliability 78	2019-06-18
2018	N.E. Posthuma, S. You, S. Stoffels, H. Liang, M. Zhao and S. Decoutere Gate architecture design for enhancement mode p-GaN gate HEMTs for 200 and 650V applications published pages: , ISSN: , DOI:	The 30th IEEE International Symposium on Power Semiconductor Devices and Ics (ISPSD)	2019-06-18
2018	S. Stoffels, K. Geens, X. Li, M. Zhao, M. Borga, E. Zanoni, G. Meneghesso, M. Meneghini, N. Posthuma, M. Van Hove and S. Decoutere Substrate optimization for high reliability GaN devices published pages: , ISSN: , DOI:	MRS2018 Symposium	2019-06-18
2018	X. JordÃ , X. PerpiÃ±Ã , M. Vellvehi, D. SÃ¡nchez, A. GarcÃa-Bediaga Analysis of natural convection cooling solutions for GaN HEMT transistors published pages: , ISSN: , DOI:	20th European Conference on Power Electronics and Applications	2019-06-18
2018	Meneghini M. et al. Challenges towards highly reliabile GaN power transistors published pages: , ISSN: , DOI:	GaN Marathon 2018	2019-06-18
2017	I. Rossetto, M. Meneghini, E. Canato, M. Barbato, S. Stoffels, N. Posthuma, S. Decoutere, A.N. Tallarico, G. Meneghesso, E. Zanoni Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level published pages: 298-303, ISSN: 0026-2714, DOI: 10.1016/j.microrel.2017.06.061	Microelectronics Reliability 76-77	2019-06-18
2017	L. Stockmeier, L. Lehmann, A. Miller, C. Reimann, J. Friedrich Dislocation formation in heavily As-doped Czochralski grown silicon published pages: 1600373, ISSN: 0232-1300, DOI: 10.1002/crat.201600373	Crystal Research and Technology 52/8	2019-06-18
2018	Xavier Jorda, Ander Avila, Asier Garcia-Bediaga, Xavier PerpiÃ±a, Miquel Vellvehi Analysis of natural convection cooling solutions for GaN HEMT transistors published pages: , ISSN: , DOI:	European Conference on Power Electronics and Applications	2019-06-18
2017	Matteo Borga, Matteo Meneghini, Isabella Rossetto, Steve Stoffels, Niels Posthuma, Marleen Van Hove, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs published pages: 3616-3621, ISSN: 0018-9383, DOI: 10.1109/TED.2017.2726440	IEEE Transactions on Electron Devices 64/9	2019-06-18
2018	H Amano, Y Baines, E Beam, Matteo Borga, T Bouchet, Paul R Chalker, M Charles, Kevin J Chen, Nadim Chowdhury, Rongming Chu, Carlo De Santi, Maria Merlyne De Souza, Stefaan Decoutere, L Di Cioccio, Bernd Eckardt, Takashi Egawa, P Fay, Joseph J Freedsman, L Guido, Oliver HÃ¤berlen, Geoff Haynes, Thomas Heckel, Dilini Hemakumara, Peter Houston, Jie Hu, Mengyuan Hua, Qingyun Huang, Alex Huang, Sheng Jiang, H Kawai, Dan Kinzer, Martin Kuball, Ashwani Kumar, Kean Boon Lee, Xu Li, Denis Marcon, Martin MÃ¤rz, R McCarthy, Gaudenzio Meneghesso, Matteo Meneghini, E Morvan, A Nakajima, E M S Narayanan, Stephen Oliver, TomÃ¡s Palacios, Daniel Piedra, M Plissonnier, R Reddy, Min Sun, Iain Thayne, A Torres, Nicola Trivellin, V Unni, Michael J Uren, Marleen Van Hove, David J Wallis, J Wang, J Xie, S Yagi, Shu Yang, C Youtsey, Ruiyang Yu, Enrico Zanoni, Stefan Zeltner, Yuhao Zhang The 2018 GaN power electronics roadmap published pages: 163001, ISSN: 0022-3727, DOI: 10.1088/1361-6463/aaaf9d	Journal of Physics D: Applied Physics 51/16	2019-06-18
2018	M.Lenzhofer, A. Frank Efficiency and Near-Field Emission Comparisons of a Si- and GaN Based Buck Converter Topology published pages: , ISSN: , DOI:	IEEE- PEMC 2018	2019-06-18
2017	Xiangdong Li, Marleen Van Hove, Ming Zhao, Karen Geens, Vesa-Pekka Lempinen, Jaakko Sormunen, Guido Groeseneken, Stefaan Decoutere 200 V Enhancement-mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI with Trench Isolation for Monolithic Integration published pages: 1-1, ISSN: 0741-3106, DOI: 10.1109/LED.2017.2703304	IEEE Electron Device Letters	2019-06-18
2016	Jie Hu, Steve Stoffels, Silvia Lenci, Brice De Jaeger, Nicolo Ronchi, Andrea Natale Tallarico, Dirk Wellekens, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, Stefaan Decoutere Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination published pages: 3451-3458, ISSN: 0018-9383, DOI: 10.1109/TED.2016.2587103	IEEE Transactions on Electron Devices 63/9	2019-06-18
2017	D. Poppitz, S. Brand, A. Graff, T. Detzel, O. HÃ¤berlen, G. Prechtl, F. Altmann Strain analysis and dicing defects of GaN on Si substrates published pages: , ISSN: , DOI:	41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe	2019-06-18
2016	A. Dzarasova QDB: A new database of plasma chemistries and reactions â€“ concept and exemplar verification published pages: , ISSN: , DOI:	IOP Plasma physics conference	2019-06-18
2016	Hofer V., Leitner J., Nowak T Determination of guard bands for quality characteristics using copula-based models for longitudinal data published pages: , ISSN: , DOI:	The Deutsche Arbeitsgemeinschaft Statistik (DAGStat) 2016	2019-06-18
2017	L. Lymperakis and J. Neugebauer Thermodynamics, kinetics, and electronic structure of H2 and F2 passivation of defect states in GaN: An ab-initio study published pages: , ISSN: , DOI:	41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe	2019-06-18
2017	J. Marek, A. Å atka, M. Jagelka, A. ChvÃ¡la, P. PrÃbytnÃ½, M. Donoval and D. Donoval Modern p-GaN power devices under UIS conditions published pages: , ISSN: , DOI:	41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe	2019-06-18
2017	Ales Chvala, Juraj Marek, Patrik Pribytny, Alexander Satka, Martin Donoval, Daniel Donoval Effective 3-D Device Electrothermal Simulation Analysis of Influence of Metallization Geometry on Multifinger Power HEMTs Properties published pages: 333-336, ISSN: 0018-9383, DOI: 10.1109/TED.2016.2629024	IEEE Transactions on Electron Devices 64/1	2019-06-18
2017	M. Borga, M. Meneghini, I. Rossetto, M. Silvestri, O. Haeberlen, T. Detzel, G. Meneghesso, E. Zanoni Buffer-induced vertical leakage and charge trapping in normally-off GaN-on-Si HEMTs published pages: , ISSN: , DOI:	41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe	2019-06-18
2017	Vera Hofer, Karl-Franzens-University, Graz, Austria; Thomas Nowak Guardbanding based on Device Drift Behavior published pages: , ISSN: , DOI:	Nineteenth Annual Automotive Electronics Reliability Workshop	2019-06-18
2017	F. P. Pribahsnik, M. Nelhiebel, M. Mataln, M. Bernardoni, G. Prechtl, F. Altmann, D. Poppitz, A. Lindemann High temperature failure mode in power GaN devices published pages: , ISSN: , DOI:	41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe	2019-06-18
2017	A. Barbato, M. Barbato, M. Meneghini, M. Silvestri, T. Detzel, O. Haeberlen, G. Meneghesso, E. Zanoni A Novel System to Measure the Dynamic On-Resistance of On-Wafer 600 V Normally-Off GaN HEMTs in Real Application Conditions published pages: , ISSN: , DOI:	41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe	2019-06-18
2016	AleÅ¡ ChvÃ¡la, Juraj Marek, Patrik PrÃbytnÃ½, Alexander Å atka and Daniel Donoval Model of power InAlN/GaN HEMT for 3-D Electrothermal Simulations published pages: , ISSN: , DOI:	International MOS-AK Workshop	2019-06-18
2017	Jonathan Tennyson, Sara Rahimi, Christian Hill, Lisa Tse, Anuradha Vibhakar, Dolica Akello-Egwel, Daniel B Brown, Anna Dzarasova, James R Hamilton, Dagmar Jaksch, Sebastian Mohr, Keir Wren-Little, Johannes Bruckmeier, Ankur Agarwal, Klaus Bartschat, Annemie Bogaerts, Jean-Paul Booth, Matthew J Goeckner, Khaled Hassouni, Yukikazu Itikawa, Bastiaan J Braams, E Krishnakumar, Annarita Laricchiuta, Nigel J Mason, Sumeet Pandey, Zoran Lj Petrovic, Yi-Kang Pu, Alok Ranjan, Shahid Rauf, Julian Schulze, Miles M Turner, Peter Ventzek, J Christopher Whitehead, Jung-Sik Yoon QDB: a new database of plasma chemistries and reactions published pages: 55014, ISSN: 1361-6595, DOI: 10.1088/1361-6595/aa6669	Plasma Sources Science and Technology 26/5	2019-06-18
2016	J. Marek, M. Jagelka, A. ChvÃ¡la, P. PrÃbytnÃ½, M.Donoval and D. Donoval UIS Capability of Modern GaN Power Devices published pages: , ISSN: , DOI:	3rd international conference on advances in electronic and photonic technologies	2019-06-18
2017	K. Geens, M. Van Hove, X. Li, M. Zhao, A. Å atka, A. Vincze and S. Decoutere CMOS Process-Compatible 200mm polycrystalline AlN Substrates for GaN Power Transistors published pages: , ISSN: , DOI:	41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe	2019-06-18
2017	M. Glavanovics, S. Ofner, R. Sleik, M. Nelhiebel, A. Madan, O. Haeberlen Application Related Reliability Test Concept for GaN HEMT Power Devices published pages: , ISSN: , DOI:	41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe	2019-06-18
2015	Sebastian Mohr, Anna Dzarasova, Dimitrios Tsamados, Vaibhav Deshpande, Mohamed Oulmane, Jonathan Tennyson From Plasma Reactor to Surface Level: Linking Plasma with Feature Profile Simulations published pages: , ISSN: , DOI:	American Vacuum Society Symopsium	2019-06-18
2016	Ming Zhao, Juraj Priesol, Alexander Satka, Lukasz Janicki, Michal Baranowski, Jan Misiewicz, Robert Kudrawiec, Yoga Nrusimha Saripalli MOCVD Growth and Characterizations of Unintentionally and Intentionally C doped GaN on 200 mm Si (111) published pages: , ISSN: , DOI:	18th International Conference on Metal Organic Vapor Phase Epitaxy	2019-06-18
2017	J. Priesol, A. Å atka, A. ChvÃ¡la, S. Stoffels, S. Decoutere Identification of critical regions in AlGaN/GaN-on-Si Schottky barrier diode using Electron beam induced current method published pages: , ISSN: , DOI:	Identification of critical regions in AlGaN/GaN-on-Si Schottky barrier diode using Electron beam induced current method	2019-06-18
2017	S. Stoffels, K. Geens, M. Zhao, H. Liang, M. Van Hove and S. Decoutere Next generation 200mm substrates for GaN power devices published pages: , ISSN: , DOI:	41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe	2019-06-18
2017	S. Brand, B. Boettge, J. Zijl, S. Kersjes, T. Behrens, Evaluation of the capabilities of scanning acoustic microscopy towards assessing the porosity of Ag-sinter layers for GaN based power electronics published pages: , ISSN: , DOI:	41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe	2019-06-18
2016	S. Rahimi, C. Hill, L. Tse, A. Vibhakar, S. Mohr, J.R. Hamilton, A. Dzarasova, D.B. Brown, J. Tennyson Constructing self-consistent validated plasma chemistry published pages: , ISSN: , DOI:	The 38th International Symposium on Dry Process (DPS2016)	2019-06-18
2016	Ming Zhao, Steve Stoffels, Marleen Van Hove, Prem Kumar Kandaswamy, Hu Liang, Yoga Nrusimha Saripalli, Stefaan Decoutere Study on the Dispersion Control of AlGaN/GaN Buffers Grown by MOCVD on 200 mm Si (111) published pages: , ISSN: , DOI:	18th International Conference on Metal Organic Vapor Phase Epitaxy	2019-06-18
2017	Karen Geens First time demonstration of fully isolated GaN power devices using SOI technology published pages: , ISSN: , DOI:	imec magazine	2019-06-18
2017	M. Ruzzarin, A. Barbato, M. Meneghini, I. Rossetto, M. Silvestri, O. Haeberlen, T. Detzel, G. Meneghesso, E. Zanoni Study of trapping in GaN-based power HEMTs based on High-Voltage Double-Pulsed Backgating Measurement System published pages: , ISSN: , DOI:	41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe	2019-06-18
2015	Sebastian Mohr, Anna Dzarasova, Dimitrios Tsamados, Vaibhav Deshpande, Mohamed Oulmane, Jonathan Tennyson Linking reactor-scale plasma modelling with feature-scale profile published pages: , ISSN: , DOI:	Dry Process Symposium	2019-06-18
2017	X. Li; M. Van Hove; M. Zhao; K. Geens; V. P. Lempinen; J. Sormunen; G. Groeseneken; S. Decoutere 200 V Enhancement-mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI with Trench Isolation for Monolithic Integration published pages: , ISSN: , DOI:	41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe	2019-06-18
2016	Matteo Meneghini, Isabella Rossetto, Vanessa Rizzato, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Tian-Li Wu, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni Gate Stability of GaN-Based HEMTs with P-Type Gate published pages: 14, ISSN: 2079-9292, DOI: 10.3390/electronics5020014	Electronics 5/2	2019-06-18
2016	L. Stockmeier, L. Lehmann, C. Reimann, J. Friedrich Possible reasons for dislocation formation in heavily doped Czochralski silicon published pages: , ISSN: , DOI:	1st German Czechoslovak Conference on Crystal Growth	2019-06-18
2016	Vera Hofer, Johannes Leitner, Horst Lewitschnig, Thomas Nowak Guardbanding Techniques for the Semiconductor Industry: A Comparative Study published pages: , ISSN: , DOI:	The Joint Statistical Meeting â€“ JSM2016	2019-06-18
2016	J. Friedrich, L. Stockmeier, L. Lehmann, C. Reimann Possible reasons for dislocation formation in heavily doped Czochralski silicon published pages: , ISSN: , DOI:	10th International Conference of Polish Society for Crystal Growth - ICPSCG10	2019-06-18
2016	Sara Rahimi, James Hamilton, Christian Hill, Jonathan Tennyson QDB: Validated Plasma Chemistries Database published pages: , ISSN: , DOI:	69TH ANNUAL GASEOUS ELECTRONICS CONFERENCE â€“ GEC	2019-06-18
2016	Jonathan Tennyson, Christian Hill, Sara Rahimi QDB: A sustainable database for plasma chemistriesâ€ in International Workshop on Plasmas for Energy and Environmental Applications published pages: , ISSN: , DOI:	International Workshop on Plasmas for Energy and Environmental Applications â€“ IWPEEA2016	2019-06-18
2016	Ben Rackauskas, , Michael J Uren, Steve Stoffels and Martin Kuball, Processes behind Suppressed Current Collapse Buffer Architectures published pages: , ISSN: , DOI:	The International Workshop on Nitride Semiconductors 2016	2019-06-18
2016	L. Stockmeier, L. Lehmann, C. Reimann, J. Friedrich Possible reasons for dislocation formation in heavily doped Czochralski silicon published pages: , ISSN: , DOI:	The International Conference on Crystal Growth and Epitaxy -ICCGE-18	2019-06-18

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The information about "POWERBASE" are provided by the European Opendata Portal: CORDIS opendata.