IFMGEDMS

Investigation of Ferromagnetism in Ge-Based Diluted Magnetic Semiconductors

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 Obiettivo del progetto (Objective)

'The idea of using the electron spin and charge degree of freedom in semiconductors may lead to create smaller, faster, less power consuming and more versatile devices than currently available chips and circuit elements. Despite the well-established modeling of spin based semiconductor devices, these devices have not been realized due to challenges in injecting and detecting spin of electron in semiconductors. The focus of this research is to study Ge based diluted magnetic semiconductors (DMS) which are good candidates for spin injection into semiconductors and play a key role in semiconductor spintronics due to their room temperature ferromagnetic ordering. Overall goal of this project is to better understand the fundamentals of ferromagnetism in these materials. In this manner, high quality DMS will be grown on technologically significant Si substrates by molecular beam epitaxy with atomic-scale precision. The evolution of the structural and chemical properties will be explored at different stages of the growth by various state-of-the-art insitu microscopy and spectroscopy techniques. The spin resolved electronic structure of the grown films, and their surfaces and interfaces will be investigated with spin and angle resolved photoelectron spectroscopy using synchrotron radiation. Ferromagnetism and its correlations with electronic properties will be investigated through magnetization studies at elevated temperatures and high and low magnetic fields using magneto optical Kerr effect and vibrating sample measurements. An understanding of spin physics arising from this research will lead to the potential development of new spintronic devices such as ultra-sensitive magnetic field sensors, quantum-based logic, and memory and integrated chips for high speed computation. This research project will motivate and encourage graduate students realize a firmer understanding of magnetism, semiconductor physics, and spin-electronic devices.'

Introduzione (Teaser)

EU-funded scientists are doping semiconductors with certain amounts of magnetic impurities such as manganese (Mn). Magnetic materials are enabling a new form of storage and processing capabilities, paving the way for spin-based computing.

Descrizione progetto (Article)

Encoding information with the spin state of electrons in addition to their charge may herald a new era of smaller, faster and less power-consuming devices. Despite the well-established modelling of spin-based semiconductor devices, they have not been hitherto realised because of challenges associated with spin injection and detection.

Against this backdrop, the EU-funded project 'Investigation of ferromagnetism in Ge-based diluted magnetic semiconductors' (IFMGEDMS) is studying dilute magnetic semiconductors (DMSs) based on germanium. DMS materials have been a major focus of magnetic semiconductor research as they invariably exhibit ferromagnetic properties at room temperatures, thus allowing spin injection in semiconductors.

Scientists have synthesised high-quality thin films of Mn-doped germanium. These DMSs have been grown on suitable silicon substrates by molecular beam epitaxy with atomic-scale precision. A number of different microscopy and spectroscopy techniques have enabled their detailed structural and magnetic characterisation. As such, scientists found the optimal conditions for incorporating the highest concentrations of diluted Mn, determining the Mn bonding sites and investigating the origin of ferromagnetism.

The research performed in IFMGEDMS is expected to facilitate the development of new spintronics devices such as ultra-sensitive magnetic field sensors, quantum logic and memory integrated chips.