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OSIRIS SIGNED

Optimal SIC substR ates for Integrated Microwave and Power CircuitS

Total Cost €

EC-Contrib. €

Partnership

Views

Outcomes and
results

OSIRIS project word cloud

Explore the words cloud of the OSIRIS project. It provides you a very rough idea of what is the project "OSIRIS" about.

circuits substrate electron nitride epi transport innovation itself semiconducting elaborate carrier microwave rates inches lot electronics complete ria circuit heat thinned thermal wafer decrease performance essentially microstrip lower intends drift 12c temperature dissipating action spreading dissipation atoms substantially silicon power market scattering gan effectiveness micro wave proposes waveguided close penetration transistors millimetre materials hemt grown realise isotopic substrates material led sic thanks insulating carbon osiris components create sources industries tested layer innovative doped improvement diodes industry semi schottky 30 mobility really single conductivity reinforcing thickness area 28si shift size grow device 100 gallium dissipative performances 100mm

Project "OSIRIS" data sheet

The following table provides information about the project.

Coordinator	III-V LAB Organization address address: 1 AVENUE AUGUSTIN FRESNEL CAMPUS POLYTECHNIQUE city: PALAISEAU CEDEX postcode: 91767 website: www.3-5lab.fr contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.
Coordinator Country	France [FR]
Project website	http://osiris-ecselju.eu/
Total cost	4˙487˙117 €
EC max contribution	1˙819˙212 € (41%)
Programme	1. H2020-EU.2.1.1.7. (ECSEL)
Code Call	ECSEL-2014-1
Funding Scheme	ECSEL-RIA
Starting year	2015
Duration (year-month-day)	from 2015-05-01 to 2018-11-30

Partnership

Take a look of project's partnership.

#	participants	country	role	EC contrib. [€]
1	III-V LAB III-V LAB Organization address address: 1 AVENUE AUGUSTIN FRESNEL CAMPUS POLYTECHNIQUE city: PALAISEAU CEDEX postcode: 91767 website: www.3-5lab.fr contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	FR (PALAISEAU CEDEX)	coordinator	637˙884.00
2	LINKOPINGS UNIVERSITET LINKOPINGS UNIVERSITET Organization address address: CAMPUS VALLA city: LINKOPING postcode: 581 83 website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	SE (LINKOPING)	participant	316˙161.00
3	STMICROELECTRONICS SILICON CARBIDE AB STMICROELECTRONICS SILICON CARBIDE AB Organization address address: PO BOX 734 city: NORKOPING postcode: 601 16 website: www.norstel.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	SE (NORKOPING)	participant	169˙919.00
4	CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS Organization address address: RUE MICHEL ANGE 3 city: PARIS postcode: 75794 website: www.cnrs.fr contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	FR (PARIS)	participant	164˙396.00
5	ISOSILICON AS ISOSILICON AS Organization address address: ROGNELIA 30 city: KRISTIANSAND S postcode: 4622 website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	NO (KRISTIANSAND S)	participant	153˙500.00
6	ASCATRON AB ASCATRON AB Organization address address: ISAFJORDSGATAN 22 ELECTRUM 207 city: KISTA postcode: 164 40 website: www.ascatron.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	SE (KISTA)	participant	147˙202.00
7	SLOVENSKA TECHNICKA UNIVERZITA V BRATISLAVE SLOVENSKA TECHNICKA UNIVERZITA V BRATISLAVE Organization address address: VAZOVOVA 5 city: BRATISLAVA postcode: 81243 website: www.stuba.sk contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	SK (BRATISLAVA)	participant	110˙517.00
8	INTRASPEC TECHNOLOGIES INTRASPEC TECHNOLOGIES Organization address address: 3 Avenue Didier Daurat city: Toulouse postcode: 31400 website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	FR (Toulouse)	participant	73˙042.00
9	UNITED MONOLITHIC SEMICONDUCTORS SAS UNITED MONOLITHIC SEMICONDUCTORS SAS Organization address address: AV DU QUEBEC 10 BATIMENT CHARMILLE PARC SILIC DE VILLEBON COURTABOEUF city: VILLEBON SUR YVETTE postcode: 91140 website: www.ums-gaas.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	FR (VILLEBON SUR YVETTE)	participant	46˙591.00

Map

Project objective

OSIRIS project, a Research and Innovation Action (RIA), aims at improving substantially the cost effectiveness and performance of gallium nitride (GaN) based millimetre wave components. The project proposes to elaborate innovative SiC material using isotopic sources. This material will offer thermal conductivity improvement of 30% which is important for devices dissipating a lot of power, in particular in SiC power electronics and in microwave device using GaN high electron mobility transistors (HEMT) grown on SiC semi-insulating substrates. OSIRIS project will allow reinforcing GaN technology penetration into the market by cost effectiveness of the SiC substrates and circuit performances improvement thanks to better heat spreading close to the dissipative area. For microwave GaN/SiC HEMT this isotopic approach could create a complete shift in the currently used substrate / GaN epi-wafer technology; it intends to grow high thermal conductivity (30%) semi-insulating SiC on top of low cost semiconducting SiC substrates (widely used by the power electronics and LED industries). Reduced layer thickness is necessary as only the top 50 to 100µm SiC wafer is really useful as the substrate itself is currently thinned to realise microstrip waveguided microwave circuits. For power electronics, this isotopic innovation will be essentially focused on thermal improvement, i.e. better electron mobility at a given power dissipation as mobility and drift mobility decrease with temperature and also better carrier transport thanks to lower scattering rates. Schottky and p-i-n diodes will be tested using this material, which however will have to be doped while microwave devices need semi-insulating materials. The improved thermal SiC properties will be obtained by using single isotopic atoms for silicon and carbon, namely 28Si and 12C. The SiC wafer size will be targeted to 100mm (4-inches) which is today widely used on industry.

Deliverables

List of deliverables.
Report thermal conductivity of substrates and epiwafers	Documents, reports	2019-10-08 10:16:33
Workshop on devices and applications	Websites, patent fillings, videos etc.	2019-10-08 10:16:32
Project Video	Websites, patent fillings, videos etc.	2019-10-08 10:16:32
Newsletter 2	Websites, patent fillings, videos etc.	2019-10-08 10:16:32
Workshop on material research	Websites, patent fillings, videos etc.	2019-10-08 10:16:32
Project website	Websites, patent fillings, videos etc.	2019-10-08 10:16:32
Newsletter 1	Websites, patent fillings, videos etc.	2019-10-08 10:16:32
Communication kit	Websites, patent fillings, videos etc.	2019-10-08 10:16:32

Take a look to the deliverables list in detail: detailed list of OSIRIS deliverables.

Publications

List of publications.
year	authors and title	journal	last update
2017	Ranim Mohamad, Antoine BÃ©rÃ©, Jun Chen, Pierre Ruterana Investigation of strain effects on phase diagrams in the ternary nitride alloys (InAlN, AlGaN, InGaN) published pages: 1600752, ISSN: 1862-6300, DOI: 10.1002/pssa.201600752	physica status solidi (a) 214/9	2019-10-08
2018	Ranim Mohamad Relaxation de la contrainte dans les hÃ©tÃ©rostructures Al(Ga)InN/GaN pour applications Ã©lectroniques: modÃ©lisation des propriÃ©tÃ©s physiques et rÃ´le de l\'indium dans la dÃ©gradation des couches Ã©pitaxiales published pages: , ISSN: , DOI:		2019-10-08
2016	G. Bascoul, F. Infante Results on specific backside opening process dedicated to engineering package for SiC component published pages: , ISSN: , DOI:	Association d\'analyse de dÃ©faillance FranÃ§aise (ANADEF) June 7-10 2016 Seignosse-Hosseg	2019-10-08
2016	A. Minj, D. Skuridina, D. Cavalcoli, A. Cros, P. Vogt, M. Kneissl, H. Ben Ammar and P. Ruterana Surface properties of AlInN/GaN heterostructures published pages: , ISSN: , DOI:	E-MRS Spring meeting, 2-6 May 2016 Li	2019-10-08
2016	A. ChvÃ¡la, J. Marek, P. PrÃbytnÃ½, J. KovÃ¡Ä, S. Delage, J.-C. Jacquet and D. Donoval Thermal Management of multifinger Power HEMTs Supported by 3-D Simulation published pages: , ISSN: , DOI:	Advances in Electrical and Electronic Engineering Proceedings of the 4th internat	2019-10-08
2015	J. KovÃ¡c, jr, R. SzobolovskÃ½, A. KÃ³sa, L. StuchlÃkovÃ¡ and J. KovÃ¡c Transfer of Knowledge from Scientific Research Projects towards Middle School Scholars published pages: , ISSN: , DOI:	ICETA	2019-10-08
2016	AleÅ¡ ChvÃ¡la, Juraj Marek, ArpÃ¡d KÃ³sa, Patrik PrÃbytnÃ½, Ä½ubica StuchlÃkovÃ¡ and Daniel Donoval 2/3-D Device Simulations as an Effective Tool in Microelectronics Education published pages: , ISSN: , DOI:	Proceeding EWME 11th European Workshop on Micro	2019-10-08

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The information about "OSIRIS" are provided by the European Opendata Portal: CORDIS opendata.