TOPOMAT

Topological insulators: computational exploration of emerging electronic materials

Coordinatore	ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE    more Spiacenti, non ci sono informazioni su questo coordinatore. Contattare Fabio per maggiori infomrazioni, grazie.
Nazionalità Coordinatore	Switzerland [CH]
Totale costo	1˙643˙997 €
EC contributo	1˙643˙997 €
Programma	FP7-IDEAS-ERC Specific programme: "Ideas" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013)
Code Call	ERC-2012-StG_20111012
Funding Scheme	ERC-SG
Anno di inizio	2012
Periodo (anno-mese-giorno)	2012-09-01   -   2017-08-31

 Partecipanti

#	participant	country	role	EC contrib. [€]
1	ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE  Organization address address: BATIMENT CE 3316 STATION 1 city: LAUSANNE postcode: 1015 contact info Titolo: Ms. Nome: Caroline Cognome: Vandevyver Email: send email Telefono: +41 21 693 4977 Fax: +41 21 693 55 85	CH (LAUSANNE)	hostInstitution	1˙643˙997.60
2	ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE  Organization address address: BATIMENT CE 3316 STATION 1 city: LAUSANNE postcode: 1015 contact info Titolo: Prof. Nome: Oleg Cognome: Yazyev Email: send email Telefono: +41 21 6935485 Fax: +41 21 6935419	CH (LAUSANNE)	hostInstitution	1˙643˙997.60

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 Obiettivo del progetto (Objective)

'Topological insulators are the recently discovered class of materials that have a bulk electronic band gap, but also exhibit conducting surface states as a result of non-trivial band structure topology induced by strong spin-orbit interactions. These peculiar surface states are characterized by a number of novel properties such as graphene-like band dispersion and helical spin textures with no spin degeneracy which makes them immune to scattering. Due to these extraordinary properties, topological insulators are expected to find numerous technological applications, in particular in electronics and its next-day extensions - spintronics and quantum information processing. The project aims at exploring these novel electronic materials in silico; that is, by performing computer simulations using numerical methods of various levels of complexity. The global objective of the proposed research plan is to provide the theoretical support required to build a link between the fundamental physical properties of topological insulators and their prospective technological application by investigating materials science, chemistry and device-related aspects of these materials. In particular, the following three research directions will be explored: (i) understanding the structure-property relations and rational design of new materials with topologically non-trivial electronic structures, (ii) modeling realistic 'second generation' topological insulators (bismuth chalcogenides Bi2Se3, Bi2Te3, and related materials), and (iii) investigating magnetic and transport properties of topological insulators and their interfaces related to the device applications. The proposed interdisciplinary program intends to make a strong impact in basic research and future technologies, and will eventually promote the rapidly expanding field of topological insulators in European science.'